Présentation

	Quantum Dots
	III-V Nanowires
	HeterOpSi : Hétérostructures III-V pour l'optoélectronique sur Si
	PHeW : Planar heterostructures for wave engineering
	AMoN : Analysis and modelling of nanostructures
	SemiMag : Semiconducteurs semimagnétiques pour l'électronique de spin

Le groupe ELPHYSE fabrique des structures épitaxiées et étudie leurs propriétés physiques. Les structures épitaxiées sont des empilements de minces couches monocristallines de matériaux semiconducteurs, destinés à être intégrés dans des dispositifs optoélctroniques et microélectroniques. Le groupe mène une activité essentiellement expérimentale, avec une composante théorique. Il dispose de puissants moyens d'élaboration (épitaxie par jets moléculaires, épitaxie en phase vapeur aux organométalliques, collage épitaxial) et d'étude structurale, chimique, électronique et optique (diffraction des rayons X à haute résolution, microscopie électronique en transmission, nanoanalyse, spectroscopie Raman, photoluminescence).

Le spectre des objets étudiés est très large: alliages semiconducteurs III-V, empilements contraints, boîtes et fils quantiques, microstructures et nanostructures pour la photonique, matériaux pour l'électronique de spin. Une part importante de nos activités est consacrée au développement d'objets originaux : nouveaux alliages, semiconducteurs semimagnétiques, structures épitaxiées complexes, nouveaux substrats, membranes…

Nos travaux portent sur la formation de ces objets, sur leur structure, leur stabilité et leurs défauts, et sur leurs propriétés optiques et électroniques. Une large part de ces recherches est menée en collaboration, tant avec les autres équipes du Laboratoire (dont la plupart des études sont alimentées par les objets que nous développons) qu'avec de nombreux partenaires nationaux et internationaux (académiques et industriels).

Faits Marquants

• Une illustration expérimentale des niveaux électroniques d’un puits de potentiel : les fonctions d’onde des états propres des boites quantiques InAsP/InP imagées par microscopie/spectroscopie à effet tunnel (STM/STS) (2012-05-04)
  Thème(s) : Nanostructures, gaz d'électron et électronique de spin
  
  

Membres

Animateur

Glas Frank

(+33) 1 69 63 60 79

Permanents

Beaudoin Gregoire	(+33) 1 69 63 62 45
Gogneau Noelle	(+33) 1 69 63 61 75
Harmand Jean-Christophe	(+33) 1 69 63 60 81
Largeau Ludovic	(+33) 1 69 63 61 74
Lemaitre Aristide	(+33) 1 69 63 60 72
Mauguin Olivia	(+33) 1 69 63 61 07
Patriarche Gilles	(+33) 1 69 63 61 73
Sagnes Isabelle	(+33) 1 69 63 61 71
Travers Laurent	(+33) 1 69 63 60 65

Stagiaires, doctorants, post-docs, invités

Vu Thi_nhung	(+33) 1 69 63 60 99
Ramdani Mohammed Reda	(+33) 1 69 63 63 76
Yroh Serge	(+33) 1 69 63 61 75
Gozhyk Irina	(+33) 1 69 63 61 71
Cohin Yann	(+33) 1 69 63 60 99
Pantzas Konstantinos	(+33) 1 69 63 60 54
Bahri Mounib	(+33) 1 69 63 61 74

Brevets

• Sources et capteurs de lumiere comprenant au moins une microcavite a mode TAMM plasmonique localise, P. Senellart, A. Lemaitre, S. Michaelis de Vasconcellos, O. Gazzano, J. Bellessa, O. Daniel, FR 1003/881 , (2010-09-30)
  
• Heterostructures semiconductrices monolithiques epitaxiees et leur procede de fabrication (International Application No.: PCT/FR2008/051669), G. Saint-Girons, L. Largeau, G. Patriarche, P. Regreny, G. Hollinger, FR 2008/051669, (2008-09-17)
  

