email:
Tel: (+33) 1 69 63 60 81
Groupe:
ELPHYSE
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GuiWac
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AMoN
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PHeW
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SpeRe
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SpecLumH
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TBH
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SimuMod
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VCDev
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COMS
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Nanowires
Thèmes:
CMEP
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PHEH
Contrats: GIFT, REGINAL, SINTROPS, AHTOS, SUB-SUP, FILEMON35, BONAFO, OISEAUX, ROOTS, UPSTIN
Laboratoire de Photonique et de Nanostructures depuis 1999-12-27
Publications
Publications
- Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice
J. Song, S. Bouchoule, G. Patriarche, E. Galopin, A. Giacomotti, E. Cambril, Q. Kou, D. Troadec, J.-J. He, J.-C. Harmand, Phys. Status Solidi A-Appl. Mat. 1-7, (2013)
- Arsenic Pathways in Self-Catalyzed Growth of GaAs Nanowires
M.R. Ramdani, J.-C. Harmand, F. Glas, G. Patriarche, L. Travers, Cryst. Growth Des. 13, 91 (2013)
- Magnetic thaw down and boil-off of electrons in the quantum Hall effect regime due to magnetoacceptors in GaAs/GaAlAs heterostructures
I. Bisotto, C. Chaubet, A. Raymond, J.-C. Harmand, M. Kubisa, W. Zawadzki, Phys. Rev. B 86, 85321 (2012)
- Effect of diffusion from a lateral surface on the rate of GaN nanowire growth
N. V. Sibirev, M. Tchernycheva, G. E. Cirlin, G. Patriarche, J.-C. Harmand, V. G. Dubrovskii, Semicond. 6, 838 (2012)
- N-Polar GaN Nanowires Seeded by Al Droplets on Si(111)
L. Largeau, E. Galopin, N. Gogneau, L. Travers, F. Glas, J.-C. Harmand, Cryst. Growth Des. 12, 2724 (2012)
- Influence of shadow effect on the growth and shape of InAs nanowires
N. V. Sibirev, M. Tchernycheva, M. Timofeeva, J.-C. Harmand, G. E. Cirlin, V. G. Dubrovskii, J. Appl. Phys. 111, 104317 (2012)
- A cost-effective thermally-managed 1.55 µm VECSEL with hybrid mirror on copper substrate
Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, J.-L. Oudar, IEEE J. Quant. Electron. 48, 643 (2012)
- Picosecond to sub-picosecond pulse generation from mode-locked VECSELs at 1.55 μm
S. Bouchoule, Z. Zhao, A. Khadour, E. Galopin, J.-C. Harmand, J. Song, G. Aubin, J. Decobert, J.-L. Oudar, Proc. SPIE 8242, 824203 (2012)
- Conduction band structure in wurtzite GaAs nanowires: A resonant Raman scattering study
W. Peng, F. Jabeen, B. Jusserand, J.-C. Harmand, M. Bernard, Appl. Phys. Lett. 100, 73102 (2012)
- Effect of Postgrowth Heat Treatment on the Structural and Optical Properties of InP/InAsP/InP Nanowires
G. E. Cirlin, M. Tchernycheva, G. Patriarche, J.-C. Harmand, Semicond. 46, 175 (2012)
- Picosecond carrier lifetimes in dilute GaInNAs grown on InP substrate
J. Mangeney, M. Martin, J.-C. Harmand, L. Travers, O. Mauguin, Appl. Phys. Lett. 99, 141902 (2011)
- Sub-picosecond pulse generation from a 1.56 μm mode-locked VECSEL
Z. Zhao, S. Bouchoule, J. Song, E. Galopin, J.-C. Harmand, J. Decobert, G. Aubin, J.-L. Oudar, Opt. Lett. 36 (issue 22), 4377 (2011)
- Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wells
S. D. A Lourenco, M. A. T da Silva, I.F.L. Dias, J.L. Duarte, J.-C. Harmand, J. Phys.: Condens. Matter 23, 325801 (2011)
- Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy
E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, J.-C. Harmand, Nanotechnology 22, 245606 (2011)
- Correlation of optical and structural properties of GaN/AlN core-shell nanowires
