Présentation

Phynano groups together physicists whose interests are mainly focused on new physical properties of the condensed matter at very small scale, both from the fundamental point of view, and for the potential applications. The aim of the research activity of the team is twofold:

1) exploring new phenomena in mesoscopic physics, nano-electronics, nanomagnetism and spintronics. Our domain of experimental competence is mainly focused in low temperature – high magnetic field magneto-transport and low temperature, high vacuum STM local spectroscopy.

2) performing technological research in order to improve and/or develop new tools for the high resolution nanofabrication.

	Croissance épitaxiale de gaz bidimensionnel d'électrons : hétérostructures III-V et graphène (Action 2DEG)
	Faisceaux d’ions focalisés ultimes (Action FIBultime)
	Structure électronique à l'échelle atomique sondée par STM basse température (Action LT-STM)
	Nanomagnétisme et spintronique mésoscopique (Action MesoSpin)
	Nano et Micro cryoélectronique (Action NanoFET)
	Transport Quantique (Action TQ)

Faits Marquants

• Energy relaxation in the integer quantum Hall regime (2010-09-01)
  Thème(s) : Nanostructures, gaz d'électron et électronique de spin
  
  
• Mise en évidence d’une transition de surface dans le composé NbSe3 (2010-06-01)
  Thème(s) : Nanostructures, gaz d'électron et électronique de spin
  
  

Membres

Animateur

Gennser Ulf

(+33) 1 69 63 61 31

Permanents

Anthore Anne	(+33) 1 69 63 63 16
Bourhis Eric	(+33) 1 69 63 60 88
Cavanna Antonella	(+33) 1 69 63 60 61
David Christophe	(+33) 1 69 63 61 82
Etienne Bernard	(+33) 1 69 63 61 98
Faini Giancarlo	(+33) 1 69 63 61 26
Gierak Jacques	(+33) 1 69 63 60 75
Girard Jean-Christophe	(+33) 1 69 63 61 84
Giraud Romain	(+33) 1 69 63 61 39
Jin Yong	(+33) 1 69 63 61 32
Mailly Dominique	(+33) 1 69 63 61 27
Ouerghi Abdelkarim	(+33) 1 69 63 61 11
Pierre Frédéric	(+33) 1 69 63 61 03
Rodary Guillemin	(+33) 1 69 63 61 21
Ulysse Christian	(+33) 1 69 63 60 90
Vouille Carole	(+33) 1 69 63 60 07
Wang Zhao-Zhong	(+33) 1 69 63 61 85

Stagiaires, doctorants, post-docs, invités

Liang Yingxin	(+33) 1 69 63 61 24
Dong Quan	(+33) 1 69 63 60 30
Mathieu Claire	(+33) 1 69 63 61 08
Fain Bruno	(+33) 1 69 63 61 76
Parmentier François	(+33) 1 69 63 60 03
Pallecchi Emiliano	(+33) 1 69 63 61 18
Kazazis Dimitris	(+33) 1 69 63 61 16
Gatilova Lina	(+33) 1 69 63 60 57
Ridene Mohamed	(+33) 1 69 63 61 08
Lucot Damien	(+33) 1 69 63 60 64
Jézouin Sébastien	(+33) 1 69 63 61 05
Velez Emilio	(+33) 1 69 63 60 86

Brevets

• Hétérostructure semi-conductrice et transistor de type HEMT, en particulier pour applications cryogéniques à bas bruit et à basse fréquence, Y. Jin, U. Gennser, A. Cavanna, FR 1004012, (2010-10-11)
  