Publications récentes

• Fabrication and characterization of a room-temperature ZnO polariton laser [PDF] , F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, G. Malpuech, M. Mexis, M. Mihailovic, G. Patriarche, F. Reveret, D. Solnyshkov, J. Zuniga-Perez, Appl. Phys. Lett. 102, 191118 [4 pages] (2013)
• From excitonic to photonic polariton condensate in a ZnO-based microcavity , F. Li, L. Orosz, O. Kamoun, S. Bouchoule, C. Brimont, P. Disseix, T. Guillet, X. Lafosse, M. Leroux, J. Leymarie, M. Mexis, M. Mihailovic, G. Patriarche, F. Reveret, D. Solnyshkov, J. Zuniga-Perez, G. Malpuech, Phys. Rev. Lett. 110, 196406 [5 pages] (2013)
• Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice , J. Song, S. Bouchoule, G. Patriarche, E. Galopin, A. Giacomotti, E. Cambril, Q. Kou, D. Troadec, J.-J. He, J.-C. Harmand, Phys. Status Solidi A-Appl. Mat. 1-7, (2013)
• Arsenic Pathways in Self-Catalyzed Growth of GaAs Nanowires , M.R. Ramdani, J.-C. Harmand, F. Glas, G. Patriarche, L. Travers, Cryst. Growth Des. 13, 91 (2013)
• Propagation and Amplification Dynamics of 1D Polariton Condensates , E. Wertz, A. Amo, D. Solnyshkov, L. Ferrier, T.C.H. Liew, D. Sanvitto, P. Senellart, I. Sagnes, A. Lemaitre, A. V. Kavokin, G. Malpuech, J. Bloch, Phys. Rev. Lett. 109, 216404 (2012)
• Stress-driven island growth on top of nanowires , F. Glas, B. Daudin, Phys. Rev. B 86, 174112 Editor's choice (2012)
• Optical Nonlinearity for Few-Photon Pulses on a Quantum Dot-Pillar Cavity Device , V. Loo, C. Arnold, O. Gazzano, A. Lemaitre, I. Sagnes, O. Krebs, P. Voisin, P. Senellart, L. Lanco, Phys. Rev. Lett. 109, 166806 (2012)
• Convergent beam electron diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures , S. Frabboni, V. Grillo, G. C. Gazzadi, R. Balboni, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini, G. Guzzinati, F. Glas, Appl. Phys. Lett. 101, 111912 (2012)
• Nanoscale concentration and strain distribution in pseudomorphic films Si1-xGex/Si processed by pulsed laser induced epitaxy , L. Vincent, F. Fossard, T. Kociniewski, L. Largeau, N. Cherkashin, M. Hytch, D. Debarre, T. Sauvage, A. Claverie, J. Boulmer, D. Bouchier, Appl. Surf. Sci. 23, 9208 (2012)
• Magnetic thaw down and boil-off of electrons in the quantum Hall effect regime due to magnetoacceptors in GaAs/GaAlAs heterostructures , I. Bisotto, C. Chaubet, A. Raymond, J.-C. Harmand, M. Kubisa, W. Zawadzki, Phys. Rev. B 86, 85321 (2012)
• Bunching visibility of optical parametric emission in a semiconductor microcavity , V. Ardizzone, M. Abbarchi, A. Lemaitre, I. Sagnes, P. Senellart, J. Bloch, C. Delalande, J. Tignon, P. Roussignol, Phys. Rev. B 86, 04131 (R) (2012)
• Dual Antiferromagnetic Coupling at La0.67Sr0.33MnO3/SrRuO3 Interfaces , A. Solignac, R. Guerrero, P. Gogol, T. Maroutian, F. Ott, L. Largeau, P. Lecoeur, M. Pannetier-Lecoeur, Phys. Rev. Lett. 109, 27201 (2012)
• Photovoltaic properties of GaAsP core-shell nanowires on Si(001) substrate , M. Tchernycheva, L. Rigutti, G. Jacopin, A.D. Bugallo, P. Lavenus, F.H. Julien, M. Timofeeva, A. D. Bouravleuv, G. E. Cirlin, V. Dhaka, H. Lipsanen, L. Largeau, Nanotechnology 26, 265402 (2012)
• Effect of diffusion from a lateral surface on the rate of GaN nanowire growth , N. V. Sibirev, M. Tchernycheva, G. E. Cirlin, G. Patriarche, J.-C. Harmand, V. G. Dubrovskii, Semicond. 6, 838 (2012)
• N-Polar GaN Nanowires Seeded by Al Droplets on Si(111) , L. Largeau, E. Galopin, N. Gogneau, L. Travers, F. Glas, J.-C. Harmand, Cryst. Growth Des. 12, 2724 (2012)
• Control of tensile strain in germanium waveguides through silicon nitride layers , A. Ghrib, M. de Kersauson, M. El Kurdi, R. Jakomin, G. Beaudoin, S. Sauvage, G. Fishman, G. Ndong, M. Chaigneau, R. Ossikovski, I. Sagnes, P. Boucaud, Appl. Phys. Lett. 100, 201104 (2012)
• Influence of shadow effect on the growth and shape of InAs nanowires , N. V. Sibirev, M. Tchernycheva, M. Timofeeva, J.-C. Harmand, G. E. Cirlin, V. G. Dubrovskii, J. Appl. Phys. 111, 104317 (2012)
• Giant photoinduced Faraday rotation due to the spin-polarized electron gas in an n-GaAs microcavity , R. Giri, S. Cronenberger, M. Vladimirova, D. Scalbert, K. V. Kavokin, M.M. Glazov, M. Nawrocki, A. Lemaitre, J. Bloch, Phys. Rev. B 85, 195313 (2012)
• Discretization of Electronic States in Large InAsP/InP Multilevel Quantum Dots Probed by Scanning Tunneling Spectroscopy , B. Fain, I. Robert-Philip, A. Beveratos, C. David, Z.-Z. Wang, I. Sagnes, J.-C. Girard, Phys. Rev. Lett. 108, 126808 (2012)
• Polariton condensation in photonic molecules , M. Galbiati, L. Ferrier, D. Solnyshkov, D. Tanese, E. Wertz, A. Amo, M. Abbarchi, P. Senellart, I. Sagnes, A. Lemaitre, E. Galopin, G. Malpuech, J. Bloch, Phys. Rev. Lett. 108, 126403 (2012)
• Growth mechanism and properties of InGaN insertions in GaN nanowires , G. Tourbot, C. Bougerol, F. Glas, L. F. Zagonel, Z. Mahfoud, S. Meuret, P. Gilet, M. Kociak, B. Gayral, B. Daudin, Nanotechnology 23, 135703 (2012)
• Optical bistability in a quantum dots/micropillar device with a quality factor exceeding 200 000 , C. Arnold, V. Loo, A. Lemaitre, I. Sagnes, O. Krebs, P. Voisin, P. Senellart, L. Lanco, Appl. Phys. Lett. 100, 111111 (2012)
• Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in-situ X-ray photoelectron spectroscopy [PDF] , S. Bouchoule, L. Vallier, G. Patriarche, T. Chevolleau, C. Cardinaud, J. Vac. Sci. Technol. A 30, 31301 (2012)
• Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaN , L. Magdenko, G. Patriarche, D. Troadec, O. Mauguin, E. Morvan, M.-A. di Forte-Poisson, K. Pantzas, A. Ougazzaden, A. Martinez, A. Ramdane, J. Vac. Sci. Technol. B 30, 22205 (2012)
• A cost-effective thermally-managed 1.55 µm VECSEL with hybrid mirror on copper substrate , Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, J.-L. Oudar, IEEE J. Quant. Electron. 48, 643 (2012)
• High domain wall velocities in in-plane magnetized (Ga,Mn)(As,P) layers , L. Thevenard, H. J. von Bardeleben, S. A. Hussain, J. Von Bardeleben, M. Bernard, A. Lemaitre, C. Gourdon, Phys. Rev. B 85, 64419 (2012)
• Spin Drift Velocity, Polarization, and Current-Driven Domain-Wall Motion in (Ga,Mn)(As,P) , J. Curiale, A. Lemaitre, C. Ulysse, G. Faini, V. Jeudy, Phys. Rev. Lett. 108, 76604 (2012)
• High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities , R. Kuszelewicz, J.-M. Benoit, S. Barbay, A. Lemaitre, G. Patriarche, K. Gauthron, A. Tierno, T. Ackemann, J. Appl. Phys. 111, 43107 (2012)
• Picosecond to sub-picosecond pulse generation from mode-locked VECSELs at 1.55 μm , S. Bouchoule, Z. Zhao, A. Khadour, E. Galopin, J.-C. Harmand, J. Song, G. Aubin, J. Decobert, J.-L. Oudar, Proc. SPIE 8242, 824203 (2012)
• Conduction band structure in wurtzite GaAs nanowires: A resonant Raman scattering study , W. Peng, F. Jabeen, B. Jusserand, J.-C. Harmand, M. Bernard, Appl. Phys. Lett. 100, 73102 (2012)
• Gold nanocluster distribution on faceted and kinked Si nanowires , R. Boukhicha, L. Vincent, C. Renard, C. Gardes, V. Yam, F. Fossard, G. Patriarche, F. Jabeen, D. Bouchier, Thin Solid Films 520, 3304 (2012)
• Faceting mechanisms of Si nanowires and gold spreading , L. Vincent, R. Boukhicha, C. Gardes, C. Renard, V. Yam, F. Fossard, G. Patriarche, D. Bouchier, J. Mater. Sci. 47, 1609 (2012)
• Effect of Postgrowth Heat Treatment on the Structural and Optical Properties of InP/InAsP/InP Nanowires , G. E. Cirlin, M. Tchernycheva, G. Patriarche, J.-C. Harmand, Semicond. 46, 175 (2012)
• Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications , M. Abid, T. Moudakir, G. Orsal, S. Gautier, A. E. Naciri, Z. Djebbour, J. -H. Ryou, G. Patriarche, L. Largeau, H. J. Kim, Z. Lochner, K. Pantzas, D. Alamarguy, F. Jomard, R. D. Dupuis, J. -P. Salvestrini, P. L. Voss, A. Ougazzaden, Appl. Phys. Lett. 100, 51101 (2012)
• Backscattering suppression in supersonic 1D polariton condensates , D. Tanese, D. Solnyshkov, A. Amo, L. Ferrier, E. Bernet-Rollande, E. Wertz, I. Sagnes, A. Lemaitre, P. Senellart, G. Malpuech, J. Bloch, Phys. Rev. Lett. 108, 36405 (2012)
• Discretized disorder in planar semiconductor microcavities: Mosaicity effect on resonant Rayleigh scattering and optical parametric oscillation , M. Abbarchi, C. Diederichs, L. Largeau, V. Ardizzone, O. Mauguin, T. Lecomte, A. Lemaitre, J. Bloch, P. Roussignol, J. Tignon, Phys. Rev. B 85, 45316 (2012)
• Electrical modulation of the complex refractive index in mid-infrared quantum cascade lasers , J. Teissier, S. Laurent, C. Manquest, C. Sirtori, A. Bousseksou, J.-R. Coudevylle, R. Colombelli, G. Beaudoin, I. Sagnes, Optics Express 20, 1172 (2012)
• Dispersion and damping of multiple quantum-well polaritons from resonant Brillouin scattering by folded acoustic modes , B. Jusserand, A. Fainstein, R. Ferreira, S. Majrab, A. Lemaitre, Phys. Rev. B 85, 41302 (2012)
• Optical pumping and reversal of hole spin in InAs/GaAs quantum dots , F. Fras, M. Chamarro, B. Eble, F. Bernardot, C. Testelin, A. Miard, A. Lemaitre, Appl. Phys. Lett. 100, 12104 (2012)
• Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain , A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vezian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, M. Portail, Phys. Stat. Sol. (c) 9, N?2, 175 (2012)
• Stored elastic energy influence on the elastic-plastic transition of GaAs structures , E. Le Bourhis, S. Tricard, L. Largeau, C. Costa-Coquelard, G. Patriarche, F. Volatron, B. Fleury, V. Huc, T.C.H. Liew, C. David, F. Miserque, P. Jegou, S. Palacin, T. Mallah, J. Mater. Res. 27, 177 (2012)
• Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range , J. Pulka, T. Piwonski, G. Huyet, J. Houlihan, E. Semenova, A. Lemaitre, K. Merghem, A. Martinez, A. Ramdane, Appl. Phys. Lett. 100, 071107 (2012)
• Higher-order photon correlations in pulsed photonic crystal nanolasers , D. Elvira, X. Hachair, V. B. Verma, R. Braive, G. Beaudoin, I. Robert-Philip, I. Sagnes, B. Baek, S. W. Nam, E. A. Dauler, I. Abram, M. J. Stevens, A. Beveratos, Phys. Rev. A 84, 061802(R) (2011)
• Evidence for Confined Tamm Plasmon Modes under Metallic Microdisks and Application to the Control of Spontaneous Optical Emission , O. Gazzano, S. Michaelis de Vasconcellos, K. Gauthron, C. Symonds, J. Bloch, P. Voisin, J. Bellessa, A. Lemaitre, P. Senellart, Phys. Rev. Lett. 107, 247402 (2011)
• Current induced domain wall motion in GaMnAs close to the Curie temperature , V. Jeudy, J. Curiale, J.-P. Adam, A. Thiaville, A. Lemaitre, G. Faini, J. Phys.: Condens. Matter 23, 446004 (2011)
• Terahertz coherent acoustic experiments with semiconductor superlattices , A. Huynh, B. Perrin, B. Jusserand, A. Lemaitre, Appl. Phys. Lett. 99, 191908 (2011)
• Nearly-degenerate three-wave mixing at 1.55 mu m in oxidized AlGaAs waveguides , M. Savanier, A. Andronico, A. Lemaitre, C. Manquest, I. Favero, S. Ducci, G. Leo, Optics Express 19, 22582 (2011)
• Single InAsP/InP quantum dots as telecommunications-band photon sources , D. Elvira, R. Hostein, B. Fain, L. Moniello, A. Michon, G. Beaudoin, R. Braive, I. Robert-Philip, I. Abram, I. Sagnes, A. Beveratos, Phys. Rev. B 84, 195302 (2011)
• Picosecond carrier lifetimes in dilute GaInNAs grown on InP substrate , J. Mangeney, M. Martin, J.-C. Harmand, L. Travers, O. Mauguin, Appl. Phys. Lett. 99, 141902 (2011)
• Towards the experimental demonstration of quantum radiation pressure noise , P. Verlot, A. Tavernarakis, C. Molinelli, A. Kuhn, T. Antoni, S. Gras, T. Briant, P.-F. Cohadon, A. Heidmann, L. Pinard, C. Michel, R. Flaminio, M. Bahriz, O. Le Traon, I. Abram, A. Beveratos, R. Braive, I. Sagnes, I. Robert-Philip, C.R. Phys. 12, 826 (2011)
• Fast control of nuclear spin polarization in an optically pumped single quantum dot , M. N. Makhonin, K. V. Kavokin, P. Senellart, A. Lemaitre, A.J. Ramsay, M. Skolnick, A. I. Tartakovskii, Nature Materials 10, 844 (2011)
• Optical Pumping and a Nondestructive Readout of a Single Magnetic Impurity Spin in an InAs/GaAs Quantum Dot , E. Baudin, E. Benjamin, A. Lemaitre, O. Krebs, Phys. Rev. Lett. 107, 197402 (2011)
• Optical orientation of bright excitons in InAs/GaAs quantum dots: Influence of a Faraday magnetic field and the dark exciton states , S. Sancho, M. Chaouache, M. A. Maaref, F. Bernardot, B. Eble, A. Lemaitre, C. Testelin, Phys. Rev. B 84, 155458 (2011)
• Growth-in-place deployment of in-plane silicon nanowires , L. Yu, W. Chen, B. O'Donnell, G. Patriarche, S. Bouchoule, P. Pareige, R. Rogel, A.-C. Salaun, L. Pichon, P. Roca i Cabarrocas, Appl. Phys. Lett. 99, 203104 (2011)
• Critical optical coupling between a GaAs disk and a nanowaveguide suspended on the chip , C. Baker, C. Belacel, A. Andronico, P. Senellart, A. Lemaitre, E. Galopin, S. Ducci, G. Leo, I. Favero, Appl. Phys. Lett. 99, 151117 (2011)
• Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate , M.H.H. Alouane, R. Anufriev, N. Chauvin, H. Khmissi, K. Naji, B. Ilahi, H. Maaref, G. Patriarche, M. Gendry, C. Bru-Chevallier, Nanotechnology 22, 405702 (2011)
• Nanostructuring graphene on SiC by focused ion beam: Effect of the ion fluence , B. Prevel, J.-M. Benoit, L. Bardotti, P. Melinon, A. Ouerghi, D. Lucot, E. Bourhis, J. Gierak, Appl. Phys. Lett. 99, 83116 (2011)
• Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers , A. Balan, A. Ouerghi, M. Ridene, A. Balan, R. Belkhou, A. Barbier, N. Gogneau, M. Portail, A. Michon, S. Latil, P. Jegou, A. Shukla, Phys. Rev. B 83, 205429 (2011)
• Ferromagnetism in Ga(0.90)Mn(0.10)As(1-y)P(y): From the metallic to the impurity band conduction regime , M. Cubukcu, H. J. von Bardeleben, J. Von Bardeleben, J. L. Cantin, I. Vickridge, A. Lemaitre, Thin Solid Films 519, 8212 (2011)
• Coherent control of sub-terahertz confined acoustic nanowaves: Theory and experiments , N.D. Lanzillotti-Kimura, A. Fainstein, A. Lemaitre, B. Jusserand, B. Perrin, Phys. Rev. B 84, 115453 (2011)
• Large Array of Sub-10-nm Single-Grain Au Nanodots for use in Nanotechnology , N. Clement, G. Patriarche, K. Smaali, F. Vaurette, K. Nishiguchi, D. Troadec, A. Fujiwara, D. Vuillaume, Small 7, 2607 (2011)
• Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires , G. Jacopin, L. Rigutti, L. Largeau, F. Fortuna, F. Furtmayr, F.H. Julien, M. Eickhoff, M. Tchernycheva, J. Appl. Phys. 110, 64313 (2011)
• Ultra-low threshold polariton lasing in photonic crystal cavities , S. Azzini, D. Gerace, M. Galli, I. Sagnes, R. Braive, A. Lemaitre, J. Bloch, D. Bajoni, Appl. Phys. Lett. 99, 111106 (2011)
• Hole-spin initialization and relaxation times in InAs/GaAs quantum dots , F. Fras, M. Chamarro, B. Eble, P. Desfonds, F. Bernardot, C. Testelin, A. Miard, A. Lemaitre, Phys. Rev. B 84, 125431 (2011)
• Radiation patterns from coupled photonic crystal nanocavities , M. Brunstein, T. J. Karle, I. Sagnes, F. Raineri, J. Bloch, Y. Halioua, G. Beaudoin, L. Le Gratiet, J. A. Levenson, A. Giacomotti, Appl. Phys. Lett. 99, 111101 (2011)
• Optical gain in single tensile-strained germanium photonic wire , M. de Kersauson, M. El Kurdi, S. David, X. Checoury, G. Fishman, S. Sauvage, R. Jakomin, G. Beaudoin, I. Sagnes, P. Boucaud, Optics Express 19, 17925 (2011)
• Spatial, spectral, and polarization properties of coupled micropillar cavities , S. Michaelis de Vasconcellos, A. Calvar, A. Dousse, J. Suffczynski, N. Dupuis, A. Lemaitre, I. Sagnes, J. Bloch, P. Voisin, P. Senellart, Appl. Phys. Lett. 99, 101103 (2011)
• Sub-picosecond pulse generation from a 1.56 μm mode-locked VECSEL , Z. Zhao, S. Bouchoule, J. Song, E. Galopin, J.-C. Harmand, J. Decobert, G. Aubin, J.-L. Oudar, Opt. Lett. 36 (issue 22), 4377 (2011)
• Deformable two-dimensional photonic crystal slab for cavity optomechanics , T. Antoni, A. Kuhn, T. Briant, P.-F. Cohadon, A. Heidmann, R. Braive, A. Beveratos, I. Abram, L. Le Gratiet, I. Sagnes, I. Robert-Philip, Opt. Lett. 36, 3434 (2011)
• Observation of noise phase locking in a single-frequency VECSEL , A. El Amili, V. Pal, F. Goldfarb, R. Ghosh, M. Alouini, I. Sagnes, F. Bretenaker, Optics Express 19, 17250 (2011)
• Harvesting light at the nanoscale by GaAs-gold nanowire arrays , S. Collin, F. Pardo, N. Bardou, A. Lemaitre, S. Averin, J.-L. Pelouard, Optics Express 19, 17293 (2011)
• Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient , D. H. K Murthy, T. Xu, W. H. Chen, A. J. Houtepen, T. J. Savenije, L. D. A Siebbeles, J. P. Nys, C. Krzeminski, B. Grandidier, D. Stievenard, P. Pareige, F. Jomard, G. Patriarche, O. I. Lebedev, Nanotechnology 22, 315710 (2011)
• Structural analysis of site-controlled InAs/InP quantum dots , B. Fain, D. Elvira, L. Le Gratiet, L. Largeau, G. Beaudoin, D. Troadec, I. Abram, A. Beveratos, I. Robert-Philip, G. Patriarche, I. Sagnes, J. Cryst. Growth 334, 37 (2011)
• Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface , S. P. Dash, H. Jaffres, S. Sharma, J. C. Le Breton, J. Peiro, H. Jaffres, J.-M. George, A. Lemaitre, R. Jansen, Phys. Rev. B 84, 54410 (2011)
• Large second-harmonic generation at 1.55 μmin oxidized AlGaAs waveguides , M. Savanier, A. Andronico, A. Lemaitre, E. Galopin, C. Manquest, I. Favero, S. Ducci, G. Leo, Opt. Lett. 26, 2955 (2011)
• Origin of light scattering in ytterbium doped calcium fluoride transparent ceramic for high power lasers , A. Lyberis, G. Patriarche, P. Gredin, D. Vivien, M. Mortier, JECS 31, 1619 (2011)
• Carrier wavefunction control in a dilute nitride-based quantum well-a quantum dot tunnel injection system for 1.3 mu m emission , W. Rudno-Rudzinski, K. Ryczko, G. Sek, J. Misiewicz, E. Semenova, A. Lemaitre, A. Ramdane, Semicond. Sci. Technol. 26, 85004 (2011)
• The influence of a continuum background on photoluminescence of self-assembled InAlAs/AlGaAs quantum dots , N. Sellami, A. Melliti, R. Othmen, M. A. Maaref, R. Kuszelewicz, A. Lemaitre, J. Lumin. 131, 1641 (2011)
• Ultrafast Gain and Refractive Index Dynamics in AlInAs/AlGaAs Quantum Dot Based Semiconductor Optical Amplifiers Operating at 800 nm , J. Pulka, T. Piwonski, G. Huyet, J. Houlihan, S. Barbay, A. Martinez, K. Merghem, A. Lemaitre, A. Ramdane, R. Kuszelewicz, IEEE J. Quant. Electron. 47, 1094 (2011)
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• Optical spectroscopy of two-dimensional layered (C6H5C2H4-NH3)(2)-PbI4 perovskite , K. Gauthron, J.-S. Lauret, L. Doyennette, G. Lanty, A. Al Choueiry, S.J. Zhang, A. Brehier, L. Largeau, O. Mauguin, J. Bloch, E. Deleporte, Optics Express 18, 5912 (2010)
• Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides , T. J. Karle, Y. Halioua, F. Raineri, P. Monnier, R. Braive, L. Le Gratiet, G. Beaudoin, I. Sagnes, G. Roelkens, F. Van Laere, D. Van Thourhout, R. Raj, J. Appl. Phys. 107, 63103 (2010)
• Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic Ga0.93Mn0.07As0.94P0.06/(100) GaAs thin films , M. Cubukcu, H. J. von Bardeleben, J. L. Cantin, A. Lemaitre, Appl. Phys. Lett. 96, 102502 (2010)
• Measurement of the coupling constant in a two-frequency VECSEL , V. Pal, P. Trofimoff, B.-X. Miranda, G. Baili, M. Alouini, L. Morvan, D. Dolfi, F. Goldfarb, I. Sagnes, R. Ghosh, F. Bretenaker, Optics Express 18, 5008 (2010)
• Transient thermoreflectance imaging of active photonic crystals , J. A. Levenson, V. Moreau, G. Tessier, F. Raineri, M. Brunstein, A. Giacomotti, R. Raj, I. Sagnes, J. A. Levenson, Y. De Wilde, Appl. Phys. Lett. 96, 91103 (2010)
• Small volume excitation and enhancement of dye fluorescence on a 2D photonic crystal surface , L. C. Estrada, O.E. Martinez, M. Brunstein, S. Bouchoule, L. Le Gratiet, A. Talneau, I. Sagnes, P. Monnier, J. A. Levenson, A. Giacomotti, Optics Express 18, 3693 (2010)
• Interface roughness transport in terahertz quantum cascade detectors , E. Lhuillier, I. Ribet-Mohamed, E. Rosencher, G. Patriarche, A. Buffaz, V. Berger, M. Carras, Appl. Phys. Lett. 96, 61111 (2010)
• Anomalous Hanle Effect due to Optically Created Transverse Overhauser Field in Single InAs/GaAs Quantum Dots , O. Krebs, P. Maletinsky, T. Amand, B. Urbaszek, A. Lemaitre, P. Voisin, X. Marie, A. Imamoglu, Phys. Rev. Lett. 104, 56603 (2010)
• Vapor fluxes on the apical droplet during nanowire growth by molecular beam epitaxy , F. Glas, Phys. Stat. Sol. (b) 247, 254 (2010)
• Non-random Be-to-Zn substitution in ZnBeSe alloys: Raman scattering and ab initio calculations , O. Pages, A. V. Postnikov, A. Chafi, D. Bormann, P. Simon, F. Glas, F. Firszt, W. Paszkowicz, E. Tournie, Eur. Phys. J. B 73, 461 (2010)
• Spontaneous nonground state polariton condensation in pillar microcavities , M. Maragkou, A. J. D Grundy, E. Wertz, A. Lemaitre, I. Sagnes, P. Senellart, J. Bloch, P. G. Lagoudakis, Phys. Rev. B 81, 81307 (2010)
• Nanophononic thin-film filters and mirrors studied by picosecond ultrasonics , N.D. Lanzillotti-Kimura, B. Perrin, A. Fainstein, B. Jusserand, A. Lemaitre, Appl. Phys. Lett. 96, 53101 (2010)
• Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast , P. Ridha, L.H. Li, M. Mexis, P. M. Smowton, J. Andrzejewski, G. Sek, J. Misiewicz, E. P. O'Reilly, G. Patriarche, A. Fiore, IEEE J. Quant. Electron. 46, 197 (2010)
• Fast manipulation of laser localized structures in a monolithic vertical cavity with saturable absorber , T. Elsass, K. Gauthron, G. Beaudoin, I. Sagnes, R. Kuszelewicz, S. Barbay, Appl. Phys. B 98, 327 (2010)
• Hole and trion spin dynamics in quantum dots under excitation by a train of circularly polarized pulses , B. Eble, P. Desfonds, F. Fras, F. Bernardot, C. Testelin, A. Miard, A. Lemaitre, Phys. Rev. B 81, 45322 (2010)
• Adjustable anisotropy in ferromagnetic (Ga,Mn) (As,P) layered alloys , M. Cubukcu, H. J. von Bardeleben, K. Khazen, J. L. Cantin, O. Mauguin, L. Largeau, A. Lemaitre, Phys. Rev. B 81, 41202 (2010)
• Microwave modulation of terahertz quantum cascade lasers: a transmission-line approach , W. Maineult, L. Ding, P. Gellie, P. Filloux, C. Sirtori, S. Barbieri, T. Akalin, J. -F. Lampin, I. Sagnes, H. E. Beere, D. A. Ritchie, Appl. Phys. Lett. 96, 21108 (2010)
• Nucleation antibunching in catalyst-assisted nanowire growth , F. Glas, J.-C. Harmand, G. Patriarche, Phys. Rev. Lett. 104, 135501 (2010)
• Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors , F. Glas, G. Patriarche, J.-C. Harmand, J. Phys.: Conf. Ser. 209, 12002 (2010)
• Growth kinetics of a single InP1-xAsx nanowire , J.-C. Harmand, F. Glas, G. Patriarche, Phys. Rev. B 81, 235436 (2010)
• Local structure of indium in quinary (InGa)(AsSbN)/GaAs quantum wells , J. Chen, J. Chen, G. Ciatto, M. Le Du, J.-C. Harmand, F. Glas, Phys. Rev. B 82, 125303 (2010)
• Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures , D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Rossler, F. Peiro, J. R. Morante, G. Abstreiter, L. Samuelson, A. Fontcuberta i Morral, Phys. Rev. B 80, 245325 (2009)
• Structure of annealed nanoindentations in n- and p-doped (001)GaAs , E. Le Bourhis, G. Patriarche, J. Appl. Phys. 106, 123516 (2009)
• Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature , F. Zhao, A. Balocchi, A. Kunold, J. Carrey, H. Carrere, T. Amand, N. Ben Abdallah, J.-C. Harmand, X. Marie, Appl. Phys. Lett. 95, 241104 (2009)
• Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001) , J. Cheng, T. Aviles, A. El Akra, C. Bru-Chevallier, L. Largeau, G. Patriarche, P. Regreny, A. Benamrouche, Y. Robach, G. Hollinger, G. Saint-Girons, Appl. Phys. Lett. 95, 232116 (2009)
• Control of polarization and dipole moment in low-dimensional semiconductor nanostructures , L.H. Li, M. Mexis, P. Ridha, M. Bozkurt, G. Patriarche, P. M. Smowton, P. Blood, P. M. Koenraad, A. Fiore, Appl. Phys. Lett. 95, 221116 (2009)
• Hybrid InP-based photonic crystal lasers on silicon on insulator wires , Y. Halioua, T. J. Karle, F. Raineri, P. Monnier, I. Sagnes, G. Roelkens, D. Van Thourhout, R. Raj, Appl. Phys. Lett. 95, 201119 (2009)
• Modal Behavior of Photonic Crystal Tapers for Improved Coupling Toward Cleaved-Facet Single-Mode Fiber , K.-H. Lee, S. Guilet, K. Merghem, I. Sagnes, A. Talneau, J. Lightwave Technol. 27, 5168 (2009)
• Role of nonlinear effects in nanowire growth and crystal phase , V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, A. D. Bouravleuv, Yu. B. Samsonenko, D.L. Dheeraj, H.L. Zhou, C. Sartel, J.-C. Harmand, G. Patriarche, F. Glas, Phys. Rev. B 80, 205305 (2009)
• Effects of repulsive and attractive ionized impurities on the resistivity of semiconductor heterostructures in the quantum Hall regime , A. Raymond, I. Bisotto, Y. M. Meziani, S. Bonifacie, C. Chaubet, A. Cavanna, J.-C. Harmand, Phys. Rev. B 80, 195316 (2009)
• Experimental demonstration of a tunable dual-frequency semiconductor laser free of relaxation oscillations , G. Baili, L. Morvan, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, A. Garnache, Opt. Lett. 34, 3421 (2009)
• Exciton polaritons in two-dimensional photonic crystals , D. Bajoni, D. Gerace, M. Galli, J. Bloch, R. Braive, I. Sagnes, A. Miard, A. Lemaitre, M. Patrini, L. C. Andreani, Phys. Rev. B 80, 201308 (2009)
• Nonadiabatic spin-transfer torque in (Ga,Mn)As with perpendicular anisotropy , J.-P. Adam, N. Vernier, J. Ferre, A. Thiaville, V. Jeudy, A. Lemaitre, L. Thevenard, G. Faini, Phys. Rev. B 80, 193204 (2009)
• Field localization and enhancement of phase-locked second- and third-order harmonic generation in absorbing semiconductor cavities , V. Roppo, C. Cojocaru, F. Raineri, G. D'Aguanno, J. Trull, Y. Halioua, R. Raj, I. Sagnes, R. Vilaseca, M. Scalora, Phys. Rev. A 80, 43834 (2009)
• Magnetization-controlled conductance in (Ga,Mn)As-based resonant tunneling devices , M. Tran, J. Peiro, H. Jaffres, J.-M. George, O. Mauguin, L. Largeau, A. Lemaitre, Appl. Phys. Lett. 95, 172101 (2009)
• Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy , H.L. Zhou, T. B. Hoang, D.L. Dheeraj, A.T.J. van Helvoort, L. Liu, J.-C. Harmand, B. O. Fimland, H. Weman, Nanotechnology 20, 415701 (2009)
• Emission of Tamm plasmon/exciton polaritons , C. Symonds, A. Lemaitre, E. Homeyer, J. C. Plenet, J. Bellessa, Appl. Phys. Lett. 95, 151114 (2009)
• Macrospin behavior and superparamagnetism in (Ga,Mn)As nanodots , J.-P. Adam, S. Rohart, J. Ferre, A. Mougin, N. Vernier, L. Thevenard, A. Lemaitre, G. Faini, F. Glas, Phys. Rev. B 80, 155313 (2009)
• Magnetic anisotropy of singly Mn-doped InAs/GaAs quantum dots , O. Krebs, E. Benjamin, A. Lemaitre, Phys. Rev. B 80, 165315 (2009)
• Epitaxial Growth and Picosecond Carrier Dynamics of GaInAs/GaInNAs Superlattices , M. Martin, J. Mangeney, L. Travers, C. Minot, J.-C. Harmand, O. Mauguin, G. Patriarche, Appl. Phys. Lett. 95, 141910 (2009)
• Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems , G. Saint-Girons, J. Cheng, P. Regreny, L. Largeau, G. Patriarche, G. Hollinger, Phys. Rev. B 80, 155308 (2009)
• Unusual domain-wall motion in ferromagnetic semiconductor films with tetragonal anisotropy , C. Gourdon, K. Khazen, V. Jeudy, A. Cebers, A. Dourlat, K. Khazen, A. Lemaitre, Phys. Rev. B 80, 161202 (2009)
• Light transport regimes in slow light photonic crystal waveguides , N. Le Thomas, H. Zhang, J. Jagerska, V. Zabelin, R. Houdre, I. Sagnes, A. Talneau, Phys. Rev. B 80, 125332 (2009)
• Thermo-optical dynamics in an optically pumped Photonic Crystal nano-cavity , M. Brunstein, R. Braive, R. Hostein, A. Beveratos, I. Robert-Philip, I. Sagnes, T. J. Karle, A. Giacomotti, J. A. Levenson, V. Moreau, G. Tessier, Y. De Wilde, Optics Express 17, 17118 (2009)
• Continuous-wave versus time-resolved measurements of Purcell factors for quantum dots in semiconductor microcavities , M. Munsch, A. Mosset, A. Auffeves, S. Seidelin, J.-P. Poizat, J.-M. Gérard, A. Lemaitre, I. Sagnes, P. Senellart, Phys. Rev. B 80, 115312 (2009)
• Surface-plasmon distributed-feedback quantum cascade lasers operating pulsed, room temperature , A. Bousseksou, Y. Chassagneux, J.-R. Coudevylle, R. Colombelli, C. Sirtori, G. Patriarche, G. Beaudoin, I. Sagnes, Appl. Phys. Lett. 95, (2009)
• Controlling the Polarization Eigenstate of a Quantum Dot Exciton with Light , C. Simonneau, T. Belhadj, C.-M. Simon, T. Amand, P. Renucci, B. Chatel, O. Krebs, A. Lemaitre, P. Voisin, X. Marie, B. Urbaszek, Phys. Rev. Lett. 103, 86601 (2009)
• Electronic structure properties of the In(Ga)As/GaAs quantum dot-quantum well tunnel-injection system , G. Sek, J. Andrzejewski, K. Ryczko, P. Poloczek, J. Misiewicz, E. Semenova, A. Lemaitre, G. Patriarche, A. Ramdane, Semicond. Sci. Technol. 24, (2009)
• Spontaneous formation of a polariton condensate in a planar GaAs microcavity , E. Wertz, L. Ferrier, D. Solnyshkov, D. Bajoni, A. Miard, A. Lemaitre, G. Malpuech, J. Bloch, Appl. Phys. Lett. 95, 51108 (2009)
• Terahertz polariton sidebands generated by ultrafast strain pulses in an optical semiconductor microcavity , T. Berstermann, A.V. Scherbakov, A.V. Akimov, D.R. Yakovlev, N.A. Gippius, B. A. Glavin, I. Sagnes, J. Bloch, M. Bayer, Phys. Rev. B 80, (2009)
• Direct observation of the class-B to class-A transition in the dynamical behavior of a semiconductor laser , G. Baili, M. Alouini, T. Malherbe, D. Dolfi, I. Sagnes, F. Bretenaker, Europhys. Lett. 87, 44005 (2009)
• Direct observation of the class-B to class-A transition in the dynamical behavior of a semiconductor laser , G. Baili, M. Alouini, T. Malherbe, D. Dolfi, I. Sagnes, F. Bretenaker, EPL 87, (2009)
• Resonant coupling of quantum dot intersublevel transitions with midinfrared photonic crystal modes , E. Homeyer, J. Houel, X. Checoury, F. Delgehier, S. Sauvage, P. Boucaud, R. Braive, L. Le Gratiet, L. Leroy, A. Miard, A. Lemaitre, I. Sagnes, Appl. Phys. Lett. 95, 41108 (2009)
• Origin of the Optical Emission within the Cavity Mode of Coupled Quantum Dot-Cavity Systems , J. Suffczynski, A. Dousse, K. Gauthron, A. Lemaitre, I. Sagnes, L. Lanco, J. Bloch, P. Voisin, P. Senellart, Phys. Rev. Lett. 103, 27401 (2009)
• Crystal orientation of GaAs islands grown on SrTiO3 (001) by molecular beam epitaxy , L. Largeau, J. Cheng, P. Regreny, G. Patriarche, A. Benamrouche, Y. Robach, M. Gendry, G. Hollinger, G. Saint-Girons, Appl. Phys. Lett. 95, 11907 (2009)
• Giant Rabi splitting between localized mixed plasmon-exciton states in a two-dimensional array of nanosize metallic disks in an organic semiconductor , J. Bellessa, C. Symonds, K. Vynck, A. Lemaitre, A. Brioude, L. Beaur, J. C. Plenet, P. Viste, D. Felbacq, E. Cambril, P. Valvin, Phys. Rev. B 80, 33303 (2009)
• Inductively coupled plasma etching of GaAs suspended photonic crystal cavities , R. Braive, L. Le Gratiet, S. Guilet, G. Patriarche, A. Lemaitre, A. Beveratos, I. Robert-Philip, I. Sagnes, J. Vac. Sci. Technol. B 27, 1909 (2009)
• Twin formation during the growth of InP on SrTiO3 , J. Cheng, L. Largeau, G. Patriarche, P. Regreny, G. Hollinger, G. Saint-Girons, Appl. Phys. Lett. 94, 231902 (2009)
• High power single-frequency continuously-tunable compact extended-cavity semiconductor laser , A. Laurain, M. Myara, G. Beaudoin, I. Sagnes, A. Garnache, Optics Express 17, 9503 (2009)
• Surface-emitting quantum cascade lasers with metallic photonic-crystal resonators , G. Y. Xu, V. Moreau, Y. Chassagneux, A. Bousseksou, R. Colombelli, G. Patriarche, G. Beaudoin, I. Sagnes, Appl. Phys. Lett. 94, (2009)
• A semiconductor laser device for the generation of surface-plasmons upon electrical injection , A. Bousseksou, R. Colombelli, A. Babuty, Y. De Wilde, Y. Chassagneux, C. Sirtori, G. Patriarche, G. Beaudoin, I. Sagnes, Optics Express 17, 9391 (2009)
• Strong Light-Matter Coupling in Subwavelength Metal-Dielectric Microcavities at Terahertz Frequencies , Y. Todorov, A. M. Andrews, I. Sagnes, R. Colombelli, P. Klang, G. Strasser, C. Sirtori, Phys. Rev. Lett. 102, (2009)
• Spectral behavior and dispersionless propagation in Indium Phosphide suspended photonic wires , A. Talneau, K.-H. Lee, I. Sagnes, IEEE Phot. Techn. Lett. 21, 775 (2009)
• Towards a monolithic optical cavity for atom detection and manipulation , S. Gleyzes, A. El Amili, R.A. Cornelussen, P. Lalanne, C.I. Westbrook, A. Aspect, J. Esteve, G. Moreau, A. Martinez, X. Lafosse, L. Ferlazzo, J.-C. Harmand, D. Mailly, A. Ramdane, Eur. Phys. J. D 53, 107 (2009)
• Spectral Behavior and Dispersionless Propagation in Indium Phosphide Suspended Photonic Wires , A. Talneau, K.-H. Lee, I. Sagnes, IEEE Photonics Technol. Lett. 21, 775 (2009)
• Room temperature free carrier tunneling in dilute nitride based quantum well - quantum dot tunnel injection system for 1.3 mu m , W. Rudno-Rudzinski, G. Sek, K. Ryczko, M. Syperek, J. Misiewicz, E. Semenova, A. Lemaitre, A. Ramdane, Appl. Phys. Lett. 94, 171906 (2009)
• Hole-Nuclear Spin Interaction in Quantum Dots , M. Chamarro, B. Eble, C. Testelin, P. Desfonds, F. Bernardot, A. Balocchi, T. Amand, A. Miard, A. Lemaitre, X. Marie, Phys. Rev. Lett. 102, 146601 (2009)
• High speed pulsed electrical spin injection in spin-light emitting diode , V. G. Truong, P.-H. Binh, P. Renucci, M. Tran, Y. Lu, H. Jaffres, J.-M. George, C. Deranlot, A. Lemaitre, T. Amand, X. Marie, Appl. Phys. Lett. 94, 141109 (2009)
• Scalable implementation of strongly coupled cavity-quantum dot devices , A. Dousse, J. Suffczynski, R. Braive, A. Miard, A. Lemaitre, I. Sagnes, L. Lanco, J. Bloch, P. Voisin, P. Senellart, Appl. Phys. Lett. 94, 121102 (2009)
• Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C band , R. Hostein, R. Braive, M. Larque, K.-H. Lee, A. Talneau, L. Le Gratiet, I. Robert-Philip, I. Sagnes, A. Beveratos, Appl. Phys. Lett. 94, 123101 (2009)
• Optimized optical generation and detection of superlattice acoustic phonons , M.F. Pascual-Winter, A. Fainstein, B. Jusserand, B. Perrin, A. Lemaitre, Appl. Phys. Lett. 94, 103103 (2009)
• Confining light flow in weakly coupled waveguide arrays by structuring the coupling constant: towards discrete diffractive optics , N. Belabas, S. Bouchoule, I. Sagnes, J. A. Levenson, C. Minot, J.-M. Moison, Optics Express 17, 3148 (2009)
• Dynamics of band-edge photonic crystal lasers , F. Raineri, A. Giacomotti, T. J. Karle, R. Hostein, R. Braive, A. Beveratos, I. Sagnes, R. Raj, Optics Express 17, 3165 (2009)
• Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates , G. E. Cirlin, V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, Yu. B. Samsonenko, A. D. Bouravleuv, J.-C. Harmand, F. Glas, Phys. Stat. Sol. RRL 3, 112 (2009)
• Polarization controlled nonlinear transmission of light through semiconductor microcavities , M. Vladimirova, S. Cronenberger, D. Scalbert, M. Nawrocki, A. V. Kavokin, A. Miard, A. Lemaitre, J. Bloch, Phys. Rev. B 79, 115325 (2009)
• Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor , X. J. Wang, I. A. Buyanova, F. Zhao, D. Lagarde, A. Balocchi, X. Marie, C. W. Tu, J.-C. Harmand, W.M. Chen, Nature Materials 8, 198 (2009)
• Transient chirp in high-speed photonic-crystal quantum-dot lasers with controlled spontaneous emission , R. Braive, S. Barbay, I. Sagnes, A. Miard, I. Robert-Philip, A. Beveratos, Opt. Lett. 34, 554 (2009)
• Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy , J. Rihani, V. Sallet, N. Yahyaoui, J.-C. Harmand, M. Oueslati, R. Chtourou, J. Lumin. 129, 251 (2009)
• Excitable phase slips in an injection-locked single-mode quantum-dot laser , D.-Y. Cong, B. Kelleher, D. Goulding, S. Hegarty, G. Huyet, D. Cong, A. Martinez, A. Lemaitre, A. Ramdane, M. Fischer, F. Gerschutz, J. Koeth, Opt. Lett. 34, 440 (2009)
• Observation of Long-Lived Polariton States in Semiconductor Microcavities across the Parametric Threshold , D. Ballarini, D. Sanvitto, A. Amo, L. Vina, M. Wouters, I. Carusotto, A. Lemaitre, J. Bloch, Phys. Rev. Lett. 102, 56402 (2009)
• Influence of the surface reconstruction on the growth of InP on SrTiO3(001) , J. Cheng, P. Regreny, L. Largeau, G. Patriarche, O. Mauguin, K. Naji, G. Hollinger, G. Saint-Girons, J. Cryst. Growth 311, 1042 (2009)
• Suppression of nuclear spin diffusion at a GaAs/AlxGa1-xAs interface measured with a single quantum-dot nanoprobe , M. Skolnick, A. E. Nikolaenko, E. A. Chekhovich, M. N. Makhonin, I. W. Drouzas, A. B. Van'kov, J. Skiba-Szymanska, M. S. Skolnick, P. Senellart, D. Martrou, A. Lemaitre, A. I. Tartakovskii, Phys. Rev. B 79, 81303 (2009)
• Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor , M. Tran, H. Jaffres, C. Deranlot, J.-M. George, A. Fert, A. Miard, A. Lemaitre, Phys. Rev. Lett. 102, 36601 (2009)
• Surface morphology and characterization of thin graphene films on SiC vicinal substrate , J. Peneluas, J. Penuelas, A. Ouerghi, D. Lucot, C. David, J. Gierak, H. Estrade-Szwarckopf, C. Andreazza-Vignolle, Phys. Rev. B 79, 33408 (2009)
• Collective fluid dynamics of a polariton condensate in a semiconductor microcavity , A. Amo, D. Sanvitto, F.P. Laussy, D. Ballarini, E. Del Valle, M.D. Martin, A. Lemaitre, J. Bloch, D.N. Krizhanovskii, M. Skolnick, C. Tejedor, L. Vina, Nature 457, 291-U3 (2009)