L. Rigutti, G. Jacopin, L. Largeau, E. Galopin, A. De Luna Bugallo, F.H. Julien, J.-C. Harmand, F. Glas, M. Tchernycheva, Phys. Rev. B 83, 155320 (2011)
- Giant spin-dependent photo-conductivity in GaAsN dilute nitride semiconductor
A. Kunold, A. Balocchi, F. Zhao, T. Amand, N. Ben Abdallah, J.-C. Harmand, X. Marie, Phys. Rev. B 83, 165202 (2011)
- Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires
D. Lucot, F. Jabeen, J.-C. Harmand, G. Patriarche, R. Giraud, G. Faini, D. Mailly, Appl. Phys. Lett. 98, 142114 (2011)
- Optical properties of GaAs(0.9-x)N(x)Sb(0.1) alloy films studied by spectroscopic ellipsometry
N. Ben Sedrine, C. Bouhafs, M. Schubert, J.-C. Harmand, R. Chtourou, V. Darakchieva, Thin Solid Films 519, 2838 (2011)
- New mode of vapor-liquid-solid nanowire growth
V. G. Dubrovskii, G. E. Cirlin, N. V. Sibirev, F. Jabeen, J.-C. Harmand, P. Werner, Nano Lett. 11, 1247 (2011)
- GaP/GaAs1-xPx nanowires fabricated with modulated fluxes: A step towards the realization of superlattices in a single nanowire
F. Jabeen, G. Patriarche, F. Glas, J.-C. Harmand, J. Cryst. Growth 323, 293 (2010)
- Effect of nitrogen on the GaAs(0.9-x)N(x)Sb(0.1) dielectric function from the near-infrared to the ultraviolet
N. Ben Sedrine, C. Bouhafs, J.-C. Harmand, R. Chtourou, V. Darakchieva, Appl. Phys. Lett. 97, 201903 (2010)
- Wide InP Nanowires with Wurtzite/Zincblende Superlattice Segments Are Type-II whereas Narrower Nanowires Become Type-I: An Atomistic Pseudopotential Calculation
LJ Zhang, Z. L. Zhang, J.-W. Luo, A. Zunger, N. Akopian, V. Zwiller, J.-C. Harmand, Nano Lett. 10, 4055 (2010)
- Investigation of the electronic transport in GaN nanowires containing GaN/AlN quantum discs
L. Rigutti, G. Jacopin, A.D. Bugallo, M. Tchernycheva, E. Warde, F.H. Julien, R. Songmuang, E. Galopin, L. Largeau, J.-C. Harmand, Nanotechnology 21, 425206 (2010)
- Ultrashort pulse generation from 1.56 μm mode-locked VECSEL at room temperature
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A. Khadour, S. Bouchoule, G. Aubin, J.-C. Harmand, J. Decobert, J.-L. Oudar, Optics Express 18, 19902 (2010)
- Growth of inclined GaAs nanowires by molecular beam epitaxy: theory and experiment
X. Zhang, V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, C. Sartel, M. Tchernycheva, J.-C. Harmand, F. Glas, Nanoscale Res. Lett. 5, 1692 (2010)
- Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy
C. Sartel, D.L. Dheeraj, F. Jabeen, J.-C. Harmand, J. Cryst. Growth 312, 2073 (2010)
- Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires
J.-M. Jancu, K. Gauthron, L. Largeau, G. Patriarche, J.-C. Harmand, P. Voisin, Appl. Phys. Lett. 97, 41910 (2010)
- Crystal Phase Quantum Dots
N. Akopian, G. Patriarche, L. Liu, J.-C. Harmand, V. Zwiller, Nano Lett. 10, 1198 (2010)
- Silicon nanowires: Diameter dependence of growth rate and delay in growth
F. Dhalluin, T. Baron, P. Ferret, B. Salem, B. Gentile, J.-C. Harmand, Appl. Phys. Lett. 96, 1198 (2010)
- Nucleation antibunching in catalyst-assisted nanowire growth
F. Glas, J.-C. Harmand, G. Patriarche, Phys. Rev. Lett. 104, 135501 (2010)
- Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors
F. Glas, G. Patriarche, J.-C. Harmand, J. Phys.: Conf. Ser. 209, 12002 (2010)
- Growth kinetics of a single InP1-xAsx nanowire
J.-C. Harmand, F. Glas, G. Patriarche, Phys. Rev. B 81, 235436 (2010)
- Local structure of indium in quinary (InGa)(AsSbN)/GaAs quantum wells
J. Chen, J. Chen, G. Ciatto, M. Le Du, J.-C. Harmand, F. Glas, Phys. Rev. B 82, 125303 (2010)
- Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature
F. Zhao, A. Balocchi, A. Kunold, J. Carrey, H. Carrere, T. Amand, N. Ben Abdallah, J.-C. Harmand, X. Marie, Appl. Phys. Lett. 95, 241104 (2009)
