email:
Tel: (+33) 1 69 63 60 65
Groupe:
ELPHYSE
Actions:
QD
,
PHeW
,
SemiMag
,
Nanowires
Thèmes:
PHEH
,
CMEP
,
NGES
Laboratoire de Photonique et de Nanostructures depuis 2000-11-13
Publications
Publications
- Arsenic Pathways in Self-Catalyzed Growth of GaAs Nanowires
M.R. Ramdani, J.-C. Harmand, F. Glas, G. Patriarche, L. Travers, Cryst. Growth Des. 13, 91 (2013)
- STM/STS investigation of edge structure in epitaxial graphene
M. Ridene, J.-C. Girard, L. Travers, C. David, A. Ouerghi, Surface Science 606, 1289 (2012)
- N-Polar GaN Nanowires Seeded by Al Droplets on Si(111)
L. Largeau, E. Galopin, N. Gogneau, L. Travers, F. Glas, J.-C. Harmand, Cryst. Growth Des. 12, 2724 (2012)
- STM/STS investigation of edge structure in epitaxial graphene
M. Ridene, J.-C. Girard, L. Travers, C. David, A. Ouerghi, Surface Science 606, 1289 (2012)
- Picosecond carrier lifetimes in dilute GaInNAs grown on InP substrate
J. Mangeney, M. Martin, J.-C. Harmand, L. Travers, O. Mauguin, Appl. Phys. Lett. 99, 141902 (2011)
- Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy
E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, J.-C. Harmand, Nanotechnology 22, 245606 (2011)
- Epitaxial graphene on cubic SiC(111)/Si(111) substrate
A. Ouerghi, A. Kahouli, D. Lucot, M. Portail, L. Travers, J. Gierak, J. Peneluas, P. Jegou, A. Shukla, T. Chassagne, M. Zielinski, Appl. Phys. Lett. 96, 191910 (2010)
- Epitaxial Growth and Picosecond Carrier Dynamics of GaInAs/GaInNAs Superlattices
M. Martin, J. Mangeney, L. Travers, C. Minot, J.-C. Harmand, O. Mauguin, G. Patriarche, Appl. Phys. Lett. 95, 141910 (2009)
- Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy
L. Rigutti, A.D. Bugallo, M. Tchernycheva, G. Jacopin, F.H. Julien, G. E. Cirlin, G. Patriarche, D. Lucot, L. Travers, J.-C. Harmand, JNM 2009, 435451 (2009)
- Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers
A. Lemaitre, A. Miard, L. Travers, O. Mauguin, L. Largeau, C. Gourdon, V. Jeudy, M. Tran, J.-M. George, Appl. Phys. Lett. 93, 21123 (2008)
- Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry
M. Lajnef, N. Ben Sedrine, J.-C. Harmand, L. Travers, H. Ezzaouia, R. Chtourou, Eur. Phys. J.-Appl. Phys 42, 99 (2008)
- Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry
M. Lajnef, N. Ben Sedrine, J.-C. Harmand, L. Travers, H. Ezzaouia, R. Chtourou, Eur. Phys. J. AP 2, 99 (2008)
- Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
M. Tchernycheva, L. Travers, G. Patriarche, F. Glas, J.-C. Harmand, G. E. Cirlin, V. G. Dubrovskii, J. Appl. Phys. 102, 94313 (2007)
- Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization
M. Tchernycheva, C. Sartel, G. E. Cirlin, L. Travers, G. Patriarche, J.-C. Harmand, D. Le Si Dang, J. Renard, B. Gayral, L. Nevou, F. Julien, Nanotechnology 18, 385306 (2007)
- Growth and characterization of InP nanowires with InAsP insertions
M. Tchernycheva, G. E. Cirlin, G. Patriarche, L. Travers, V. Zwiller, U. Perinetti, J.-C. Harmand, Nano Lett. 7, 1500 (2007)
- Enhanced kinetics of Al0.97Ga0.03As wet oxidation through the use of hydrogenation
M. Le Du, I. Sagnes, G. Beaudoin, L. Travers, J.-C. Esnault, J.-C. Harmand, Appl. Phys. Lett. 89, 111105 (2006)
- Temperatures conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy
M. Tchernycheva, J.-C. Harmand, G. Patriarche, L. Travers, G. E. Cirlin, Nanotechnology 17, 4025 (2006)
- Quantum-well saturable absorber at 1.55 mu m on GaAs substrate with a fast recombination rate
M. Le Du, J.-C. Harmand, O. Mauguin, L. Largeau, L. Travers, J.-L. Oudar, Appl. Phys. Lett. 88, 201110 (2006)
- Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE
V. Sallet, G. Patriarche, M.-N. Merat-Combes, L. Largeau, O. Mauguin, L. Travers, J. Cryst. Growth 280, 80 (2006)
- Analysis of vapor-liquid-solid mechanism for Au-assisted GaAs nanowire growth J.-C. Harmand, G. Patriarche, N. Pere-Laperne, M.-N. Merat-Combes, L. Travers, F. Glas, Appl. Phys. Lett. 87, 203101 (2005)
- MBE growth of InAsN on (100)InAs substrates
[PDF]
V. Sallet, L. Largeau, O. Mauguin, L. Travers, J.-C. Harmand, Phys. Stat. Sol. (b) 242, R43 (2005)
- GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 mu m emission[PDF]
J.-C. Harmand, L. Li, G. Patriarche, L. Travers, Appl. Phys. Lett. 84, 3981 (2004)
- Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy L. Li, V. Sallet, G. Patriarche, L. Largeau, L. Travers, J.-C. Harmand, J. Cryst. Growth 263, 58 (2004)
- Investigations on GaInNAsSb quinary alloy for 1.5 mu m laser emission on GaAs
[PDF]
S. P. Li, L.H. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, L. Travers, J.-C. Harmand, Appl. Phys. Lett. 83, 1298 (2003)
- Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures R. Mouillet, L. A. De Vaulchier, E. Deleporte, Y. Guldner, L. Travers, J.-C. Harmand, Solid State Commun. 126, 333 (2003)
- Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 µm wavelength S. P. Li, G. Patriarche, A. Lemaitre, L. Largeau, L. Travers, J.-C. Harmand, J. Cryst. Growth 251, 403 (2003)
- 1.5 mu m laser on GaAs with GalnNAsSb quinary quantum well S. P. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, K. Merghem, L. Travers, J.-C. Harmand, Electron. Lett. 39, 519 (2003)
- GaNAsSb: How does it compare with other dilute III-V-nitride alloys J.-C. Harmand, A. Caliman, E. V. K Rao, L. Largeau, J. Ramos, R. Teissier, L. Travers, G. Ungaro, B. Theys, I.F.L. Dias, Semicond. Sci. Technol. 17, 778 (2002)
- High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes A. Caliman, A. Ramdane, D. Meichenin, L. Ferlazzo, B. Sermage, G. Ungaro, L. Travers, J.-C. Harmand, Electron. Lett. 38, 710 (2002)