• Deposition and FIB direct patterning of nanowires and nanorings into suspended sheets of graphene , D. Lucot, J. Gierak, A. Ouerghi, E. Bourhis, G. Faini, D. Mailly, Microelectron. Eng. 86, 882 (2009)
• Lifetime of THz Acoustic Nanocavity Modes , G. Rozas, M.F. Pascual-Winter, B. Jusserand, A. Fainstein, B. Perrin, E. Semenova, A. Lemaitre, Phys. Rev. Lett. 102, 15502 (2009)
• Resonant Raman scattering of nanocavity-confined acoustic phonons , N.D. Lanzillotti-Kimura, A. Fainstein, B. Jusserand, A. Lemaitre, Phys. Rev. B 79, 35404 (2009)
• Electron spin control in dilute nitride semiconductors , F. Zhao, A. Balocchi, G. Truong, T. Amand, X. Marie, X. J. Wang, I. A. Buyanova, W.M. Chen, J.-C. Harmand, J. Phys.: Condens. Matter 21, 174211 (2009)
• Towards a monolithic optical cavity for atom detection and manipulation , S. Gleyzes, A. El Amili, R.A. Cornelussen, P. Lalanne, C.I. Westbrook, A. Aspect, J. Esteve, G. Moreau, A. Martinez, X. Lafosse, L. Ferlazzo, J.-C. Harmand, D. Mailly, A. Ramdane, Eur. Phys. J. D 53, 107 (2009)
• Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires , D.L. Dheeraj, G. Patriarche, H.L. Zhou, J.-C. Harmand, H. Weman, B. O. Fimland, J. Cryst. Growth 311, 1847 (2009)
• Photoluminescence study of nitrogen effects on confined states in GaAs1-xNx/GaAs quantum wells , I. Dhifallah, S. Aloulou, A. Bardaoui, J.-C. Harmand, R. Chtourou, Eur. Phys. J. AP 47, 30302 (2009)
• Tunable doped-fibre vertical cavity surface emitting laser , N. Laurand, S. Calvez, M. D. Dawson, S. Bouchoule, J.-C. Harmand, J. Decobert, Electron. Lett. 45, 887 (2009)
• Orientation dependent emission properties of columnar quantum dash laser structures , S. Hein, P. Podemski, G. Sek, J. Misiewicz, P. Ridha, A. Fiore, G. Patriarche, S. Hofling, A. Forchel, Appl. Phys. Lett. 94, (2009)
• High yield syntheses of reactive fluoride K1-x(Y,Ln)(x)F-1 (+) (2x)nanoparticles , C. Sassoye, G. Patriarche, M. Mortier, Opt. Mat. 31, 1177 (2009)
• Synthesis and optical characterizations of Yb-doped CaF2 ceramics , P. Aubry, A. Bensalah, P. Gredin, G. Patriarche, D. Vivien, M. Mortier, Opt. Mat. 31, 750 (2009)
• Single-frequency external-cavity semiconductor ring-laser gyroscope , A. Mignot, G. Feugnet, S. Schwartz, I. Sagnes, A. Garnache, C. Fabre, J.-P. Pocholle, Opt. Lett. 34, 97 (2009)
• Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy , L. Rigutti, A.D. Bugallo, M. Tchernycheva, G. Jacopin, F.H. Julien, G. E. Cirlin, G. Patriarche, D. Lucot, L. Travers, J.-C. Harmand, JNM 2009, 435451 (2009)
• Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots , V. Preisler, T. Grange, R. Ferreira, L. A. De Vaulchier, Y. Guldner, F.J. Teran, M. Potemski, A. Lemaitre, Eur. Phys. J. B 67, 51 (2009)
• Controlled Light-Matter Coupling for a Single Quantum Dot Embedded in a Pillar Microcavity Using Far-Field Optical Lithography , A. Dousse, L. Lanco, J. Suffczynski, E. Semenova, A. Miard, A. Lemaitre, I. Sagnes, C. Roblin, J. Bloch, P. Senellart, Phys. Rev. Lett. 101, 267404 (2008)
• Optical bistability in a GaAs based polariton diode , D. Bajoni, E. Semenova, A. Lemaitre, S. Bouchoule, E. Wertz, P. Senellart, S. Barbay, R. Kuszelewicz, J. Bloch, Phys. Rev. Lett. 101, 266402 (2008)
• Optical Bistability in a GaAs-Based Polariton Diode , D. Bajoni, E. Semenova, A. Lemaitre, S. Bouchoule, E. Wertz, P. Senellart, S. Barbay, R. Kuszelewicz, J. Bloch, Phys. Rev. Lett. 101, (2008)
• Homoclinic Snaking in a Semiconductor-Based Optical System , S. Barbay, X. Hachair, T. Elsass, I. Sagnes, R. Kuszelewicz, Phys. Rev. Lett. 101, 253902 (2008)
• Ultrafast control of light emission from a quantum-well semiconductor microcavity using picosecond strain pulses , A.V. Scherbakov, R. Besterman, A.V. Akimov, D.R. Yakovlev, G. Beaudoin, D. Bajoni, I. Sagnes, J. Bloch, M. Bayer, Phys. Rev. B 78, 241302 (2008)
• Growth kinetics and crystal structure of semiconductor nanowires , V. G. Dubrovskii, N. V. Sibirev, J.-C. Harmand, F. Glas, Phys. Rev. B 78, 235301 (2008)
• Growth and Characterization of Wurtzite GaAs Nanowires with Defect-Free Zinc Blende GaAsSb Inserts , D.L. Dheeraj, G. Patriarche, H.L. Zhou, T. B. Hoang, A.F. Moses, S. Gronsberg, A.T.J. van Helvoort, B. O. Fimland, H. Weman, Nano Lett. 8, 4459 (2008)
• Subterahertz monochromatic acoustic wave propagation using semiconductor superlattices as transducers , A. Huynh, B. Perrin, N.D. Lanzillotti-Kimura, B. Jusserand, A. Fainstein, A. Lemaitre, Phys. Rev. B 78, 233302 (2008)
• Time resolved nonlinear spectroscopy at the band edge of 1D photonic crystals , M. Astic, P. Delaye, R. Frey, G. Roosen, R. Andre, N. Belabas, I. Sagnes, R. Raj, J. Phys. D 41, 224005 (2008)
• Epitaxial growth of high-kappa oxides on silicon , C. Merckling, G. Saint-Girons, G. Delhaye, G. Patriarche, L. Largeau, V. Favre Nicolin, M. El-Kazzi, P. Regreny, B. Vilquin, O. Marty, C. Botella, M. Gendry, G. Grenet, Y. Robach, G. Hollinger, Thin Solid Films 517, 197 (2008)
• Exciton/plasmon polaritons in GaAs/Al0.93Ga0.07As heterostructures near a metallic layer , J. Bellessa, C. Symonds, C. Meynaud, J. C. Plenet, E. Cambril, A. Miard, L. Ferlazzo, A. Lemaitre, Phys. Rev. B 78, 205326 (2008)
• Anisotropic magnetization relaxation in ferromagnetic Ga1-xMnxAs thin films , K. Khazen, K. Khazen, H. J. von Bardeleben, J. Von Bardeleben, M. Cubukcu, J. L. Cantin, V. Novak, K. Olejnik, M. Cukr, L. Thevenard, A. Lemaitre, Phys. Rev. B 78, 195210 (2008)
• Columnar quantum dashes for an active region in polarization independent semiconductor optical amplifiers at 1.55 mu m , P. Podemski, G. Sck, K. Ryczko, J. Misiewicz, S. Hein, S. Hofling, A. Forchel, G. Patriarche, Appl. Phys. Lett. 93, 171910 (2008)
• Growth-interruption-induced low-density InAs quantum dots on GaAs , L.H. Li, N. Chauvin, G. Patriarche, B. Alloing, A. Fiore, J. Appl. Phys. 104, 83508 (2008)
• MgO thickness dependence of spin injection efficiency in spin-light emitting diodes , Y. Lu, V. G. Truong, P. Renucci, M. Tran, H. Jaffres, C. Deranlot, J.-M. George, A. Lemaitre, Y. Zheng, D. Demaille, P.-H. Binh, T. Amand, X. Marie, Appl. Phys. Lett. 93, 152102 (2008)
• Thermal emission of midinfrared GaAs photonic crystals , E. Homeyer, J. Houel, X. Checoury, G. Fishman, S. Sauvage, P. Boucaud, S. Guilet, R. Braive, A. Miard, A. Lemaitre, I. Sagnes, Phys. Rev. B 78, 165305 (2008)
• Field-driven domain-wall dynamics in (Ga,Mn)As films with perpendicular anisotropy , A. Dourlat, V. Jeudy, A. Lemaitre, C. Gourdon, Phys. Rev. B 78, 161303 (2008)
• Hyperfine interaction in InAs/GaAs self-assembled quantum dots: dynamical nuclear polarization versus spin relaxation , O. Krebs, B. Eble, A. Lemaitre, P. Voisin, B. Urbaszek, T. Amand, X. Marie, C.R. Phys. 9, 874 (2008)
• Optics with single nanowires , V. Zwiller, N. Akopian, M. van Weert, M. van Kouwen, U. Perinetti, L. Kouwenhoven, R. Algra, J.G. Rivas, E. Bakkers, G. Patriarche, L. Liu, J.-C. Harmand, Y. Kobayashi, J. Motohisa, C.R. Phys. 9, 804 (2008)
• Influence of the material parameters on quantum cascade devices , E. Benveniste, A. Vasanelli, A. Delteil, J. Devenson, R. Teissier, A. Baranov, A. M. Andrews, G. Strasser, I. Sagnes, C. Sirtori, Appl. Phys. Lett. 93, 131108 (2008)
• Time-resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window , R. Hostein, A. Michon, G. Beaudoin, N. Gogneau, G. Patriarche, J.-Y. Marzin, I. Robert-Philip, I. Sagnes, A. Beveratos, Appl. Phys. Lett. 93, 73106 (2008)
• Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55 mu m applications: Growth, structural, and optical properties , A. Michon, R. Hostein, G. Patriarche, N. Gogneau, G. Beaudoin, A. Beveratos, I. Robert-Philip, S. Laurent, S. Sauvage, P. Boucaud, I. Sagnes, J. Appl. Phys. 104, 43504 (2008)
• Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III-V/silicon-on-insulator heterogeneous integration , R. Notzel, G. Roelkens, L. Liu, D. Van Thourhout, R. Baets, R. Notzel, F. Raineri, I. Sagnes, G. Beaudoin, R. Raj, J. Appl. Phys. 104, 33117 (2008)
• One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications , N. Gogneau, L. Le Gratiet, E. Cambril, G. Beaudoin, G. Patriarche, A. Beveratos, R. Hostein, I. Robert-Philip, J.-Y. Marzin, I. Sagnes, J. Cryst. Growth 310, 3413 (2008)
• Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers , A. Lemaitre, A. Miard, L. Travers, O. Mauguin, L. Largeau, C. Gourdon, V. Jeudy, M. Tran, J.-M. George, Appl. Phys. Lett. 93, 21123 (2008)
• Evidence of ultra low microwave additive phase noise for an optical RF link based on a class-A semiconductor laser. , G. Baili, M. Alouini, T. Malherbe, D. Dolfi, J.-P. Huignard, T. Merlet, J. Chazelas, I. Sagnes, F. Bretenaker, Optics Express 16, 10091 (2008)
• Anisotropic and Smooth Inductively Coupled Plasma Etching of III-V Laser Waveguides Using HBr-O2 Chemistry [PDF] , S. Bouchoule, S. Azouigui, S. Guilet, G. Patriarche, L. Largeau, A. Martinez, L. Le Gratiet, A. Lemaitre, F. Lelarge, J. Electrochem. Soc. 155, H778 (2008)
• Surface-plasmon distributed-feedback mid-infrared quantum cascade lasers based on hybrid plasmon/air-guided modes , A. Bousseksou, V. Moreau, R. Colombelli, C. Sirtori, G. Patriarche, O. Mauguin, L. Largeau, G. Beaudoin, I. Sagnes, Electron. Lett. 44, 807 (2008)
• Transverse spatial structure of a high Fresnel number Vertical External Cavity Surface Emitting Laser , X. Hachair, S. Barbay, T. Elsass, I. Sagnes, R. Kuszelewicz, Optics Express 16, 9519 (2008)
• Metamorphic approach to single quantum dot emission at 1.55 mu m on GaAs substrate , E. Semenova, R. Hostein, G. Patriarche, O. Mauguin, L. Largeau, I. Robert-Philip, A. Beveratos, A. Lemaitre, J. Appl. Phys. 103, 103533 (2008)
• Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry , M. Lajnef, N. Ben Sedrine, J.-C. Harmand, L. Travers, H. Ezzaouia, R. Chtourou, Eur. Phys. J.-Appl. Phys 42, 99 (2008)
• Ferromagnetic resonance of Ga0.93Mn0.07As thin films with constant Mn and variable free-hole concentrations , K. Khazen, H. J. von Bardeleben, J. Von Bardeleben, J. L. Cantin, L. Thevenard, L. Largeau, O. Mauguin, A. Lemaitre, Phys. Rev. B 77, 165204 (2008)
• Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111) , L. Largeau, D.L. Dheeraj, M. Tchernycheva, G. E. Cirlin, J.-C. Harmand, Nanotechnology 19, 155704 (2008)
• Optical alignment and polarization conversion of the neutral-exciton spin in individual InAs/GaAs quantum dots , K. Kowalik, O. Krebs, A. Lemaitre, J. A. Gaj, P. Voisin, Phys. Rev. B 77, 161305 (2008)
• Scanning tunneling spectroscopy of cleaved InAs/GaAs quantum dots at low temperatures , A. Urbieta, B. Grandidier, J. P. Nys, D. Deresmes, D. Stievenard, A. Lemaitre, G. Patriarche, Y. M. Niquet, Phys. Rev. B 77, 155313 (2008)
• Structure of nanoindentations in heavily n- and p-doped (001) GaAs , E. Le Bourhis, G. Patriarche, Acta Materialia 56, 1417 (2008)
• Optical constants and critical-point parameters of GaAs1-xSbx alloy films grown on GaAs , N. Ben Sedrine, T. Gharbi, J.-C. Harmand, R. Chtourou, Phys. Status Solidi A-Appl. Mat. 205, 833 (2008)
• Observation of many-body Coulomb interaction effects on the photoluminescence spectra of InAs/GaAs quantum dots , J. Rihani, N. Ben Sedrine, V. Sallet, M. Oueslati, R. Chtourou, Appl. Surf. Sci. 254, 3125 (2008)
• Thermal optimization of 1.55 um OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation [PDF] , J.-P. Tourrenc, S. Bouchoule, A. Khadour, J.-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, J.-L. Oudar, Opt. Quant. Electron. 40, 155 (2008)
• Experimental investigation and analytical modeling of excess intensity noise in semiconductor class-A lasers , G. Baili, F. Bretenaker, L. Morvan, D. Dolfi, I. Sagnes, J. Lightwave Technol. 26, 952 (2008)
• Polariton light-emitting diode in a GaAs-based microcavity , D. Bajoni, E. Semenova, A. Lemaitre, S. Bouchoule, E. Wertz, P. Senellart, J. Bloch, Phys. Rev. B 77, (2008)
• Optically-induced ultrafast quenching of the semiconductor quantum well luminescence , A. Amo, D. Ballarini, D. Sanvitto, E. Kozhemyakina, L. Vina, A. Lemaitre, D. Bajoni, J. Bloch, Appl. Phys. Lett. 92, 61912 (2008)
• Efficient coupling to W1 photonic crystal waveguide on InP membrane through suspended access guides , A. Talneau, K.-H. Lee, S. Guilet, I. Sagnes, Appl. Phys. Lett. 92, 61105 (2008)
• Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities , D. Bajoni, P. Senellart, E. Wertz, I. Sagnes, A. Miard, A. Lemaitre, J. Bloch, Phys. Rev. Lett. 100, 47401 (2008)
• De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layer , G. Saint-Girons, I. Sagnes, G. Patriarche, J. Cryst. Growth 310, 536 (2008)
• Self-assembled Ge nanocrystals on BaTiO3/SrTiO3/Si(001) , L. Largeau, G. Patriarche, G. Saint-Girons, G. Delhaye, G. Hollinger, Appl. Phys. Lett. 19, 31904 (2008)
• Polariton light emitting diode in a GaAs based microcavity , D. Bajoni, E. Semenova, A. Lemaitre, S. Bouchoule, E. Wertz, P. Senellart, J. Bloch, Phys. Rev. B 77, 113303 (2008)
• Ultrafast resonant terahertz response of excitons in semiconductor quantum dots , T. Muller, W. Parz, K. Unterrainer, S. Sauvage, J. Houel, P. Boucaud, A. Miard, A. Lemaitre, Phys. Rev. B 77, 35314 (2008)
• Influence of the static atomic displacement on atomic resolution Z-contrast imaging , V. Grillo, E. Carlino, F. Glas, Phys. Rev. B 77, 54103 (2008)
• Zinc blende GaAsSb nanowires grown by molecular beam epitaxy , D.L. Dheeraj, G. Patriarche, L. Largeau, H.L. Zhou, A.T.J. van Helvoort, F. Glas, J.-C. Harmand, B. O. Fimland, H. Weman, Nanotechnology 19, 275605 (2008)
• Nanocolonnes semi-conductrices , J.-C. Harmand, F. Glas, G. Patriarche, M. Tchernycheva, Images de la Physique 2007, 57 (2008)
• Wurtzite to zinc-blende phase transition in GaAs nanowires induced by epitaxial burying , G. Patriarche, F. Glas, M. Tchernycheva, C. Sartel, L. Largeau, J.-C. Harmand, G. E. Cirlin, Nano Lett. 8, 1638 (2008)
• Photoluminescence from a single InGaAs epitaxial quantum rod , G. Sek, P. Podemski, J. Misiewicz, L.H. Li, A. Fiore, G. Patriarche, Appl. Phys. Lett. 92, 21901 (2008)
• Shape-engineered epitaxial InGaAs quantum rods for laser applications , L.H. Li, P. Ridha, G. Patriarche, N. Chauvin, A. Fiore, Appl. Phys. Lett. 92, 121102 (2008)
• Spontaneous compliance of the InP/SrTiO3 heterointerface , G. Saint-Girons, C. Priester, P. Regreny, G. Patriarche, L. Largeau, V. Favre Nicolin, G. Y. Xu, Y. Robach, M. Gendry, G. Hollinger, Appl. Phys. Lett. 92, 241907 (2008)
• Directional growth of Ge on GaAs at 175 degrees C using plasma-generated nanocrystals , E.V. Johnson, G. Patriarche, P. Roca i Cabarrocas, Appl. Phys. Lett. 92, 103108 (2008)
• Shape modification of III-V nanowires: The role of nucleation on sidewalls , V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, M. Tchernycheva, J.-C. Harmand, V. Ustinov, Phys. Rev. E 77, 31606 (2008)
• Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry , M. Lajnef, N. Ben Sedrine, J.-C. Harmand, L. Travers, H. Ezzaouia, R. Chtourou, Eur. Phys. J. AP 2, 99 (2008)
• Optical constants and critical-point parameters of GaAs1-xSbx alloy films grown on GaAs , N. Ben Sedrine, T. Gharbi, J.-C. Harmand, R. Chtourou, Phys. Stat. Sol. (a) 4, 833 (2008)
• STM Images of Subsurface Mn Atoms in GaAs: Evidence of Hybridization of Surface and Impurity States , J.-M. Jancu, J.-C. Girard, A. Lemaitre, F. Glas, Z.-Z. Wang, P. Voisin, Phys. Rev. Lett. 101, 196801 (2008)
• Modulated contrast and associated diffracted intensity of GaPySb1-y layers grown using organometallic vapor phase epitaxy , T.-Y. Seong, G. R. Booker, A. G. Norman, F. Glas, G. B. Stringfellow, JKPS 52, 471 (2008)
• Spatial correlation between Bi atoms in dilute GaAs1-xBix: from random distribution to Bi pairing and clustering , G. Ciatto, E. C. Young, F. Glas, J. Chen, R. Alonso Mori, T. Tiedje, Phys. Rev. B 78, 35325 (2008)
• A simple calculation of energy changes upon stacking fault formation or local crystalline phase transition in semiconductors , F. Glas, J. Appl. Phys. 104, 93520 (2008)
• Competition between InP and In2O3 islands during the growth of InP on SrTiO3 , G. Saint-Girons, P. Regreny, J. Cheng, G. Patriarche, L. Largeau, M. Gendry, G. Y. Xu, Y. Robach, C. Botella, G. Grenet, G. Hollinger, J. Appl. Phys. 104, 33509 (2008)
• Preparation and up-conversion luminescence of 8 nm rare-earth doped fluoride nanoparticles , V. K. Tikhomirov, M. Mortier, P. Gredin, G. Patriarche, C. Gorller-Walrand, V. V. Moshchalkov, Optics Express 16, 14544 (2008)
• Heterostructure formation in nanowhiskers via diffusion mechanism , M. V. Nazarenko, N. V. Sibirev, G. E. Cirlin, G. Patriarche, J.-C. Harmand, V. G. Dubrovskii, Technical Phys. Lett. 34, 750 (2008)
• Controlling the aspect ratio of quantum dots: From columnar dots to quantum dots , L. Li, G. Patriarche, N. Chauvin, P. Ridha, M. Rossetti, J. Andrzejewski, G. Sek, J. Misiewicz, A. Fiore, IEEE J. Quant. Electron. 14, 1204 (2008)
• Optical properties of GaInNAsSb/GaAs/GaAs1-xNx (x approximate to 10%)saturable absorber quantum wells , S. Ben Bouzid, W. Zaghdoudi, A. Hamdouni, N. Ben Sedrine, F. Bousbih, J.-C. Harmand, R. Chtourou, Appl. Surf. Sci. 254, 7122 (2008)
• Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM , N.K. Metzger, C. G. Leburn, A. A. Lagatsky, C. T. A Brown, S. Calvez, D. Burns, H. D. Sun, M. D. Dawson, M. Le Du, J.-C. Harmand, W. Sibbett, Optics Express 16, 18739 (2008)
• Optics with single nanowires , V. Zwiller, N. Akopian, M. van Weert, M. van Kouwen, U. Perinetti, L. Kouwenhoven, R. Algra, J.G. Rivas, E. Bakkers, G. Patriarche, L. Liu, J.-C. Harmand, Y. Kobayashi, J. Motohisa, C. R. Acad. Sci. Phys. 9, 804 (2008)
• Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy , G. E. Cirlin, N. V. Sibirev, C. Sartel, J.-C. Harmand, Semicond. 42, 710 (2008)
• Epitaxial growth of quantum rods with high aspect ratio and compositional contrast , L.H. Li, G. Patriarche, A. Fiore, J. Appl. Phys. 104, 113522 (2008)
• In situ generation of indium catalysts to grow crystalline silicon nanowires at low temperature on ITO , P.J. Alet, P. Maletinsky, L. Yu, G. Patriarche, S. Palacin, P. Roca i Cabarrocas, J. Mater. Chem. 18, 5187 (2008)