- Role of nonlinear effects in nanowire growth and crystal phase
V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, A. D. Bouravleuv, Yu. B. Samsonenko, D.L. Dheeraj, H.L. Zhou, C. Sartel, J.-C. Harmand, G. Patriarche, F. Glas, Phys. Rev. B 80, 205305 (2009)
- Effects of repulsive and attractive ionized impurities on the resistivity of semiconductor heterostructures in the quantum Hall regime
A. Raymond, I. Bisotto, Y. M. Meziani, S. Bonifacie, C. Chaubet, A. Cavanna, J.-C. Harmand, Phys. Rev. B 80, 195316 (2009)
- Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy
H.L. Zhou, T. B. Hoang, D.L. Dheeraj, A.T.J. van Helvoort, L. Liu, J.-C. Harmand, B. O. Fimland, H. Weman, Nanotechnology 20, 415701 (2009)
- Epitaxial Growth and Picosecond Carrier Dynamics of GaInAs/GaInNAs Superlattices
M. Martin, J. Mangeney, L. Travers, C. Minot, J.-C. Harmand, O. Mauguin, G. Patriarche, Appl. Phys. Lett. 95, 141910 (2009)
- Towards a monolithic optical cavity for atom detection and manipulation
S. Gleyzes, A. El Amili, R.A. Cornelussen, P. Lalanne, C.I. Westbrook, A. Aspect, J. Esteve, G. Moreau, A. Martinez, X. Lafosse, L. Ferlazzo, J.-C. Harmand, D. Mailly, A. Ramdane, Eur. Phys. J. D 53, 107 (2009)
- Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates
G. E. Cirlin, V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, Yu. B. Samsonenko, A. D. Bouravleuv, J.-C. Harmand, F. Glas, Phys. Stat. Sol. RRL 3, 112 (2009)
- Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor
X. J. Wang, I. A. Buyanova, F. Zhao, D. Lagarde, A. Balocchi, X. Marie, C. W. Tu, J.-C. Harmand, W.M. Chen, Nature Materials 8, 198 (2009)
- Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy
J. Rihani, V. Sallet, N. Yahyaoui, J.-C. Harmand, M. Oueslati, R. Chtourou, J. Lumin. 129, 251 (2009)
- Electron spin control in dilute nitride semiconductors
F. Zhao, A. Balocchi, G. Truong, T. Amand, X. Marie, X. J. Wang, I. A. Buyanova, W.M. Chen, J.-C. Harmand, J. Phys.: Condens. Matter 21, 174211 (2009)
- Towards a monolithic optical cavity for atom detection and manipulation
S. Gleyzes, A. El Amili, R.A. Cornelussen, P. Lalanne, C.I. Westbrook, A. Aspect, J. Esteve, G. Moreau, A. Martinez, X. Lafosse, L. Ferlazzo, J.-C. Harmand, D. Mailly, A. Ramdane, Eur. Phys. J. D 53, 107 (2009)
- Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires
D.L. Dheeraj, G. Patriarche, H.L. Zhou, J.-C. Harmand, H. Weman, B. O. Fimland, J. Cryst. Growth 311, 1847 (2009)
- Photoluminescence study of nitrogen effects on confined states in GaAs1-xNx/GaAs quantum wells
I. Dhifallah, S. Aloulou, A. Bardaoui, J.-C. Harmand, R. Chtourou, Eur. Phys. J. AP 47, 30302 (2009)
- Tunable doped-fibre vertical cavity surface emitting laser
N. Laurand, S. Calvez, M. D. Dawson, S. Bouchoule, J.-C. Harmand, J. Decobert, Electron. Lett. 45, 887 (2009)
- Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy
L. Rigutti, A.D. Bugallo, M. Tchernycheva, G. Jacopin, F.H. Julien, G. E. Cirlin, G. Patriarche, D. Lucot, L. Travers, J.-C. Harmand, JNM 2009, 435451 (2009)
- Growth kinetics and crystal structure of semiconductor nanowires
V. G. Dubrovskii, N. V. Sibirev, J.-C. Harmand, F. Glas, Phys. Rev. B 78, 235301 (2008)
- Optics with single nanowires
V. Zwiller, N. Akopian, M. van Weert, M. van Kouwen, U. Perinetti, L. Kouwenhoven, R. Algra, J.G. Rivas, E. Bakkers, G. Patriarche, L. Liu, J.-C. Harmand, Y. Kobayashi, J. Motohisa, C.R. Phys. 9, 804 (2008)
- Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry
M. Lajnef, N. Ben Sedrine, J.-C. Harmand, L. Travers, H. Ezzaouia, R. Chtourou, Eur. Phys. J.-Appl. Phys 42, 99 (2008)
- Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)
