Présentation

Objectives

• Fabricate nanowires of III-V materials
• Analyze the morphological, structural, chemical, optical and transport properties of NWs
• Study and understand the basic mechanisms of nanowire formation
• Model nanowire growth quantitatively and predictively
• Fabricate controlled and defect-free heterostructures in nanowires for various applications
• Extend the current understanding of nucleation in open systems of nanometric dimensions

The interest for semiconductor nanowires (NWs) extends rapidly. This new class of nano-objects is likely to play an important role in future electronic and optoelectronic devices. NWs are also excellent vehicles for exploring the properties of one-dimensional (1D) systems. In this field, our studies have several interrelated facets. First, we aim at understanding, quantifying and modelling the basic mechanisms of NW growth, in their specific thermodynamical, kinetic and statistical aspects. We make use of this information to produce NWs with controlled geometry, structure and composition (including axial and radial heterostructures, and doping) for basic physical studies as well as for potential applications. Our investigations rely on detailed analyses of the samples, in particular by transmission electron microscopy (TEM). Specifically, we fabricate NWs by molecular beam epitaxy (MBE) in the (Al,Ga)As and In(P,As) systems using Au as a catalyst, and catalyst-free (Al,Ga)N NWs.

Highlights

• Origin of the wurtzite phase in nanowires of III-V zinc blende semiconductors
• Crystalline phase transition induced by epitaxial burying of GaAs nanowires
• Calculation of the critical dimensions for the plastic relaxation of axial heterostructures in nanowires
• Nucleation antibunching in VLS growth
• Quantum dots in nanowires for single photon sources

Figure 1 : Wurtzite phase of a GaAs nanowire oberved by TEM
Figure 3 : GaAs nanowires grown by MBE from an organized array of Au particles defined by electron-beam lithography

Collaborations

• V. Dubrovskii, G. E. Cirlin, Saint Petersburg Academic University (Russia), Internat. Assoc. Lab. ILNACS
• V. Zwiller, N. Akopian, Kavli Institute of Nanoscience, TU Delft (The Netherlands), PICS submitted
• M. Tchernycheva, IEF, Orsay (France)
• RCIQE, U. of Hokkaido (Japan)
• J.-L. Maurice, G. Rizza, LPICM, Palaiseau

Faits Marquants

• Nucléations anticorrélées en croissance VLS de nanofils (2010-04-01)
  Thème(s) : Physique et élaboration des hétérostructures
  
  

Membres

Contacts

Harmand Jean-Christophe	(+33) 1 69 63 60 81
Glas Frank	(+33) 1 69 63 60 79

Et aussi...

Largeau Ludovic	(+33) 1 69 63 61 74
Patriarche Gilles	(+33) 1 69 63 61 73
Travers Laurent	(+33) 1 69 63 60 65
Gogneau Noëlle	(+33) 1 69 63 61 75
Galopin Elisabeth	(+33) 1 69 63 60 66
Mauguin Olivia	(+33) 1 69 63 61 07
Beveratos Alexios	(+33) 1 69 63 61 78
Faini Giancarlo	(+33) 1 69 63 61 26
Gauthron Karine	(+33) 1 69 63 61 94
Gierak Jacques	(+33) 1 69 63 60 75
Mailly Dominique	(+33) 1 69 63 61 27
Ramdane Abderrahim	(+33) 1 69 63 61 50
Voisin Paul	(+33) 1 69 63 61 93
Wang Zhao-Zhong	(+33) 1 69 63 61 85
Péré-Laperne Nicolas	(+33) 1 69 63 63 01
Jabeen Fauzia	(+33) 1 69 63 60 99
Ramdani Mohammed Réda	(+33) 1 69 63 63 76
Lucot Damien	(+33) 1 69 63 60 64
Cohin Yann	(+33) 1 69 63 63 76
Costard Julien	(+33) 1 69 63 60 42