• Antimony incorporation in InAs quantum dots grown on GaAs substrate by molecular beam epitaxy , J. Rihani, V. Sallet, M. Oueslati, R. Chtourou, Physica E 40, 550 (2008)
• Large intrinsic birefringence in zinc-blende-based artificial semiconductors , J.-M. Jancu, J.-C. Harmand, G. Patriarche, A. Talneau, K. Gauthron, F. Glas, P. Voisin, C.R. Phys. 8, 1174 (2007)
• Optically probing the fine structure of a single Mn atom in an InAs quantum dot , A. Kudelski, A. Lemaitre, A. Miard, P. Voisin, T.C.M. Graham, R.J. Warburton, O. Krebs, Phys. Rev. Lett. 99, 247209 (2007)
• Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers , G. Saint-Girons, P. Regreny, L. Largeau, G. Patriarche, G. Hollinger, Appl. Phys. Lett. 91, 241912 (2007)
• Determination of the micromagnetic parameters in (Ga,Mn)As using domain theory , C. Gourdon, A. Dourlat, V. Jeudy, K. Khazen, J. Von Bardeleben, L. Thevenard, A. Lemaitre, Phys. Rev. Lett. 76, 241301 (2007)
• Temperature-dependent photoluminescence spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs single quantum wells under different excitation intensities , S. D. A Lourenco, I.F.L. Dias, J.L. Duarte, E. Laureto, V. M. Aquino, J.-C. Harmand, Brazil. J. Phys. 37, 1212 (2007)
• Purcell Enhancement of Spontaneous Emission from Quantum Cascades inside Mirror-Grating Metal Cavities at THz Frequencies , Y. Todorov, I. Sagnes, I. Abram, C. Minot, Phys. Rev. Lett. 99, 223603 (2007)
• Ultraweak-Absorption Microscopy of a Single Semiconductor Quantum Dot in the Midinfrared Range , J. Houel, S. Sauvage, P. Boucaud, A. Dazzy, R. Prazeres, F. Glotin, J.-M. Ortega, A. Miard, A. Lemaitre, Phys. Rev. Lett. 99, 217404 (2007)
• Coherent Generation of Acoustic Phonons in an Optical Microcavity , N.D. Lanzillotti-Kimura, A. Fainstein, A. Huynh, B. Perrin, B. Jusserand, A. Miard, A. Lemaitre, Phys. Rev. Lett. 99, 217405 (2007)
• Photon lasing in a GaAs microcavity: similarities with a polariton condensate , D. Bajoni, P. Senellart, A. Lemaitre, J. Bloch, Phys. Rev. B 76, 201305(R) (2007)
• Polarization dependence study of electroluminescence and absorption from InAs/GaAs columnar quantum dots , P. Ridha, L. Li, A. Fiore, G. Patriarche, M. Mexis, P. M. Smowton, Appl. Phys. Lett. 91, 191123 (2007)
• Efficient dynamical nuclear polarization in quantum dots: Temperature dependence , B. Urbaszek, P.-F. Braun, T. Amand, O. Krebs, M. Belhaj, A. Lemaitre, P. Voisin, X. Marie, Phys. Rev. B 76, 201301 (2007)
• Acoustic phonon nanowave devices based on aperiodic multilayers: Experiments and theory , N.D. Lanzillotti-Kimura, A. Fainstein, B. Jusserand, A. Lemaitre, O. Mauguin, L. Largeau, Phys. Rev. B 76, 174301 (2007)
• Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis , M. Tchernycheva, L. Travers, G. Patriarche, F. Glas, J.-C. Harmand, G. E. Cirlin, V. G. Dubrovskii, J. Appl. Phys. 102, 94313 (2007)
• Monitoring electrically driven cancellation of exciton fine structure in a semiconductor quantum dot by optical orientation , K. Kowalik, O. Krebs, A. Lemaitre, B. Eble, A. Kudelski, P. Voisin, S. Seidl, J. A. Gaj, Appl. Phys. Lett. 91, 183104 (2007)
• Spin-polarized tunneling as a probe of the electronic properties of Ga1-xMnxAs heterostructures , M. Elsen, H. Jaffres, R. Mattana, L. Thevenard, A. Lemaitre, J.-M. George, Phys. Rev. B 76, 144415 (2007)
• Highly directional radiation pattern of microdisk cavities , E. Peter, A. Dousse, P. Voisin, A. Lemaitre, D. Martrou, A. Cavanna, J. Bloch, P. Senellart, Appl. Phys. Lett. 91, 151103 (2007)
• Magnetic patterning of (Ga,Mn)As by hydrogen passivation , L. Thevenard, A. Miard, L. Vila, G. Faini, A. Lemaitre, N. Vernier, J. Ferre, S. Fusil, Appl. Phys. Lett. 91, 142511 (2007)
• Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization , M. Tchernycheva, C. Sartel, G. E. Cirlin, L. Travers, G. Patriarche, J.-C. Harmand, D. Le Si Dang, J. Renard, B. Gayral, L. Nevou, F. Julien, Nanotechnology 18, 385306 (2007)
• Exchange-Mediated Anisotropy of (Ga,Mn)As Valence-Band Probed by Resonant Tunneling Spectroscopy , M. Elsen, H. Jaffres, R. Mattana, M. Tran, J.-M. George, A. Miard, A. Lemaitre, Phys. Rev. Lett. 99, 127203 (2007)
• Study of radial growth rate and size control of silicon nanocrystals in square-wave-modulated silane plasmas , T. Nguyen-Tran, P. Roca i Cabarrocas, G. Patriarche, Appl. Phys. Lett. 91, 111501 (2007)
• Density of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth rates , A. Michon, G. Patriarche, G. Beaudoin, G. Saint-Girons, N. Gogneau, I. Sagnes, Appl. Phys. Lett. 91, 102107 (2007)
• Growth and characterization of InAs columnar quantum dots on GaAs substrate , L.H. Li, G. Patriarche, M. Rossetti, A. Fiore, J. Appl. Phys. 102, 33502 (2007)
• Combined raman study of InGaAsN from the N-impurity and InGaAs-matrix sides , A. Chafi, O. Pages, A. V. Postnikov, J. Gleize, V. Sallet, E. Rzepka, L.H. Li, B. Jusserand, J.-C. Harmand, Appl. Phys. Lett. 91, 51910 (2007)
• Domain structure and magnetic anisotropy fluctuations in (Ga,Mn)As: Effect of annealing , A. Dourlat, V. Jeudy, C. Testelin, F. Bernardot, K. Khazen, C. Gourdon, L. Thevenard, L. Largeau, O. Mauguin, A. Lemaitre, J. Appl. Phys. 102, 23913 (2007)
• Growth of crystalline gamma-Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation , C. Merckling, M. El-Kazzi, G. Saint-Girons, G. Hollinger, L. Largeau, G. Patriarche, V. Favre Nicolin, O. Marty, J. Appl. Phys. 102, 24101 (2007)
• High power single-longitudinal-mode OP-VECSEL at 1.55 mu m with hybrid metal-metamorphic Bragg mirror [PDF] , J.-P. Tourrenc, S. Bouchoule, A. Khadour, J. Decobert, A. Miard, J.-C. Harmand, J.-L. Oudar, Electron. Lett. 43, 754 (2007)
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• Local electronic transport through InAs/InP(001) quantum dots capped with a thin InP layer studied by an AFM conductive probe , M. Troyon, K. Smaali, M. Molinari, A. El Hdiy, G. Saint-Girons, G. Patriarche, Semicond. Sci. Technol. 22, 755 (2007)
• Spin lifetime from the Hanle effect and fine structure of excitonic levels in InAlAs/AlGaAs quantum dots , A. Sahli, A. Melliti, M. A. Maaref, C. Testelin, A. Lemaitre, R. Kuszelewicz, P. Voisin, Phys. Stat. Sol. (b) 244, 2622 (2007)
• Anisotropic spin splitting of the electron ground state in InAs quantum dots , E. Aubry, C. Testelin, F. Bernardot, A. Lemaitre, Appl. Phys. Lett. 90, 242113 (2007)
• Continuous-wave operation of photonic band-edge laser near 1.55 mu m on silicon wafer , G. Vecchi, F. Raineri, I. Sagnes, A. Giacomotti, P. Monnier, T. J. Karle, K.-H. Lee, R. Braive, L. Le Gratiet, S. Guilet, G. Beaudoin, A. Talneau, S. Bouchoule, J. A. Levenson, R. Raj, Optics Express 15, 7551 (2007)
• Redistribution of nitrogen localized states in GaAsN layer doped Silicon , A. Hamdouni, N. Ben Sedrine, J.-C. Harmand, R. Chtourou, Eur. Phys. J. AP 38, 221 (2007)
• Dependence of magnetic anisotropies and critical temperatures on the hole concentration in ferromagnetic GaMnAs thin films , K. Khazen, H. J. von Bardeleben, J. L. Cantin, L. Thevenard, L. Largeau, O. Mauguin, A. Lemaitre, IEEE Trans. Magn. 43, 3028 (2007)
• Continuous-wave 1.55 µm diode-pumped surface emitting semiconductor laser for broadband multiplex spectroscopy , M. Jacquemet, N. Picque, G. Guelachvili, A. Garnache, I. Sagnes, M. Strassner, C. Symonds, Opt. Lett. 32, 1387 (2007)
• Fast radiative quantum dots: From single to multiple photon emission , E. Peter, S. Laurent, J. Bloch, J. Hours, S. Varoutsis, I. Robert-Philip, A. Beveratos, A. Lemaitre, A. Cavanna, G. Patriarche, P. Senellart, D. Martrou, Appl. Phys. Lett. 90, 223118 (2007)
• Growth and characterization of InP nanowires with InAsP insertions , M. Tchernycheva, G. E. Cirlin, G. Patriarche, L. Travers, V. Zwiller, U. Perinetti, J.-C. Harmand, Nano Lett. 7, 1500 (2007)
• Evolution of the magnetic anisotropy with carrier density in hydrogenated Ga1-xMnxAs , L. Thevenard, L. Largeau, O. Mauguin, A. Lemaitre, K. Khazen, J. Von Bardeleben, Phys. Rev. B 75, 195218 (2007)
• Optical and electronic properties of GaAs-based structures with columnar quantum dots , M. Motyka, G. Sek, K. Ryczko, J. Andrzejewski, J. Misiewicz, L.H. Li, A. Fiore, G. Patriarche, Appl. Phys. Lett. 90, 181933 (2007)
• Synthesis of silicon nanocrystals in silane plasmas for nanoelectronics and large area electronic devices , P. Roca i Cabarrocas, T. Nguyen-Tran, Y. Djeridane, A. Abramov, E. Johnson, G. Patriarche, J. Phys. D 40, 2258 (2007)
• Nonresonant Electrical Injection of Excitons in an InGaAs Quantum Well , D. Bajoni, A. Miard, A. Lemaitre, S. Bouchoule, J. Bloch, J. Tignon, Appl. Phys. Lett. 90, 121114 (2007)
• Photonic-crystal surface-emitting laser near 1.55 micron on gold-coated silicon wafer , G. Vecchi, F. Raineri, I. Sagnes, K.-H. Lee, S. Guilet, L. Le Gratiet, F. Van Laere, G. Roelkens, D. Van Thourhout, R. Bats, J. A. Levenson, R. Raj, Electron. Lett. 43, 343 (2007)
• Wetting layer states of InAs/GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer , G. Sek, K. Ryczko, M. Motyka, J. Andrzejewski, K. Wysocka, J. Misiewicz, L.H. Li, A. Fiore, G. Patriarche, J. Appl. Phys. 101, 63539 (2007)
• Semiconductor heterostructures for spintronics and quantum information , J. A. Gaj, J. Cibert, A. Golnik, M. Goryca, E. Janik, T. Kazimierczuk, L. Klopotowski, P. Kossacki, J. Kossut, K. Kowalik, O. Krebs, A. Lemaitre, S. Mackowski, W. Maslana, M. Nawrocki, P. Plochocka, B. Piechal, P. Senellart, J. Suffczynski, S. Tatarenko, A. Trajnerowicz, P. Voisin, C. R. Acad. Sci. Phys. 8, 243 (2007)
• Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice , E.M. Lopes, J.L. Duarte, I.F.L. Dias, L. C. Pocas, E. Laureto, J.-C. Harmand, J. Phys.: Condens. Matter 19, (2007)
• Submicron-diameter semiconductor pillar microcavities with very high quality factors , G. Lecamp, J.-P. Hugonin, P. Lalanne, R. Braive, S. Varoutsis, S. Laurent, A. Lemaitre, I. Sagnes, G. Patriarche, I. Robert-Philip, I. Abram, Appl. Phys. Lett. 90, 91120 (2007)
• Optimisation of alpha-factor for quantum dot InAs/GaAs Fabry-Perot lasers emitting at 1.3 ?m , D.-Y. Cong, A. Martinez, K. Merghem, G. Moreau, A. Lemaitre, J.-G. Provost, O. Le Gouezigou, M. Fischer, I. Krestnikov, A. R. Kovsh, A. Ramdane, Electron. Lett. 43, 222 (2007)
• Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling , M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, A. Garnache, Appl. Phys. B 86, 503 (2007)
• Polariton parametric luminescence in a single micropillar , D. Bajoni, E. Peter, P. Senellart, J.-L. Smirr, I. Sagnes, A. Lemaitre, J. Bloch, Appl. Phys. Lett. 90, 51107 (2007)
• InGaAs/GaAs QD-based electro-optic modulator with over 100 nm bandwidth at 1.55 mu m , G. Moreau, A. Martinez, D.-Y. Cong, K. Merghem, A. Miard, A. Lemaitre, P. Voisin, A. Ramdane, Electron. Lett. 43, 124 (2007)
• Structural and optical properties of low-density and In-rich InAs/GaAs quantum dots , B. Alloing, C. Zinoni, L.H. Li, A. Fiore, G. Patriarche, J. Appl. Phys. 101, 24918 (2007)
• Universal conductance fluctuations in epitaxial GaMnAs ferromagnets: dephasing by structural and spin disorder , L. Vila, R. Giraud, L. Thevenard, A. Lemaitre, F. Pierre, J. Dufouleur, D. Mailly, B. Barbara, G. Faini, Phys. Rev. Lett. 98, 27204 (2007)
• Why does wurtzite form in nanowires of III-V zinc-blende semiconductors , F. Glas, J.-C. Harmand, G. Patriarche, Phys. Rev. Lett. 99, 146101 (2007)
• Anions relative location in the group-V sublattice of GaAsSbN/GaAs epilayers: XAFS measurements and simulations , G. Ciatto, J.-C. Harmand, F. Glas, L. Largeau, M. Le Du, F. Boscherini, M. Malvestuto, L. Floreano, P. Glatzel, R. Alonso Mori, Phys. Rev. B 75, 245212 (2007)
• Shot-noise-limited operation of a monomode high-cavity-finesse semiconductor laser for microwave photonics applications , G. Baili, M. Alouini, D. Dolfi, F. Bretenaker, I. Sagnes, A. Garnache, Optics Express 32, 650 (2007)
• High contrast reflection modulation near 1.55 mu m in InP 2D photonic crystals on silicon wafer , G. Vecchi, F. Raineri, I. Sagnes, K.-H. Lee, S. Guilet, L. Le Gratiet, A. Talneau, J. A. Levenson, R. Raj, F. Van Laere, G. Roelkens, D. Van Thourhout, R. Bats, Optics Express 15, 1254 (2007)
• TEM-nanoindentation studies of semiconducting structures , E. Le Bourhis, G. Patriarche, Micron 38, 377 (2007)
• Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001) , G. Delhaye, C. Merckling, M. El-Kazzi, G. Saint-Girons, M. Gendry, Y. Robach, G. Hollinger, L. Largeau, G. Patriarche, J. Appl. Phys. 100, 124109 (2006)
• Pseudomorphic molecular beam epitaxy growth of gamma-Al2O3(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy , C. Merckling, M. El-Kazzi, G. Delhaye, M. Gendry, G. Saint-Girons, G. Hollinger, L. Largeau, G. Patriarche, Appl. Phys. Lett. 89, 232907 (2006)
• Thermodynamic description of the competition between quantum dots and quantum dashes during metalorganic vapor phase epitaxy in the InAs/InP(001) system: Experiment and theory , G. Saint-Girons, A. Michon, I. Sagnes, G. Beaudoin, G. Patriarche, Phys. Rev. B 74, 245305 (2006)
• Fabrication and characterization of 1.55 mu m single transverse mode large diameter electrically pumped VECSEL [PDF] , A. Bousseksou, S. Bouchoule, M. El Kurdi, M. Strassner, I. Sagnes, P. Crozat, J. Jacquet, Opt. Quant. Electron. 38, 1269 (2006)
• Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP , D.O. Toginho Filho, I.F.L. Dias, J.L. Duarte, E. Laureto, J.-C. Harmand, Brazil. J. Phys. 36, 1250 (2006)
• Charge-controlled nuclear polarization of a single InAs/GaAs quantum dot under optical pumping , B. Eble, O. Krebs, A. Lemaitre, K. Kowalik, A. Kudelski, B. Urbaszek, T. Amand, X. Marie, P. Voisin, Phys. Stat. Sol. (c) 3, 3752 (2006)
• Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001) , E. Dupuy, P. Regreny, Y. Robach, M. Gendry, N. Chauvin, E. Tranvouez, G. Bremond, C. Bru-Chevallier, G. Patriarche, Appl. Phys. Lett. 89, 123112 (2006)
• The effect of potential fluctuations on the optical properties of InGaAs/InGaAlAs single and coupled double quantum wells , L. C. Pocas, J.L. Duarte, E.M. Lopes, I.F.L. Dias, E. Laureto, D.F. Cesar, J.-C. Harmand, J. Appl. Phys. 100, 53519 (2006)
• Subterahertz Phonon Dynamics in Acoustic Nanocavities , A. Huynh, N.D. Lanzillotti-Kimura, B. Jusserand, B. Perrin, A. Fainstein, M.F. Pascual-Winter, E. Peronne, A. Lemaitre, Phys. Rev. Lett. 97, 115502 (2006)
• Imaging the electric properties of InAs/InP(001) quantum dots capped with a thin InP layer by conductive atomic force microscopy: Evidence of memory effect , K. Smaali, M. Troyon, A. El Hdiy, M. Molinari, G. Saint-Girons, G. Patriarche, Appl. Phys. Lett. 89, 112115 (2006)
• Enhanced kinetics of Al0.97Ga0.03As wet oxidation through the use of hydrogenation , M. Le Du, I. Sagnes, G. Beaudoin, L. Travers, J.-C. Esnault, J.-C. Harmand, Appl. Phys. Lett. 89, 111105 (2006)
• Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires , F. Glas, Phys. Rev. B 74, 121302 (2006)
• Indentation behaviour of (011) thin films of III-V semiconductors: polarity effect differences between GaAs and InP , L. Largeau, G. Patriarche, E. Le Bourhis, J. P. Riviere, Int. J. Mat. Res. 97, 1230 (2006)
• Oxide glass used as inorganic template for fluorescent fluoride nanoparticles synthesis , M. Mortier, G. Patriarche, Opt. Mat. 28, 1401 (2006)
• The role of surface diffusion of adatoms in the formation of nanowire crystals , V. G. Dubrovskii, N. V. Sibirev, RA Suris, G. E. Cirlin, V.M. Ustinov, M. Tchernycheva, J.-C. Harmand, Semicond. 40, 1075 (2006)
• Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors , M. Le Du, D. Massoubre, J.-C. Harmand, J.-L. Oudar, Electron. Lett. 42, 1060 (2006)
• Strong linear polarization induced by a longitudinal magnetic field in II-VI semimagnetic semiconductor layers , A. Kudelski, J. Kasprzak, K. Kowalik, A. Golnik, J. A. Gaj, G. Cywinski, O. Krebs, G. Patriarche, P. Voisin, Phys. Rev. B 74, 73308 (2006)
• Optical self-organization and cavity solitons in optically pumped semiconductor microresonators , Y. Menesguen, S. Barbay, X. Hachair, L. Leroy, I. Sagnes, R. Kuszelewicz, Phys. Rev. A 74, 23818 (2006)
• Dynamic nuclear polarization of a single charge-tunable InAs/GaAs quantum dot , B. Eble, O. Krebs, A. Lemaitre, K. Kowalik, A. Kudelski, P. Voisin, B. Urbaszek, X. Marie, T. Amand, Phys. Rev. B 74, R081306 (2006)
• Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials , P. Cheyssac, M. Sacilotti, G. Patriarche, J. Appl. Phys. 100, 44315 (2006)
• Elastic behavior of polycrystalline thin films inferred from /in situ /micromechanical testing and modeling , D. Faurie, P.-O. Renault, E. Le Bourhis, P. Goudeau, O. Castelnau, R. Brenner, G. Patriarche, Appl. Phys. Lett. 89, 61911 (2006)
• Effect of cap-layer growth rate on morphology and luminescence of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxy , A. Michon, I. Sagnes, G. Patriarche, G. Beaudoin, M.-N. Merat-Combes, G. Saint-Girons, J. Appl. Phys. 100, 33508 (2006)
• Synthesis and optical characterizations of undoped and rare-earth-doped CaF2 nanoparticles , A. Bensalah, M. Mortier, G. Patriarche, P. Gredin, D. Vivien, J. Solid State Chem. 179, 2636 (2006)
• Initial stage of the overgrowth of InP on InAs/InP(001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edges , G. Saint-Girons, G. Patriarche, A. Michon, G. Beaudoin, I. Sagnes, K. Smaali, M. Troyon, Appl. Phys. Lett. 89, 31923 (2006)
• Temperatures conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy , M. Tchernycheva, J.-C. Harmand, G. Patriarche, L. Travers, G. E. Cirlin, Nanotechnology 17, 4025 (2006)
• Synthesis of fluoride nanoparticles in non-aqueous nanoreactors. Luminescence study of Eu3+: CaF2 , J. Labeguerie, P. Gredin, M. Mortier, G. Patriarche, A. De Kozak, Z. Anorg. Allg. Chem. 632, 1538 (2006)
• Clustering in GaAsSbN alloys as a possible origin of their atypical optical behavior: a Sb K-edge X-ray absorption study , G. Ciatto, J.-C. Harmand, L. Largeau, F. Glas, Phys. Stat. Sol. (c) 3, 1931 (2006)
• Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy , L. Thevenard, L. Largeau, O. Mauguin, G. Patriarche, A. Lemaitre, N. Vernier, J. Ferre, Phys. Rev. B 73, 195331 (2006)
• Dynamics of microcavity polaritons in the presence of an electron gas , D. Bajoni, M. Perrin, P. Senellart, A. Lemaitre, B. Sermage, J. Bloch, Phys. Rev. B 73, 205344 (2006)