Publications récentes

• Control of the degree of surface graphitization on 3C-SiC(100)/Si(100) , N. Gogneau, A. Balan, M. Ridene, A. Shukla, A. Ouerghi, Surface Science 606, 217 (2012)
• Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain , A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, M. Portail, Phys. Stat. Sol. (c) 9, N°2, 175 (2012)
• Conductance fluctuations in metallic nanogaps made by electromigration , P. Petit, A. Anthore, M. L. Della Rocca, P. Lafarge, J. Appl. Phys. 109, 014307 (2011)
• Atomic structure of tip apex for spin-polarized scanning tunneling microscopy , G. Rodary, J.-C. Girard, L. Largeau, C. David, O. Mauguin, Z.-Z. Wang, Appl. Phys. Lett. 98, 082505 (2011)
• Nanostructuring graphene on SiC by focused ion beam: Effect of the ion fluence , B. Prevel, J.-M. Benoît, L. Bardotti, P. Mélinon, A. Ouerghi, D. Lucot, E. Bourhis, J. Gierak, Appl. Phys. Lett. 99, 083116 (2011)
• Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells , I. Dhifallah, M. Daoudi, A. Bardaoui, B. Eljani, A. Ouerghi, R. Chtourou, J. Lumin. 131, 1007 (2011)
• Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:δSi high electron mobility transistors structures , I. Dhifallah, M. Daoudi, A. Ouerghi, M. Oueslati, R. Chtourou, Superlatt. Microstruct. 49, 519 (2011)
• Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers , A. Ouerghi, M. Ridene, A. Balan, R. Belkhou, A. Barbier, N. Gogneau, M. Portail, A. Michon, S. Latil, P. Jegou, A. Shukla, Phys. Rev. B 83, 205429 (2011)
• Dynamics of Colloids in Single Solid-State Nanopores , L. Bacri, A. G. Oukhaled, B. Schiedt, G. Patriarche, E. Bourhis, J. Gierak, J. Pelta, L. Auvray, J. Phys. Chem. B 115, 2890 (2011)
• Spin-Dependent Quantum Interference Within a Single Magnetic Nanostructure , H. Oka, P. A. Ignatiev, S. Wedekind, G. Rodary, L. Niebergall, V. S. Stepanyuk, D. Sander, J. Kirschner, Science 327, 843 (2010)
• Cross-sectional magnetic force microscopy of MnAs/GaAs(001) , B. Rache Salles, M. Marangolo, C. David, J.-C. Girard, Appl. Phys. Lett. 96, 052510 (2010)
• Atomic structure of the (3 × 2) Si–GaAs (0 0 1) reconstructed surface: A clue to delta doping mechanism derived from in situ grazing incidence X-ray diffraction data , M. Sauvage-Simkin, R. Pinchaux, A. Coati, A. Ouerghi, Y. Garreau, B. Etienne, Surface Science 604, 415 (2010)
• Epitaxial graphene on cubic SiC(111)/Si(111) substrate , A. Ouerghi, A. Kahouli, D. Lucot, M. Portail, L. Travers, J. Gierak, J. Peneluas, P. Jegou, A. Shukla, T. Chassagne, M. Zielinski, Appl. Phys. Lett. 96, 191910 (2010)
• Development of ion sources from ionic liquids for microfabrication , C. Perez-Martinez, S. Guilet, N. Gogneau, P. Jegou, J. Gierak, P. Lozano, J. Vac. Sci. Technol. B 28, L25 (2010)
• Energy Relaxation in the Integer Quantum Hall Regime , H. Le Sueur, C. Altimiras, U. Gennser, A. Cavanna, D. Mailly, F. Pierre, Phys. Rev. Lett. 105, 056803 (2010)
• Non-equilibrium edge-channel spectroscopy in the integer quantum Hall regime , C. Altimiras, H. Le Sueur, U. Gennser, A. Cavanna, D. Mailly, F. Pierre, Nat. Phys. 6, 34 (2010)
• Intersubband electroluminescent devices operating in the strong-coupling regime , P. Jouy, A. Vasanelli, Y. Todorov, L. Sapienza, R. Colombelli, U. Gennser, C. Sirtori, Phys. Rev. B 82, 045322 (2010)
• Plasmon scattering approach to energy exchange and high frequency noise in n = 2 quantum Hall edge channels , P. Degiovanni, Ch. Grenier, G. Fève, C. Altimiras, H. Le Sueur, F. Pierre, Phys. Rev. B 81, 121302 (2010)
• Surface Charge density Wave phase Transition in NbSe3 , C. Brun, Z.-Z. Wang, P. Monceau, S. Brazovskii, Phys. Rev. Lett. 104, 256403 (2010)