Publications

• Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy , E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, J.-C. Harmand, Nanotechnology 22, 245606 (2011)
• Correlation of optical and structural properties of GaN/AlN core-shell nanowires , L. Rigutti, G. Jacopin, L. Largeau, E. Galopin, A. De Luna Bugallo, F.H. Julien, J.-C. Harmand, F. Glas, M. Tchernycheva, Phys. Rev. B 83, 155320 (2011)
• Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate , M.H.H. Alouane, R. Anufriev, N. Chauvin, H. Khmissi, K. Naji, B. Ilahi, H. Maaref, G. Patriarche, M. Gendry, C. Bru-Chevalier, Nanotechnology 22, 405702 (2011)
• Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient , D. H. K. Murthy, T. Xu, W. H. Chen, A. J. Houtepen, T. J. Savenije, L. D. A. Siebbeles, J. P. Nys, C. Krzeminski, B. Grandidier, D. Stievenard, P. Pareige, F. Jomard, G. Patriarche, O. I. Lebedev, Nanotechnology 22, 315710 (2011)
• Gold anchoring on Si sawtooth faceted nanowires , R. Boukhicha, C. Gardes, L. Vincent, C. Renard, V. Yam, F. Fossard, G. Patriarche, F. Jabeen, D. Bouchier, Europhys. Lett. 95, 18004 (2011)
• Confined and Guided Vapor-Liquid-Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers , A. Lecestre, E. Dubois, A. Villaret, T. Skotnicki, P. Coronel, G. Patriarche, C. Maurice, aucun , 67 (2011)
• Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy , T. Xu, J. Sulerzycki, J. P. Nys, G. Patriarche, B. Grandidier, D. Stievenard, Nanoscale Res. Lett. 6, 113 (2011)
• Vapor fluxes on the apical droplet during nanowire growth by molecular beam epitaxy , F. Glas, Phys. Stat. Sol. (b) 247, 254 (2010)
• Nucleation antibunching in catalyst-assisted nanowire growth , F. Glas, J.-C. Harmand, G. Patriarche, Phys. Rev. Lett. 104, 135501 (2010)
• Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors , F. Glas, G. Patriarche, J.-C. Harmand, J. Phys.: Conf. Ser. 209, 12002 (2010)
• Growth kinetics of a single InP1-xAsx nanowire , J.-C. Harmand, F. Glas, G. Patriarche, Phys. Rev. B 81, 235436 (2010)
• Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy , C. Sartel, D.L. Dheeraj, F. Jabeen, J.-C. Harmand, J. Cryst. Growth 312, 2073 (2010)
• Silicon nanowires: Diameter dependence of growth rate and delay in growth , F. Dhalluin, T. Baron, P. Ferret, B. Salem, B. Gentile, J.-C. Harmand, Appl. Phys. Lett. 96, 1198 (2010)
• Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires , J.-M. Jancu, K. Gauthron, L. Largeau, G. Patriarche, J.-C. Harmand, P. Voisin, Appl. Phys. Lett. 97, 041910 (2010)
• Chemical potentials for Au-assisted vapor-liquid-solid growth of III-V nanowires , F. Glas, J. Appl. Phys. 108, 073506 (2010)
• Growth of inclined GaAs nanowires by molecular beam epitaxy: theory and experiment , X. Zhang, V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, C. Sartel, M. Tchernycheva, J.-C. Harmand, F. Glas, Nanoscale Res. Lett. 5, 1692 (2010)
• Investigation of the electronic transport in GaN nanowires containing GaN/AlN quantum discs , L. Rigutti, G. Jacopin, A.D. Bugallo, M. Tchernycheva, E. Warde, F.H. Julien, R. Songmuang, E. Galopin, L. Largeau, J.-C. Harmand, Nanotechnology 21, 425206 (2010)
• Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates , G. E. Cirlin, V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, Yu. B. Samsonenko, A. D. Bouravleuv, J.-C. Harmand, F. Glas, Phys. Stat. Sol. RRL 3, 112 (2009)
• Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires , D.L. Dheeraj, G. Patriarche, H.L. Zhou, J.-C. Harmand, H. Weman, B. O. Fimland, J. Cryst. Growth 311, 1847 (2009)
• Role of nonlinear effects in nanowire growth and crystal phase , V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, A. D. Bouravleuv, Yu. B. Samsonenko, D.L. Dheeraj, H.L. Zhou, C. Sartel, J.-C. Harmand, G. Patriarche, F. Glas, Phys. Rev. B 80, 205305 (2009)
• Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy , H.L. Zhou, T. B. Hoang, D.L. Dheeraj, A.T.J. van Helvoort, L. Liu, J.-C. Harmand, B. O. Fimland, H. Weman, Nanotechnology 20, 415701 (2009)
• Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures , D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Rossler, F. Peiro, J. R. Morante, G. Abstreiter, L. Samuelson, A. Fontcuberta i Morral, Phys. Rev. B 80, 245325 (2009)
• Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy , L. Rigutti, A.D. Bugallo, M. Tchernycheva, G. Jacopin, F.H. Julien, G. E. Cirlin, G. Patriarche, D. Lucot, L. Travers, J.-C. Harmand, JNM 2009, 435451 (2009)
• Zinc blende GaAsSb nanowires grown by molecular beam epitaxy , D.L. Dheeraj, G. Patriarche, L. Largeau, H.L. Zhou, A.T.J. van Helvoort, F. Glas, J.-C. Harmand, B. O. Fimland, H. Weman, Nanotechnology 19, 275605 (2008)
• Nanocolonnes semi-conductrices , J.-C. Harmand, F. Glas, G. Patriarche, M. Tchernycheva, Images de la Physique 2007, 57 (2008)
• Wurtzite to zinc-blende phase transition in GaAs nanowires induced by epitaxial burying , G. Patriarche, F. Glas, M. Tchernycheva, C. Sartel, L. Largeau, J.-C. Harmand, G. E. Cirlin, Nano Lett. 8, 1638 (2008)
• Shape modification of III-V nanowires: The role of nucleation on sidewalls , V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, M. Tchernycheva, J.-C. Harmand, V. Ustinov, Phys. Rev. E 77, 031606 (2008)
• Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111) , L. Largeau, D.L. Dheeraj, M. Tchernycheva, G. E. Cirlin, J.-C. Harmand, Nanotechnology 19, 155704 (2008)
• Heterostructure formation in nanowhiskers via diffusion mechanism , M. V. Nazarenko, N. V. Sibirev, G. E. Cirlin, G. Patriarche, J.-C. Harmand, V. G. Dubrovskii, Technical Phys. Lett. 34, 750 (2008)
• Growth kinetics and crystal structure of semiconductor nanowires , V. G. Dubrovskii, N. V. Sibirev, J.-C. Harmand, F. Glas, Phys. Rev. B 78, 235301 (2008)
• Optics with single nanowires , V. Zwiller, N. Akopian, M. van Weert, M. van Kouwen, U. Perinetti, L. Kouwenhoven, R. Algra, J.G. Rivas, E. Bakkers, G. Patriarche, L. Liu, J.-C. Harmand, Y. Kobayashi, J. Motohisa, C. R. Acad. Sci. Phys. 9, 804 (2008)
• Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy , G. E. Cirlin, N. V. Sibirev, C. Sartel, J.-C. Harmand, Semicond. 42, 710 (2008)
• Growth and Characterization of Wurtzite GaAs Nanowires with Defect-Free Zinc Blende GaAsSb Inserts , D.L. Dheeraj, G. Patriarche, H.L. Zhou, T. B. Hoang, A.F. Moses, S. Gronsberg, A.T.J. van Helvoort, B. O. Fimland, H. Weman, Nano Lett. 8, 4459 (2008)
• Why does wurtzite form in nanowires of III-V zinc-blende semiconductors? , F. Glas, J.-C. Harmand, G. Patriarche, Phys. Rev. Lett. 99, 146101 (2007)
• Growth and characterization of InP nanowires with InAsP insertions , M. Tchernycheva, G. E. Cirlin, G. Patriarche, L. Travers, V. Zwiller, U. Perinetti, J.-C. Harmand, Nano Lett. 7, 1500 (2007)
• Effect of deposition conditions on nanowhisker morphology , V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, G. E. Cirlin, V. Ustinov, M. Tchernycheva, J.-C. Harmand, Semicond. 41, 865 (2007)
• Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization , M. Tchernycheva, C. Sartel, G. E. Cirlin, L. Travers, G. Patriarche, J.-C. Harmand, D. Le Si Dang, J. Renard, B. Gayral, L. Nevou, F. Julien, Nanotechnology 18, 385306 (2007)
• Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis , M. Tchernycheva, L. Travers, G. Patriarche, F. Glas, J.-C. Harmand, G. E. Cirlin, V. G. Dubrovskii, J. Appl. Phys. 102, 094313 (2007)
• Calculation of the temperature profile in nanowhiskers growing on a hot substrate , F. Glas, J.-C. Harmand, Phys. Rev. B 73, 155320 (2006)
• Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy , V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, J.-C. Harmand, V. Ustinov, Phys. Rev. E 73, 21603 (2006)
• Temperatures conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy , M. Tchernycheva, J.-C. Harmand, G. Patriarche, L. Travers, G. E. Cirlin, Nanotechnology 17, 4025 (2006)
• Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials , P. Cheyssac, M. Sacilotti, G. Patriarche, J. Appl. Phys. 100, 044315 (2006)
• Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires , F. Glas, Phys. Rev. B 74, 121302 (2006)
• The role of surface diffusion of adatoms in the formation of nanowire crystals , V. G. Dubrovskii, N. V. Sibirev, RA Suris, G. E. Cirlin, V.M. Ustinov, M. Tchernycheva, J.-C. Harmand, Semicond. 40, 1075 (2006)
• Analysis of vapor-liquid-solid mechanism for Au-assisted GaAs nanowire growth , J.-C. Harmand, G. Patriarche, N. Péré-Laperne, M.-N. Mérat-Combes, L. Travers, F. Glas, Appl. Phys. Lett. 87, 203101 (2005)