• Quantum-well saturable absorber at 1.55 mu m on GaAs substrate with a fast recombination rate , M. Le Du, J.-C. Harmand, O. Mauguin, L. Largeau, L. Travers, J.-L. Oudar, Appl. Phys. Lett. 88, 201110 (2006)
• Incoherent and coherent writing and erasure of cavity solitons in an optically pumped semiconductor amplifier , S. Barbay, Y. Menesguen, X. Hachair, L. Leroy, I. Sagnes, R. Kuszelewicz, Opt. Lett. 31, 1504 (2006)
• Thermodynamical analysis of the shape and size dispersion of InAs/InP(001) quantum dots , A. Michon, I. Sagnes, G. Patriarche, G. Beaudoin, M.-N. Merat-Combes, G. Saint-Girons, Phys. Rev. B 73, 165321 (2006)
• Calculation of the temperature profile in nanowhiskers growing on a hot substrate , F. Glas, J.-C. Harmand, Phys. Rev. B 73, 155320 (2006)
• Highly selective and compact tunable MOEMS photonic crystal Fabry-Perot filter , S. Boutami, B. Ben Bakir, J. L. Leclercq, X. Letartre, R. Rojo, M. Garrigues, P. Viktorovitch, I. Sagnes, L. Le Gratiet, M. Strassner, Optics Express 14, 3129 (2006)
• Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE , V. Sallet, G. Patriarche, M.-N. Merat-Combes, L. Largeau, O. Mauguin, L. Travers, J. Cryst. Growth 280, 80 (2006)
• Parametric oscillation in vertical triple microcavities , C. Diederichs, J. Tignon, G. Dasbach, C. Ciuti, A. Lemaitre, J. Bloch, P. Roussignol, C. Delalande, Nature 440, 904 (2006)
• Infrared emission enhancement in Yb/Er/Ce-codoped glass-ceramics , G. Dantelle, M. Mortier, D. Vivien, G. Patriarche, Eur. J. Glass Sci. Tech. B 47, 150 (2006)
• Er3+-doped PbF2: Comparison between nanocrystals in glass-ceramics and bulk single crystals , G. Dantelle, M. Mortier, G. Patriarche, D. Vivien, J. Solid State Chem. 179, 1995 (2006)
• Microphotoluminescence of exciton and biexciton around 1.5 mu m from a single InAs/InP(001) quantum dot , G. Saint-Girons, N. Chauvin, A. Michon, G. Patriarche, G. Beaudoin, B. Bremond, C. Bru-Chevallier, I. Sagnes, Appl. Phys. Lett. 88, 133101 (2006)
• Exploration of the ultimate patterning potential of focused ion beams , J. Gierak, E. Bourhis, A. Madouri, M. Strassner, I. Sagnes, S. Bouchoule, M.-N. Merat-Combes, D. Mailly, P. Hawkes, R. Jede, L. Bardotti, B. Prevel, A. Hannour, P. Melinon, A. Perez, J. Ferre, J. P. Jamet, A. Mougin, C. Chappert, V. Mathet, J. Microlith., Microfab., Microsyst. 5, 11011 (2006)
• Neutral and charged multi-exciton complexes in single InAs quantum dots grown on InP(001) , N. Chauvin, E. Tranvouez, B. Bremond, G. Guillot, C. Bru-Chevallier, E. Dupuy, P. Regreny, M. Gendry, G. Patriarche, Nanotechnology 17, 1831 (2006)
• Optimization and characterization of InGaAsN/GaAs quantum-well ridge diodes for high frequency operation , S. Bonnefont, B. Messant, M. Boutillier, O. Gauthier-Lafaye, F. Lozes, A. Martinez, V. Sallet, K. Merghem, L. Ferlazzo, J.-C. Harmand, A. Ramdane, J.-G. Provost, B. Dagens, L. Le Gouezigou, J. Landreau, X. Marie, Opt. Quant. Electron. 38, 313 (2006)
• Nanowave devices for terahertz acoustic phonons , N.D. Lanzillotti-Kimura, A. Fainstein, A. Lemaitre, B. Jusserand, Appl. Phys. Lett. 88, 83113 (2006)
• Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy , V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, J.-C. Harmand, V. Ustinov, Phys. Rev. E 73, 21603 (2006)
• Evidence for excitonic polarons in InAs/GaAs quantum dots , V. Preisler, T. Grange, R. Ferreira, L. A. De Vaulchier, Y. Guldner, F.J. Teran, M. Potemski, A. Lemaitre, Phys. Rev. B 73, 75320 (2006)
• Nanoepitaxy of InAs/InP quantum dots by metalorganic vapor phase epitaxy for 1.55 mu m emitters , J.-M. Benoit, L. Le Gratiet, G. Beaudoin, A. Michon, G. Saint-Girons, R. Kuszelewicz, I. Sagnes, Appl. Phys. Lett. 88, 41113 (2006)
• Indium incorporation in In-rich InxGa1-xAs/GaAs layers grown by low-pressure metalorganic vapor-phase epitaxy and its influence on the growth of self-assembled quantum dots , G. Saint-Girons, I. Sagnes, G. Patriarche, Phys. Rev. B 73, 45308 (2006)
• Spin transfer experiments on (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As tunnel junctions , M. Elsen, O. Boulle, J.-M. George, H. Jaffres, R. Mattana, V. Cros, A. Fert, A. Lemaitre, R. Giraud, G. Faini, Phys. Rev. B 73, 353303 (2006)
• 1.43 mu m InAs bilayer quantum dot lasers on GaAs substrate , L.H. Li, M. Rossetti, A. Fiore, G. Patriarche, Electron. Lett. 42, 638 (2006)
• Bistability of the nuclear polarization created through optical pumping in In1−xGaxAs quantum dots , P.-F. Braun, B. Urbaszek, T. Amand, X. Marie, O. Krebs, B. Eble, A. Lemaitre, P. Voisin, Phys. Rev. B 74, 245306 (2006)
• Scaling of the switching energy in microcavity saturable absorber devices , D. Massoubre, J.-L. Oudar, J. Dion, J.-C. Harmand, A. Shen, J. Landreau, J. Decobert, Appl. Phys. Lett. 88, 153513 (2006)
• InAs/InP(001) quantum dots emitting at 1.55 mu m grown by low-pressure metalorganic vapor-phase epitaxy , A. Michon, G. Saint-Girons, G. Beaudoin, I. Sagnes, L. Largeau, G. Patriarche, Appl. Phys. Lett. 87, 253114 (2005)
• Voltage-controlled tunneling anisotropic magnetoresistance of a ferromagnetic p++-(Ga,Mn)As/n+-GaAs Zener-Esaki diode , R. Giraud, M. Gryglas, L. Thevenard, A. Lemaitre, G. Faini, Appl. Phys. Lett. 87(24), 242505 (2005)
• Stress-engineered orderings of self-assembled III-V semiconductor nanostructures , J. Coelho, G. Patriarche, F. Glas, G. Saint-Girons, I. Sagnes, Phys. Stat. Sol. (c) 2, 1245 (2005)
• Dislocation networks adapted to order the growth of III-Vsemiconductor nanostructures , J. Coelho, G. Patriarche, F. Glas, I. Sagnes, G. Saint-Girons, Phys. Stat. Sol. (c) 2, 1933 (2005)
• First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs , A. Rosenauer, M. Schowalter, F. Glas, D. Lamoen, Phys. Rev. B 72, 85326 (2005)
• Analysis of vapor-liquid-solid mechanism for Au-assisted GaAs nanowire growth , J.-C. Harmand, G. Patriarche, N. Pere-Laperne, M.-N. Merat-Combes, L. Travers, F. Glas, Appl. Phys. Lett. 87, 203101 (2005)
• Spin dynamics in dilute nitride semiconductors at room temperature , L. Lombez, P.-F. Braun, H. Carrere, B. Urbaszek, P. Renucci, T. Amand, X. Marie, J.-C. Harmand, Appl. Phys. Lett. 87, 252115 (2005)
• Photoluminescence properties of Te doped AlGaAsSb alloys , D.O. Toginho Filho, I.F.L. Dias, J.L. Duarte, E. Laureto, J.-C. Harmand, Brazil. J. Phys. 35, 999 (2005)
• Hole-LO phonon interaction in InAs/GaAs quantum dots , V. Preisler, R. Ferreira, S. Hameau, L. A. De Vaulchier, Y. Guldner, M.L. Sadowski, A. Lemaitre, Phys. Rev. B 72, 115309 (2005)
• Tuning the ferromagnetic properties of hydrogenated GaMnAs , L. Thevenard, L. Largeau, O. Mauguin, A. Lemaitre, B. Theys, Appl. Phys. Lett. 87, 182506 (2005)
• Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots Source , T. Taliercio, P. Valvin, R. Intartaglia, V. Sallet, J.-C. Harmand, T. Guillet, P. Lefebvre, T. Bretagnon, B. Gill, Phys. Stat. Sol. (a) 202, 2598 (2005)
• Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1−xNx structures , A. Hamdouni, F. Bousbih, S. Ben Bouzid, M. Oueslati, R. Chtourou, J.-C. Harmand, Mater. Sci. Eng. B 123, 154 (2005)
• Carrier dynamics in GaInAs/InP near-surface quantum wells , C. Symonds, J. Mangeney, G. Saint-Girons, I. Sagnes, Appl. Phys. Lett. 87, 12107 (2005)
• Polariton relaxation in semiconductor microcavities : Efficiency of electron-polariton scattering , M. Perrin, P. Senellart, A. Lemaitre, J. Bloch, Phys. Rev. B 72, 75340 (2005)
• Exciton photon strong-coupling regime for a single quantum dot in a microcavity , E. Peter, P. Senellart, D. Martrou, A. Lemaitre, J. Hours, J.-M. Gérard, J. Bloch, Phys. Rev. Lett. 95, 67401 (2005)
• Cavity optimization of optically pumped broad-area microcavity laser , S. Barbay, Y. Menesguen, I. Sagnes, R. Kuszelewicz, Appl. Phys. Lett. 86, 151119 (2005)
• The effect of potential fluctuations on the optical properties of InGaAs/InAlAs superlattices , L. C. Pocas, E.M. Lopes, J.L. Duarte, I.F.L. Dias, S. D. A Lourenco, E. Laureto, M. Valadares, A. P. Guimarães, L.A. Cury, J.-C. Harmand, J. Appl. Phys. 97, 3518 (2005)
• Electrical control of hole spin relaxation in charge tunable InAs/GaAs Quantum Dots , S. Laurent, B. Eble, O. Krebs, A. Lemaitre, B. Urbaszek, X. Marie, T. Amand, P. Voisin, Phys. Rev. Lett. 94, 147401 (2005)
• MBE growth of InAsN on (100)InAs substrates [PDF] , V. Sallet, L. Largeau, O. Mauguin, L. Travers, J.-C. Harmand, Phys. Stat. Sol. (b) 242, R43 (2005)
• Longitudinal Mode Selection in Constricted Photonic Crystal Guides and Electrically Injected Lasers , S. De Rossi, I. Sagnes, L. Le Gratiet, A. Talneau, A. Berrier, M. Mulot, S. Anand, J. L. Gentner, J. Lightwave Technol. 23, 1363 (2005)
• Influence of an in-plane electric field on exciton fine structure in InAs/GaAs self-assembled quantum dots , K. Kowalik, O. Krebs, A. Lemaitre, S. Laurent, P. Senellart, J. A. Gaj, P. Voisin, Appl. Phys. Lett. 86, 41907 (2005)
• High-Q whispering-gallery mode in GaAs/AlOx microdisks , E. Peter, I. Sagnes, G. Guirleo, S. Varoutsis, J. Bloch, A. Lemaitre, P. Senellart, Appl. Phys. Lett. 86, 21103 (2005)
• Long-wavelength room-temperature operation of a strained InGaAs/GaAs quantum well structure monolithically grown by MOCVD on a LE-PECVD graded misoriented Ge/Si virtual substrate , Y. Chriqui, G. Saint-Girons, G. Isella, H. von Kaenel, S. Bouchoule, I. Sagnes, Opt. Mat. 27, 846 (2005)
• Electroabsorption spectroscopy of Ge/Si self-assembled islands , M. El Kurdi, P. Boucaud, S. Sauvage, G. Fishman, O. Kermarrec, Y. Campidelli, D. Bensahel, G. Saint-Girons, I. Sagnes, G. Patriarche, J. Appl. Phys. 97, 83525 (2005)
• Fabrication of ultra-thin and highly flexible InP-based membranes for micro-opto-electro-mechanical systems at 1.55 ?m , M. Strassner, J.-C. Esnault, L. Leroy, J. L. Leclercq, M. Garrigues, I. Sagnes, IEEE Phot. Techn. Lett. 17, 804 (2005)
• 10 GHz train of sub500fs optical soliton like pulses from a surface emitting semiconductor laser , S. Hoogland, A. Garnache, I. Sagnes, J. S. Roberts, A. C. Tropper, IEEE Phot. Techn. Lett. 17, 267 (2005)
• Buried dislocation networks for the controlled growth of III-V semiconductor nanostructures , F. Glas, J. Coelho, G. Patriarche, G. Saint-Girons, J. Cryst. Growth 275, e1647 (2005)
• Polarity influence on the indentation punching of thin {111} GaAs foils at elevated temperatures , G. Patriarche, L. Largeau, J. P. Riviere, E. Le Bourhis, J. Phys. D 38, 1140 (2005)
• Nanoindentation response of a single micrometer-sized GaAs wall , E. Le Bourhis, G. Patriarche, Appl. Phys. Lett. 86, 163107 (2005)
• Optical and structural investigations of InGaP free-standing microrods , MKK Nakaema, MPF Godo, F. Ikawa, D. Silva, M. Sacilotti, J. Decobert, G. Patriarche, J. Appl. Phys. 98, 53506 (2005)
• Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xNx layers , F. Bousbih, S. Ben Bouzid, A. Hamdouni, R. Chtourou, J.-C. Harmand, Mater. Sci. Eng. B 123, 211 (2005)
• Optical anisotropy and photoluminescence excitation density dependence for auto-organized Al0.28In0.72As/Al0.28Ga0.72As quantum dots , A. Melliti, A. Sahli, W. Ouerghia, K. Kerkania, M. Maarefa, A. Lemaitre, P. Voisin, Physica E 27, 369 (2005)
• Measuring propagation loss in a multimode semiconductor waveguide , A. De Rossi, V. Ortiz, M. Calligaro, L. Lanco, S. Ducci, V. Berger, I. Sagnes, J. Appl. Phys. 97, 73105 (2005)
• Conservative indentation flow throughout thin (011) InP foils , L. Largeau, G. Patriarche, E. Le Bourhis, J. P. Riviere, J. Mater. Sci.-Mat. Electronics 40, 3805 (2005)
• Mid-infrared intersublevel absorption of vertically electronically coupled InAs quantum dots , C. Kammerer, S. Sauvage, G. Fishman, P. Boucaud, G. Patriarche, A. Lemaitre, Appl. Phys. Lett. 87, 173113 (2005)
• Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells , R. Kudrawiec, G. Sek, K. Ryczko, J. Misiewicz, J.-C. Harmand, Appl. Phys. Lett. 84, 3453 (2004)
• GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 mu m emission[PDF] , J.-C. Harmand, L. Li, G. Patriarche, L. Travers, Appl. Phys. Lett. 84, 3981 (2004)
• Band Structure calculations for dilute nitride quantum wells under compressive or tensile strain , H. Carrere, X. Marie, J. Barrau, T. Amand, S. Ben Bouzid, V. Sallet, J.-C. Harmand, J. Phys.: Condens. Matter 16, S3215 (2004)
• Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells , J. Misiewicz, R. Kudrawiec, K. Ryczko, G. Sek, A. Forchel, J.-C. Harmand, M. Hammar, J. Phys.: Condens. Matter 16, S3071 (2004)
• Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compounds , R. Kudrawiec, G. Sek, J. Misiewicz, L. Li, J.-C. Harmand, Eur. Phys. J. AP 27, 313 (2004)
• Band structure calculation of InGaAsN/GaAs, InGaAsN/GaAsP/GaAs, and InGaAsN/InGaAsP/InP strained quantum wells , H. Carrere, X. Marie, J. Barrau, T. Amand, S. Ben Bouzid, V. Sallet, J.-C. Harmand, IEE Proceedings-Optoelectronic 151, 402 (2004)
• Excitons bound to nitrogen complexes in heavily doped GaAs1-xNx grown on GaAs misoriented substrates , F. Bousbih, S. Ben Bouzid, R. Chtourou, J.-C. Harmand, Mater. Sci. Eng. B 112, 50 (2004)
• Indentation-induced crystallization and phase transformation of amorphous germanium , G. Patriarche, E. Le Bourhis, MMO. Khayyat, M.M. Chaudhri, J. Appl. Phys. 96, 1464 (2004)
• Solid-solution strengthening in ordered InGaP alloys , E. Le Bourhis, G. Patriarche, Philos. Mag. Lett. 84, 373 (2004)
• Vickers indentation of thin GaAs(001) samples , G. Patriarche, L. Largeau, J. P. Riviere, E. Le Bourhis, Philos. Mag. 84, 3281 (2004)
• Further insight into the growth temperature influence of 1.3 ?m GaInNAs/GaAs QWs on their properties , D. Jahan, G. Patriarche, V. Sallet, J.-C. Harmand, IEE Proceedings-Optoelectronic 151 n?5, 279 (2004)
• Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates , L.F. Bian, D.S. Jiang, P.H. Tan, S.L. Lu, B.Q. Sun, L. Li, J.-C. Harmand, Solid State Commun. 132, 707 (2004)
• Photocurrent spectroscopy of GaInAsN and GaInAsSbN strained quantum wells grown by molecular beam epitaxy , S. Ben Bouzid, F. Bousbih, R. Chtourou, J.-C. Harmand, P. Voisin, Sensors or Actuators 113, 365 (2004)
• The effect of the static atomic displacements on the structure factors of weak reflections in cubic semiconductor alloys , F. Glas, Philos. Mag. 84, 2055 (2004)
• Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates , N. El Dahdah, G. Aubin, J.-C. Harmand, A. Ramdane, A. Shen, F. Devaux, A. Garreau, B.-E. Benkelfat, Appl. Phys. Lett. 84, 4268 (2004)
• In-P Based wavelength tunable monolithic VCSEL structure with InP/air-gap top mirror compatible with a single epitaxy step , S. Bouchoule, J. L. Leclercq, P. Regreny, I. Sagnes, J. Jacquet, M. Strassner, A. Plais, F. Poingt, Proc. SPIE 5453, 5453-24 (2004)
• Absolute determination of the asymmetry of the in-plane deformation of GaAs(011) , L. Largeau, G. Patriarche, F. Glas, E. Le Bourhis, J. Appl. Phys. 95, 3984 (2004)
• Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy , L. Li, V. Sallet, G. Patriarche, L. Largeau, L. Travers, J.-C. Harmand, J. Cryst. Growth 263, 58 (2004)
• Room temperature CW lasing operation of monolithically grown 1.55 μm vertical external cavity surface emitting laser , C. Symonds, I. Sagnes, J.-L. Oudar, S. Bouchoule, A. Garnache, J. Berggren, M. Strassner, Opt. Commun. 230, 419 (2004)
• Experimental investigation of the C-MN matrix element in the band anticrossing model for GaAsN and GaInAsN layers , R. Kudrawiec, G. Sek, J. Misiewicz, L.H. Li, J.-C. Harmand, Solid State Commun. 129, 353 (2004)
• Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots , G. Saint-Girons, A. Lemaitre, V. Navarro-Paredes, G. Patriarche, E. V. K Rao, I. Sagnes, B. Theys, J. Cryst. Growth 264, 334 (2004)
• Direct growth of GaAs based structures on exactly (001)-oriented Ge/Si virtual substrates : reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection , Y. Chriqui, L. Largeau, G. Patriarche, G. Saint-Girons, S. Bouchoule, I. Sagnes, D. Bensahel, Y. Campidelli, O. Kermarrec, J. Cryst. Growth 265, 53 (2004)
• Tunable and wavelength selective pin photodiode , H. Halbritter, F. Riemenschneider, S. Syguda, C. Dhanavantri, M. Strassner, A. Tarraf, B. R. Singh, I. Sagnes, P. Meissner, Electron. Lett. 40, 388 (2004)
• AM and RIN of a Tunable Optically Pumped 1.6 µm VCSEL , H. Halbritter, F. Riemenschneider, J. Jacquet, J.-G. Provost, I. Sagnes, P. Meissner, IEEE Phot. Techn. Lett. 16, 723 (2004)
• Chirp and linewidth enhancement factor of tunable, optically-pumped long wavelength VCSEL , H. Halbritter, F. Riemenschneider, J. Jacquet, J.-G. Provost, C. Symonds, I. Sagnes, P. Meissner, Electron. Lett. 40, 242 (2004)
• Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate , G. Patriarche, L. Largeau, J.-C. Harmand, D. Gollub, Appl. Phys. Lett. 84, 203 (2004)
• 9.7 GHz small-signal bandwidth of 3-quantum well GaInAsN/GaAs laser diodes operating at 1.35 µm , A. Martinez, J.-G. Provost, B. Dagens, V. Sallet, D. Jahan, K. Merghem, L. Ferlazzo, J.-C. Harmand, A. Ramdane, Electron. Lett. 40, 425 (2004)
• Polarity-induced changes in the nanoindentation response of GaAs , E. Le Bourhis, G. Patriarche, L. Largeau, J. P. Riviere, J. Mater. Sci.-Mat. Electronics 19, 131 (2004)
• TEM study of the indentation behaviour of thin Au film on GaAs , G. Patriarche, E. Le Bourhis, D. Faurie, P.-O. Renault, Thin Solid Films 460, 150 (2004)
• Indentation punching through thin (011) InP , L. Largeau, G. Patriarche, A. Riviere, J. P. Riviere, E. Le Bourhis, J. Mater. Sci.-Mat. Electronics 39, 943 (2004)
• Composition profiling of InAs/GaAs quantum dots , A. Lemaitre, G. Patriarche, F. Glas, Appl. Phys. Lett. 85, 3717 (2004)
• Determination of the local concentrations of Mn intertitials and antisite defects in GaMnAs , F. Glas, G. Patriarche, L. Largeau, A. Lemaitre, Phys. Rev. Lett. 93, 86107 (2004)
• Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures , J. Coelho, G. Patriarche, F. Glas, G. Saint-Girons, I. Sagnes, L. Largeau, Phys. Rev. B 70, 155329 (2004)
• Long range ordering of III-V semiconductor nanostructures by shallowly buried dislocations networks , J. Coelho, G. Patriarche, F. Glas, G. Saint-Girons, I. Sagnes, J. Phys.: Condens. Matter 16, 7941 (2004)
• Cavity-enhanced absorption spectroscopy with a mode-locked diode-pumped vertical external-cavity surface-emitting laser , T. Gherman, I. Sagnes, A. Garnache, Z. L. Zhang, Chem. Phys. Lett. 390, 290 (2004)