• Quantum coherence at low temperatures in mesoscopic systems: Effect of disorder , Y. Niimi, Y. Baines, T. Capron, D. Mailly, L. Saminadayar, C. Baeuerle, Phys. Rev. B 81, 245306 (2010)
• Fluxoid quantization in the critical current of a niobium superconducting loop far below the critical temperature , S. Michotte, D. Lucot, D. Mailly, Phys. Rev. B 81, 100503 (2010)
• Growth and density control of nanometric nickel–iron cyanide-bridged objects on functionalized Si(100) surface , S. Tricard, B. Fleury, F. Volatron, C. Costa-Coquelard, S. Mazerat, V. Huc, C. David, F. Brisset, F. Miserque, P. Jegou, S. Palacin, T. Mallah, Chem. Commun. 24, 4327 (2010)
• Current-induced vortex dynamics and pinning potentials probed by homodyne detection , J.-S. Kim, O. Boulle, S. Verstoep, L. Heyne, J. Rhensius, M. Klaui, L. J. Heyderman, F. Kronast, R. Mattheis, C. Ulysse, G. Faini, Phys. Rev. B 82, 104427 (2010)
• Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions , M. S. Martin-Gonzalez, F. Briones, J. M. Garcia-Martin, J. Montserrat, L. Vila, G. Faini, A.M. Testa, D. Fiorani, H. Rohrmann, J. Magn. Mat. 322, 2762 (2010)
• Direct observation of electronic inhomogeneities induced by point defect disorder in manganite films , M. Sirena, A. Zimmers, N. Haberkorn, E. Kaul, L. B. Steren, J. Lesueur, T. Wolf, Y. Le Gall, J. J. Grob, G. Faini, J. Appl. Phys. 107, 113903 (2010)
• Size effects on the phase coexistence in MnAs/GaAs(001) ribbons , M. Tortarolo, M. Sirena, J. Milano, L. B. Steren, F. Vidal, B. Rache Salles, V. H. Etgens, M. Eddrief, G. Faini, L. I. Pietrasanta, Phys. Rev. B 81, 224406 (2010)
• Current-induced domain wall motion in Co/Pt nanowires: Separating spin torque and Oersted-field effects , J. Heinen, O. Boulle, V. Rousseau, G. Malinowski, M. Klaui, H. J. M. Swagten, B. Koopmans, C. Ulysse, G. Faini, Appl. Phys. Lett. 96, 202510 (2010)
• Influence of ion implantation on the magnetic and transport properties of manganite films , M. Sirena, A. Zimmers, N. Haberkorn, E. Kaul, L. B. Steren, J. Lesueur, T. Wolf, Y. Le Gall, J. J. Grob, G. Faini, Phys. Rev. B 81, 134439 (2010)
• Electronic structure of cleaved InAsP/InP(001) quantum dots measured by scanning tunneling spectroscopy , B. Fain, J.-C. Girard, D. Elvira, C. David, G. Beaudoin, A. Beveratos, I. Robert-Philip, I. Sagnes, Z.-Z. Wang, Appl. Phys. Lett. 97, 171903 (2010)
• Tuning Energy Relaxation along Quantum Hall Channels , C. Altimiras, H. Le Sueur, U. Gennser, A. Cavanna, D. Mailly, F. Pierre, Phys. Rev. Lett. 105, 226804 (2010)
• Schottky diode-based terahertz frequency multipliers and mixers , A. Maestrini, B. Thomas, H. Wang, C. Jung, J. Treuttel, Y. Jin, G. Chattopadhyay, I. Mehdi, G. Beaudin, C.R. Phys. 11, 480 (2010)
• Current correlations of an on-demand single-electron emitter , A. Mahé, F. D. Parmentier, E. Bocquillon, J.-M. Berroir, C. Glattli, T. Kontos, B. Plaçais, G. Fève, A. Cavanna, Y. Jin, Phys. Rev. B 82, 201309(R) (2010)
• Evidence of a fully ballistic one-dimensional field-effect transistor: Experiment and simulation , E. Gremion, D. Niepce, A. Cavanna, U. Gennser, Y. Jin, Appl. Phys. Lett. 97, 233505 (2010)
• Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition , A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, M. Portail, Appl. Phys. Lett. 97, 171909 (2010)
• Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111) , A. Ouerghi, R. Belkhou, M. Marangolo, M. G. Silly, S. El Moussaoui, M. Eddrief, L. Largeau, M. Portail, F. Sirotti, Appl. Phys. Lett. 97, 161905 (2010)
• Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties , A. Ouerghi, M. Marangolo, R. Belkhou, S. El Moussaoui, M. G. Silly, M. Eddrief, L. Largeau, M. Portail, B. Fain, F. Sirotti, Phys. Rev. B 82, 125445 (2010)