Contrats et projets

Projets Internationaux

UPSTIN : ultra-low power spin transistor based on InAs nanowires

Référence de contrat : ANR Blanc International
Coordinateur, Partenaire(s) : K. Yoh (RCIQE - University of Hokkaido)
Responsable(s) LPN : Jean-Christophe Harmand
Principaux objectifs : To establish the basis of ultra-low-power circuit operation by achieving steep slope of gate voltage for on/off switching through the successful Datta-Das type spin transistor of semiconductor nanowires. The devices are hybrid systems consisting of ferromagnetic contacts deposited on InAs or InAs/InAsP core-shell nanowires. Coordinator: Kenji Yoh (RCIQE, University of Hokkaido, Sapporo, Japan) (2011-2013)

ILNACS : Nanostructures of Compound Semiconductors (Growth, properties, devices)

Référence de contrat : Laboratoire International Associé (LIA) CNRS - Université de Montpellier - INSA Toulouse / Académie des Sciences de Russie - Fondation Russe pour la Recherche Fondamentale
Responsable(s) LPN : Frank Glas
Principaux objectifs : Coordonner et développer les collaborations scientifiques entre les laboratoires du CNRS et les laboratoires et instituts de l'académie des sciences russe basés à Saint-Petersbourg dans le domaine de la croissance et de l'étude des propriétés physiques des nanostructures de semiconducteurs composés, et des composants basés sur ces structures. (2010-2013)




Réseaux Internationaux

SANDIE : Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics

Référence de contrat : Programme: FP6 – NMP- Network of Excellence
Coordinateur, Partenaire(s) : M. Grundman (Université de Leipzig),
Responsable(s) LPN : Abderrahim Ramdane, Aristide Lemaître
Principaux objectifs : Nanostructures auto-organisées pour les nouveaux composants en électronique et photonique (2004-2008)




ANR PNANO

INSCOOP : Intégration de Nanofils III-V sur SOI pour COnnections Optiques sur Puce

Référence de contrat : ANR P3N
Coordinateur, Partenaire(s) : M. Gendry (Institut des Nanotechnologies de Lyon)
Principaux objectifs : Intégration de Nanofils III-V sur SOI pour COnnections Optiques sur Puce (2011-2014)

BONAFO : boîtes dans nanofils pour l'optique

Référence de contrat : ANR PNANO
Coordinateur, Partenaire(s) : K. Kheng (INAC / CEA )
Responsable(s) LPN : Jean-Christophe Harmand
Principaux objectifs : L’objectif est de développer la croissance d’hétérostructures dans des nanofils de semiconducteurs de gap direct, notamment des boîtes quantiques uniques, de comprendre et d’exploiter leur propriétés optiques. Partenaires: SP2M-CEA, Institut Néel-CNRS, IEF-CNRS, LPA-ENS-CNRS (2009-2011)

FILEMON35 : Fils Epitaxiés par Croissance VLS de Matériaux III-V Organisés à l’échelle Nanométrique

Référence de contrat : ANR PNANO
Responsable(s) LPN : Jean-Christophe Harmand
Principaux objectifs : Les principaux objectifs sont d’une part la compréhension des mécanismes qui régissent la croissance VLS, d’autre part la fabrication de nanofils fonctionnels et l’exploration de leur propriétés d’émission et de transport. (2005-2008)

Stages passés et en cours

Post-doctorat

• Electronic transport in core-shell nanowires

M.R. Ramdani-(En cours depuis 2011-01-01)
Thème : Physique et élaboration des hétérostructures (PHEH)
Contact : J.-C. Harmand
Groupe : Elaboration et Physique des Structures Epitaxiées (ELPHYSE)
            Physique et Technologie des Nanostructures (PHYNANO)
En savoir plus