• Room Temperature laser operation of strained InGaAs/GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge/Si virtual substrate , Y. Chriqui, G. Saint-Girons, S. Bouchoule, J.-M. Moison, G. Isella, H. von Kaenel, I. Sagnes, Electron. Lett. 39, 1658 (2003)
• Continuous wave operation of monolithically grown 1.5 µm optically pumped Vertical-External-Cavity Surface-Emitting Lasers , C. Symonds, I. Sagnes, A. Garnache, S. Hoogland, G. Saint-Girons, A. C. Tropper, J.-L. Oudar, Appl. Opt. 42, 6678 (2003)
• Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN , R. Kudrawiec, G. Sek, J. Misiewicz, L. Li, J.-C. Harmand, Appl. Phys. Lett. 83, 1379 (2003)
• Investigations on GaInNAsSb quinary alloy for 1.5 mu m laser emission on GaAs [PDF] , S. P. Li, L.H. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, L. Travers, J.-C. Harmand, Appl. Phys. Lett. 83, 1298 (2003)
• Elastic relaxation of a truncated circular cylinder with uniform dilatational eigenstrain in a half space , F. Glas, Phys. Stat. Sol. (b) 237, 599 (2003)
• Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures , R. Mouillet, L. A. De Vaulchier, E. Deleporte, Y. Guldner, L. Travers, J.-C. Harmand, Solid State Commun. 126, 333 (2003)
• Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular epitaxy , S. D. A Lourenco, I.F.L. Dias, L. C. Pocas, J.L. Duarte, J. B. B de Oliveira, J.-C. Harmand, J. Appl. Phys. 93, 4475 (2003)
• Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 µm wavelength , S. P. Li, G. Patriarche, A. Lemaitre, L. Largeau, L. Travers, J.-C. Harmand, J. Cryst. Growth 251, 403 (2003)
• The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well , L.F. Bian, D.S. Jiang, S.L. Lu, Y. H. Chang, L.H. Li, J.-C. Harmand, J. Cryst. Growth 250, 339 (2003)
• 1.5 mu m laser on GaAs with GalnNAsSb quinary quantum well , S. P. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, K. Merghem, L. Travers, J.-C. Harmand, Electron. Lett. 39, 519 (2003)
• Electromodulation of the interband and intraband absorption of Ge/Si self assembled islands , M. El Kurdi, P. Boucaud, S. Sauvage, G. Fishman, O. Kermarrec, Y. Campidelli, D. Bensahel, G. Saint-Girons, G. Patriarche, I. Sagnes, Physica E 16, 450 (2003)
• Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islands , M. El Kurdi, P. Boucaud, S. Sauvage, G. Fishman, O. Kermarrec, Y. Campidelli, D. Bensahel, G. Saint-Girons, G. Patriarche, I. Sagnes, Physica E 16, 523 (2003)
• A new concept for tunable long wavelength VCSEL , F. Riemenschneider, I. Sagnes, G. Bohm, H. Halbritter, M. Maute, C. Symonds, M. C. Amann, P. Meissner, Opt. Commun. 222, 341 (2003)
• Picosecond pulse generation with a 1.5-mm passively mode-locked surface-emitting semiconductor laser , S. Hoogland, A. Garnache, I. Sagnes, B. Paldus, K. J. Weingarten, R. Grange, M. Haiml, R. Paschotta, U. Keller, A. C. Tropper, Electron. Lett. 39, 846 (2003)
• Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP , J. Decobert, G. Patriarche, J. Appl. Phys. 92, 5749 (2003)
• Control of nitrogen incorporation in Ga(In)Nas grown by metalorganic vapor phase epitaxy , J. Derluyn, I. Moerman, M. R. Leys, G. Patriarche, G. Sek, R. Kudrawiec, K. Ryczko, J. Misiewicz, J. Appl. Phys. 94, 2752 (2003)
• Thermal stability of ion-irradiated InGaAs with sub-picosecond carrier lifetime , L. Joulaud, J. Mangeney, J. M. Lourtioz, P. Croizat, G. Patriarche, Appl. Phys. Lett. 82, 856 (2003)
• Effects of annealing on the structure of GaAs(001) nanoindentations , E. Le Bourhis, G. Patriarche, Philos. Mag. Lett. 83, 149 (2003)
• Plasticity of misoriented (001) GaAs surface , G. Patriarche, E. Le Bourhis, J. Mater. Sci.-Mat. Electronics 22, 565 (2003)
• Indentation-induced deformations of GaAs(011) at a high temperature , L. Largeau, G. Patriarche, E. Le Bourhis, A. Riviere, J. P. Riviere, Philos. Mag. A 83, 1653 (2003)
• Effect on nitrogen in the electronic stucture of GaAsN and GaAsSbN compounds , F. Bousbih, S. Ben Bouzid, R. Chtourou, F. F. Charfi, J.-C. Harmand, G. Ungaro, Mater. Sci. Eng. C 21, 251 (2002)
• Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dots , M. El Kurdi, P. Boucaud, S. Sauvage, O. Kermarrec, Y. Campidelli, D. Bensahel, G. Saint-Girons, I. Sagnes, Appl. Phys. Lett. 80, 509 (2002)
• Finite size effects on superlattice acoustic phonons studied by microcavity enhanced Raman scattering , M. Trigo, A. Fainstein, R. G. Pregliasco, B. Jusserand, V. Thierry-Mieg, Physica E 13, 437 (2002)
• Finite-size effects on acoustic phonons in GaAs/AlAs superlattices , M. Trigo, A. Fainstein, B. Jusserand, V. Thierry-Mieg, Phys. Rev. B 66, 65535 (2002)
• Confinenement of acoustical vibrations in a semiconductor planar phonon cavity , M. Trigo, A. Bruchhausen, A. Fainstein, B. Jusserand, V. Thierry-Mieg, Phys. Rev. Lett. 89, 65535 (2002)
• Analytical calculation of the strain field of single and periodic misfitting polygonal wires in a half space , F. Glas, Philos. Mag. A 82, 2591 (2002)
• Elastic relaxation of isolated and interacting truncated pyramidal quantum dots and quantum wires in a half space , F. Glas, Appl. Surf. Sci. 188, 9 (2002)
• Microscopic structure and optical properties of GaAsN/GaAs(001) interface grown by metalorganic vapor phase epitaxy , H. Dumont, L. Auvrey, Y. Monteil, C. Bondoux, L. Largeau, G. Patriarche, Appl. Phys. Lett. 80, 2460 (2002)
• Strength enhancement of compensated InP/AlP Superlattice , E. Le Bourhis, G. Patriarche, Phys. Stat. Sol. (a) 189, 75 (2002)
• Subsurface deformations induced by a Vickers indenter in GaAs/AlGaAs superlattice , L. Largeau, G. Patriarche, E. Le Bourhis, J. Mater. Sci.-Mat. Electronics 21, 401 (2002)
• Low-load deformation of InP under contact loading: comparison with GaAs , G. Patriarche, E. Le Bourhis, Philos. Mag. A 82, 1953 (2002)
• Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots , G. Saint-Girons, G. Patriarche, A. Mereuta, I. Sagnes, J. Appl. Phys. 91, 3859 (2002)
• Metal organic vapour phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 ?m , G. Saint-Girons, G. Patriarche, L. Largeau, J. Coelho, A. Mereuta, J.-M. Gérard, I. Sagnes, J. Cryst. Growth 235, 89 (2002)
• Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadening , G. Saint-Girons, I. Sagnes, J. Appl. Phys. 91, 10115 (2002)
• <500-fs soliton pulse in a passively mode - locked broadband surface-emitting laser with 100-mW average power , A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, J. S. Roberts, Appl. Phys. Lett. 80, 3892 (2002)
• Silicon-on-insulator waveguide photodetector with Ge/Si self-assembled islands , M. El Kurdi, P. Boucaud, S. Sauvage, G. Fishman, O. Kermarrec, Y. Campidelli, D. Bensahel, G. Saint-Girons, I. Sagnes, G. Patriarche, J. Appl. Phys. 92, 1858 (2002)
• Low-cost electrothermally tunable optical microcavity , F. Riemenschneider, M. Aziz, H. Halbritter, I. Sagnes, P. Meissner, IEEE Phot. Techn. Lett. 14, 1522 (2002)
• Effect of nitrogen and temperature on the electronic band structure of GaAs1-xNx alloys , R. Chtourou, F. Bousbih, S. Ben Bouzid, F. F. Charfi, J.-C. Harmand, G. Ungaro, L. Largeau, Appl. Phys. Lett. 80, 2075 (2002)
• Photoluminescence study of interfaces between heavily doped AlInAs(Si) layers and InP(Fe) substrates , L. C. Pocas, J.L. Duarte, I.F.L. Dias, E. Laureto, S. D. A Lourenco, D.O. Toginho Filho, E. A. Meneses, I. Mazzaro, J.-C. Harmand, J. Appl. Phys. 91, 8999 (2002)
• GaNAsSb: How does it compare with other dilute III-V-nitride alloys , J.-C. Harmand, A. Caliman, E. V. K Rao, L. Largeau, J. Ramos, R. Teissier, L. Travers, G. Ungaro, B. Theys, I.F.L. Dias, Semicond. Sci. Technol. 17, 778 (2002)
• High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes , A. Caliman, A. Ramdane, D. Meichenin, L. Ferlazzo, B. Sermage, G. Ungaro, L. Travers, J.-C. Harmand, Electron. Lett. 38, 710 (2002)
• Efficient acoustic phonon broadening in single self-assembled InAs/GaAs quantum dots , C. Kammerer, G. Cassabois, C. Voisin, C. Delalande, P. Roussignol, A. Lemaitre, J.-M. Gérard, Phys. Rev. B 65, 33313 (2002)
• 500-fs soliton pulse in a passively mode - locked broadband surface-emitting laser with 100-mW average power [PDF] , A. Garnache, S. Hoogland, A. C. Tropper, I. Sagnes, G. Saint-Girons, J. S. Roberts, Appl. Phys. Lett. 80, 3892 (2002)
• Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells , M. Levy, YU. L. Khait, R. Besterman, A. Sa'ar, V. Thierry-Mieg, R. Planel, Appl. Phys. Lett. 78, 2879 (2001)
• Energy-level localization in Bragg-confined asymmetric coupled quantum wells studied by electric field modulation spectroscopy , M. Levy, R. Besterman, R. Kapon, A. Sa'ar, V. Thierry-Mieg, R. Planel, Phys. Rev. B 63, 65535 (2001)
• Bimodal distribution of Indium composition in arrays of low-pressure metal-organic vapour-phase epitaxy grown InGaAs/GaAs quantum dots , G. Saint-Girons, G. Patriarche, L. Largeau, J. Coelho, A. Mereuta, J.-M. Moison, J.-M. Gérard, I. Sagnes, Appl. Phys. Lett. 79, 2157 (2001)
• A new MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55 µm VCSELs , I. Sagnes, G. Le Roux, C. Meriadec, A. Mereuta, G. Saint-Girons, M. Bensoussan, Electron. Lett. 37, 500 (2001)
• Elementary excitations in modulation-doped Cd(Mn)Te quantum wells , B. Jusserand, G. Karczewski, G. Cywinski, T. Wojtowicz, A. Lemaitre, C. Testelin, C. Rigaux, Phys. Rev. B 63, 65535 (2001)
• Elastic relaxation of truncated pyramidal quantum dots and quantum wires in a half space: An analytical calculation , F. Glas, J. Appl. Phys. 90, 3232 (2001)
• Plastic behaviour of an AlAs/GaAs superlattice with a short period , E. Le Bourhis, G. Patriarche, Philos. Mag. Lett. 81, 223 (2001)
• Non-linear solid solution strengthening of InGaAs alloy , G. Patriarche, E. Le Bourhis, J. Mater. Sci.-Mat. Electronics 20, 43 (2001)
• Height dispersion control of InAs/InP quantum dots emitting at 1,55 ?m , C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, G. Patriarche, Appl. Phys. Lett. 78, 1751 (2001)
• In detph deformartion of InP under a Vickers indentor , G. Patriarche, E. Le Bourhis, J. Mater. Sci.-Mat. Electronics 36, 1343 (2001)
• Devitrification of fluorozirconate glass: FROM nucleation to spinodal decomposition , M. Mortier, A. Monteville, G. Patriarche, G. Maze, F. Auzel, Opt. Mat. 16, 255 (2001)
• Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy , G. Patriarche, E. Le Bourhis, Appl. Surf. Sci. 178, 134 (2001)
• Plasticity of GaAs compliant substructures , E. Le Bourhis, G. Patriarche, Mater. Sci. Eng. A 309-310, 478 (2001)
• Deformations of (011) GaAs under concentrated load , E. Le Bourhis, L. Largeau, G. Patriarche, J. P. Riviere, J. Mater. Sci.-Mat. Electronics 20, 1361 (2001)
• Plasticity of GaAs(011) at room temperature , G. Patriarche, L. Largeau, E. Le Bourhis, Philos. Mag. Lett. 81, 527 (2001)
• Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice , L. Largeau, C. Bondoux, G. Patriarche, C. Asplund, A. Fujioka, F. Salomonsson, M. Hammar, Appl. Phys. Lett. 79, 2157 (2001)
• Onset of plasticity in a Sigma5 GaAs compliant structure , E. Le Bourhis, G. Patriarche, Philos. Mag. Lett. 81, 813 (2001)
• Standing optical phonons in finite semiconductor superlattices studied by resonant Raman scattering in a double microcavity , A. Fainstein, M. Trigo, D. Oliva, B. Jusserand, T. Freixanet, V. Thierry-Mieg, Phys. Rev. Lett. 86, 3411 (2001)
• Raman spectroscopy of semiconductor nanostructures in optically confined microcavities , M. Trigo, A. Fainstein, B. Jusserand, V. Thierry-Mieg, Physica E 11, 205 (2001)
• Onset of plasticity in a Sigma5 GaAs compliant structure , E. Le Bourhis, G. Patriarche, Philos. Mag. Lett. 81, 813 (2001)
• Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE , A. Mereuta, S. Bouchoule, F. Alexandre, I. Sagnes, J. Decobert, A. Ougazzaden, Electron. Lett. 36, 436 (2000)
• Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs distributed Bragg mirror on InP , I.F.L. Dias, J.L. Duarte, E. Laureto, R. V. Gelamo, E. A. Menezes, J.-C. Harmand, Superlatt. Microstruct. 28, 29 (2000)
• Comparison of nitrogen incorporation in molecular beam epitaxy of GaAsN, GaInAsN, and GaAsSbN , J.-C. Harmand, G. Ungaro, L. Largeau, G. Le Roux, Appl. Phys. Lett. 77, 2482 (2000)
• Normal incidence Raman scattering enhancement in double-cavity microresonators , B. Jusserand, T. Freixanet, A. Fainstein, Physica E 7, 646 (2000)
• Center-of-mass quantized exciton polariton states in bulk-GaAs microcavities , A. Fainstein, B. Jusserand, P. Senellart, J. Bloch, V. Thierry-Mieg, R. Planel, Phys. Rev. B 62, 8199 (2000)
• Thermodynamic and kinetic instabilities of lattice-matched semiconductor alloy layers: Compositional and morphological perturbations , F. Glas, Phys. Rev. B 62, 7393 (2000)
• Step-bunching instability in strained-layer supperlattices grown on vicinal substrates , G. Patriarche, A. Ougazzaden, F. Glas, Appl. Phys. Lett. 76, 306 (2000)
• Nanoindentation of GaAs compliant substrates , G. Patriarche, E. Le Bourhis, Philos. Mag. A 80, 2899 (2000)
• GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth , G. Patriarche, C. Meriadec, G. Le Roux, C. Deparis, I. Sagnes, J.-C. Harmand, F. Glas, Appl. Surf. Sci. 164, 15 (2000)
• Structural characterisation of transparent oxyfluoride glass-ceramics , M. Mortier, G. Patriarche, J. Mater. Sci.-Mat. Electronics 35, 4849 (2000)
• Room-temperature plasticity of InAs , E. Le Bourhis, G. Patriarche, Phys. Stat. Sol. (a) 179, 153 (2000)
• Strain and composition of capped Ge/Si self assembled quantum dots grown by chemical vapor deposition , G. Patriarche, I. Sagnes, P. Boucaud, V. Le Thanh, D. Bouchier, C. Hernandez, Y. Campidelli, D. Bensahel, Appl. Phys. Lett. 77, 370 (2000)
• Deformations induced by a Vickers indentor in InP at room temperature , E. Le Bourhis, G. Patriarche, Eur. Phys. J. AP 12, 31 (2000)
• TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures , G. Patriarche, F. Glas, G. Le Roux, L. Largeau, A. Mereuta, A. Ougazzaden, J. L. Benchimol, J. Cryst. Growth 221, 12 (2000)
• Resonant mechanisms of inelastic light scattering by low dimensionnal electron gases , B. Jusserand, M. N. Vijayaraghavan, F. Laruelle, A. Cavanna, B. Etienne, Phys. Rev. Lett. 85, 5400 (2000)
• Dispersive and localized one-dimensional plasmons in very narrow quantum wires , F. Perez, B. Jusserand, B. Etienne, Physica E 7, 521 (2000)
• Novel technologies for 1.55 ?m vertical cavity lasers , K. Streubel, M. Hammar, F. Salomonsson, J. Bentell, S. Mogg, S. Rapp, J. Jacquet, J. Boucart, C. Stark, A. Plais, F. Gaborit, E. Derouin, N. Bouche, A. Rudra, A. V. Syrbu, V. P. Iakovlev, C. A. Berseth, O. Dehaese, E. Kapon, H. Moussa, I. Sagnes, R. Raj, Opt. Eng. 39, 488 (2000)
• 1.3 µm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and Influence of the re-growth temperature on the spectral response , G. Saint-Girons, A. Mereuta, J.-M. Gérard, A. Ramdane, I. Sagnes, Mater. Sci. Eng. B 78, 145 (2000)
• Infrared second-order optical susceptibility in InAs/GaAs self-assembled quantum dots , T. Brunhes, P. Boucaud, S. Sauvage, A. Lemaitre, J.-M. Gérard, F. Glotin, R. Prazeres, J.-M. Ortega, Phys. Rev. B 61, 5562 (2000)
• Midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots , S. Sauvage, P. Boucaud, T. Brunhes, A. Lemaitre, J.-M. Gérard, Phys. Rev. B 60, 15589 (2000)
• Room-temperature GaAs/AlGaAs multiple-quantum-well optical modulators for the 3-5 ?m atmospheric window , H. Alause, W. Knap, J. L. Robert, R. Planel, V. Thierry-Mieg, F.H. Julien, K. Zekentes, V. Mosser, Semicond. Sci. Technol. 15, 724 (2000)
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• Spin energetics in a GaAs quantum well: Asymmetric spin-flip Raman scattering , D. Richards, B. Jusserand, Phys. Rev. B 59, 0 (1999)
• TEM observations of low-load indents in GaAs , E. Le Bourhis, E. Zakka-bajjani, G. Patriarche, J. Segala, F. Portier, P. Roche, D. C. Glattli, A. Cavanna, Y. Jin, Philos. Mag. Lett. 79, 805 (1999)
• Plasmons and the quantum LIMIT in semiconductor wires , F. Perez, B. Jusserand, B. Etienne, Phys. Rev. B 60, 13310 (1999)
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• Near room-temperature continuous-wave operation of electrically pumped 1.55 ?m vertical cavity lasers with InGaAsP/InP bottom mirror , S. Rapp, F. Salomonsson, J. Bentell, I. Sagnes, H. Moussa, C. Meriadec, R. Raj, K. Streubel, M. Hammar, Electron. Lett. 35, 49 (1999)
• +55°C pulse lasing at 1.56 µm of all-monolithic InGaAlAs/InP vertical cavity lasers , C. Kazmierski, J. P. Debray, R. Madani, I. Sagnes, A. Ougazzaden, N. Bouadma, J. Etrillard, M. Quillec, Electron. Lett. 35, 811 (1999)
• MOVPE growth of a monolithic VCSEL at 1.56 ?m in the InGaAlAs-InAlAs system lattice matched to InP , J. P. Debray, I. Sagnes, G. Le Roux, P. Legay, M. Quillec, C. Kazmierski, R. Madani, J. F. Palmier, IEEE Phot. Techn. Lett. 11, 770 (1999)
• Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor , C. Hernandez, Y. Campidelli, D. Simon, D. Bensahel, I. Sagnes, G. Patriarche, P. Boucaud, S. Sauvage, J. Appl. Phys. 86, 1145 (1999)
• Continuous wave operation under optical pumping of a 1.48 µm vertical cavity laser on InP at room temperature , J.-C. Harmand, G. Ungaro, B. Sermage, I. Sagnes, J. P. Debray, C. Meriadec, J.-L. Oudar, J. Cryst. Growth 201, 837 (1999)
• Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis , E. Laureto, I.F.L. Dias, J.L. Duarte, E. Di Mauro, H. Iwamoto, M. T. P Freitas, S. D. A Lourenco, D.O. Toginho Filho, J.-C. Harmand, J. Appl. Phys. 85, 4184 (1999)
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• Strong electron-phonon coupling regime in quantum dots: evidence for ever-lasting resonant polarons , S. Hameau, Y. Guldner, O. Verzelen, R. Ferreira, G. Bastard, J. Zeman, A. Lemaitre, J.-M. Gérard, Phys. Rev. Lett. 83, 4152 (1999)
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• Experimental evidence for the effect of nonequilibrium acoustic plasmons on carrier relaxation in bulk semiconductors , J. -F. Lampin, F. X. Camescasse, A. Alexandrou, M. Bonitz, V. Thierry-Mieg, Phys. Rev. B 60, 0 (1999)
• Quantum box size effect on vertical self-alignment studied using cross-sectional scanning tunneling microscopy , B. Legrand, J. P. Nys, B. Grandidier, D. Stievenard, A. Lemaitre, J.-M. Gérard, V. Thierry-Mieg, Appl. Phys. Lett. 74, 2608 (1999)