Semiconductor nanowires elaborated by catalyst-assisted growth are very flexible to fabricate complex and original heterostructures. In particular, the core-shell heterostructure allows forming an electron gas which is confined at the core/shell interface. At small core diameter, the electron gas is expected to be quasi one-dimensional (1D).
Several groups study the electronic transport in nanowires or nanotubes, but very few convincing results are published, for instance on the observation of quantum interferences expected in such systems. Although the material quality is generally much better in nanowires formed by bottom-up growth as compared to those obtained by etching techniques, these nanostructures are not yet ideal and many critical issues have to be addressed to improve their characteristics: control of the crystal phase, material purity, doping efficiency, contacts, surface passivation…
LPN has developed a complete process to fabricate devices from single vertically standing nanowires which include a GaAs core and a δ-doped GaAlAs shell (Fig. 1a and 1b). Their spatial location and their diameter are controlled by organizing the catalyst before growth by electron-beam lithography. Then, the nanowires are buried by undoped epitaxial GaAs (Fig. 5c). This step allows planarization, removes crystalline defects and suppresses the sidewall surface states. Metallic contacts are deposited on the emerging tips of the wire and on the highly doped substrate. Preliminary transport measurements on these original devices have revealed that the carrier gas experiences weak localization and anti-weak localization, indicating a strong spin-orbit coupling.
We propose to further elucidate the different regimes of electronic transport in these nanostructures and to identify the behaviors which are related to their 1D character. To this aim, we want to modulate the carrier concentration in the channel. This can be done by introducing a doped layer in the epitaxial burying which can serve as wrap-around gate electrode. The post-doc will participate actively to the fabrication such devices and to their characterization by low-temperature magneto-transport measurements. The activity will be led by ELPHYSE and PHYNANO research groups in LPN.
Bourse Cnano IdF


• Tranport cohérent dans les nanofils

D. Lucot-(En cours depuis 2010-01-01)
Thème : Nanostructures, gaz d'électron et électronique de spin (NGES)
            Physique et élaboration des hétérostructures (PHEH)
Contact : G. Faini , J.-C. Harmand
Groupe : Elaboration et Physique des Structures Epitaxiées (ELPHYSE)
            Physique et Technologie des Nanostructures (PHYNANO)
En savoir plus



• Nanowires for single photon emission

F. Jabeen-(En cours depuis 2009-06-01)
Thème : Physique et élaboration des hétérostructures (PHEH)
Contact : J.-C. Harmand
Groupe : Elaboration et Physique des Structures Epitaxiées (ELPHYSE)
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Thèse

• Photonique à nanofils semiconducteurs

J. Costard-(En cours depuis 2011-12-01)
Thème : Physique et élaboration des hétérostructures (PHEH)
Contact : J.-C. Harmand , P. Senellart
Groupe : Elaboration et Physique des Structures Epitaxiées (ELPHYSE)
            Groupe d'Optique des Structures Semi-conductrices (GOSS)
En savoir plus

La thèse se déroulera dans le cadre d’un projet ANR qui propose une stratégie originale pour faire des interconnexions optiques sur substrat de silicium. L’interconnexion est matérialisée par un guide d’onde optique réalisé dans une couche de Si sur SiO2. Un réseau de nanofils photoniques verticaux contenant une zone active émettrice (à la longueur d’onde de 1,2µm) sera réalisé sur ce guide d’onde. Ce réseau sera conçu pour former une cavité optique résonante. On cherchera à montrer que sous pompage optique, des modes de Bloch hybrides peuvent être amplifiés dans ce micro-résonateur à nanofils et se propager dans le guide Si.


• Substrats et catalyseurs alternatifs pour la croissance auto-organisée de nanofils

Y. Cohin-(En cours depuis 2011-10-01)
Thème : Physique et élaboration des hétérostructures (PHEH)
Contact : J.-C. Harmand , E. Søndergård
Groupe : Elaboration et Physique des Structures Epitaxiées (ELPHYSE)
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Stage

• Modélisation du transfert de charge dans des nanofils à structure coeur-coquille avec dopage radial

G. Louis-(2010-05-17 / 2010-09-03)
Niveau : Master1
Thème : Physique et élaboration des hétérostructures (PHEH)
Contact : J.-C. Harmand , P. Voisin
Groupe : Elaboration et Physique des Structures Epitaxiées (ELPHYSE)
            Groupe d'Optique des Structures Semi-conductrices (GOSS)
En savoir plus