• Heterostructures and strain relaxation in semiconductor nanowires , F. Glas, Lattice engineering: Technologies and applications, éd. par S. M. Wang (Pan Stanford Publishing, Singapore, 2012) 5, 189 (2012)
• Growth of III-arsenide/phosphide nanowires by molecular beam epitaxy , J.-C. Harmand, F. Glas, G. Patriarche, M. Tchernycheva, C. Sartel, L. Liu, F. Jabeen, Advances in III-V semiconductor nanowires and nanodevices (ed. J. Li, D. Wang et R. R. LaPierre) , 68 (2011)
• Elastic strain relaxation: thermodynamics and kinetics [PDF] , F. Glas, Mechanical stress on the nanoscale - simulation, material systems and characterization techniques (ed. M. Hanbücken, P. Müller, R. B. Wehrspohn) , 3 (2011)
• Introduction a? la thermodynamique des systemes contraints , F. Glas, Contraintes mecaniques en micro, nano et optoelectronique (ed. par M. Mouis) , 77 (2006)
• Relaxation elastique des contraintes , F. Glas, Contraintes mecaniques en micro, nano et optoelectronique (ed. par M. Mouis) , 203 (2006)
• Dilute Nitride Semiconductors : GaAsSbN alloy and its potential for device applications , J.-C. Harmand, Dilute Nitride Semiconductors, by M. Henini, Elsevier 2005 , (2005)