L. Largeau, D.L. Dheeraj, M. Tchernycheva, G. E. Cirlin, J.-C. Harmand, Nanotechnology 19, 155704 (2008)
- Optical constants and critical-point parameters of GaAs1-xSbx alloy films grown on GaAs
N. Ben Sedrine, T. Gharbi, J.-C. Harmand, R. Chtourou, Phys. Status Solidi A-Appl. Mat. 205, 833 (2008)
- Thermal optimization of 1.55 um OP-VECSEL with hybrid metal-metamorphic mirror for single-mode high power operation
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J.-P. Tourrenc, S. Bouchoule, A. Khadour, J.-C. Harmand, A. Miard, J. Decobert, N. Lagay, X. Lafosse, I. Sagnes, L. Leroy, J.-L. Oudar, Opt. Quant. Electron. 40, 155 (2008)
- Zinc blende GaAsSb nanowires grown by molecular beam epitaxy
D.L. Dheeraj, G. Patriarche, L. Largeau, H.L. Zhou, A.T.J. van Helvoort, F. Glas, J.-C. Harmand, B. O. Fimland, H. Weman, Nanotechnology 19, 275605 (2008)
- Nanocolonnes semi-conductrices
J.-C. Harmand, F. Glas, G. Patriarche, M. Tchernycheva, Images de la Physique 2007, 57 (2008)
- Wurtzite to zinc-blende phase transition in GaAs nanowires induced by epitaxial burying
G. Patriarche, F. Glas, M. Tchernycheva, C. Sartel, L. Largeau, J.-C. Harmand, G. E. Cirlin, Nano Lett. 8, 1638 (2008)
- Shape modification of III-V nanowires: The role of nucleation on sidewalls
V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, M. Tchernycheva, J.-C. Harmand, V. Ustinov, Phys. Rev. E 77, 31606 (2008)
- Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry
M. Lajnef, N. Ben Sedrine, J.-C. Harmand, L. Travers, H. Ezzaouia, R. Chtourou, Eur. Phys. J. AP 2, 99 (2008)
- Optical constants and critical-point parameters of GaAs1-xSbx alloy films grown on GaAs
N. Ben Sedrine, T. Gharbi, J.-C. Harmand, R. Chtourou, Phys. Stat. Sol. (a) 4, 833 (2008)
- Heterostructure formation in nanowhiskers via diffusion mechanism
M. V. Nazarenko, N. V. Sibirev, G. E. Cirlin, G. Patriarche, J.-C. Harmand, V. G. Dubrovskii, Technical Phys. Lett. 34, 750 (2008)
- Optical properties of GaInNAsSb/GaAs/GaAs1-xNx (x approximate to 10%)saturable absorber quantum wells
S. Ben Bouzid, W. Zaghdoudi, A. Hamdouni, N. Ben Sedrine, F. Bousbih, J.-C. Harmand, R. Chtourou, Appl. Surf. Sci. 254, 7122 (2008)
- Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM
N.K. Metzger, C. G. Leburn, A. A. Lagatsky, C. T. A Brown, S. Calvez, D. Burns, H. D. Sun, M. D. Dawson, M. Le Du, J.-C. Harmand, W. Sibbett, Optics Express 16, 18739 (2008)
- Optics with single nanowires
V. Zwiller, N. Akopian, M. van Weert, M. van Kouwen, U. Perinetti, L. Kouwenhoven, R. Algra, J.G. Rivas, E. Bakkers, G. Patriarche, L. Liu, J.-C. Harmand, Y. Kobayashi, J. Motohisa, C. R. Acad. Sci. Phys. 9, 804 (2008)
- Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy
G. E. Cirlin, N. V. Sibirev, C. Sartel, J.-C. Harmand, Semicond. 42, 710 (2008)
- Temperature-dependent photoluminescence spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs single quantum wells under different excitation intensities
S. D. A Lourenco, I.F.L. Dias, J.L. Duarte, E. Laureto, V. M. Aquino, J.-C. Harmand, Brazil. J. Phys. 37, 1212 (2007)
- Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
M. Tchernycheva, L. Travers, G. Patriarche, F. Glas, J.-C. Harmand, G. E. Cirlin, V. G. Dubrovskii, J. Appl. Phys. 102, 94313 (2007)
- Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization
M. Tchernycheva, C. Sartel, G. E. Cirlin, L. Travers, G. Patriarche, J.-C. Harmand, D. Le Si Dang, J. Renard, B. Gayral, L. Nevou, F. Julien, Nanotechnology 18, 385306 (2007)
- Combined raman study of InGaAsN from the N-impurity and InGaAs-matrix sides
A. Chafi, O. Pages, A. V. Postnikov, J. Gleize, V. Sallet, E. Rzepka, L.H. Li, B. Jusserand, J.-C. Harmand, Appl. Phys. Lett. 91, 51910 (2007)
- High power single-longitudinal-mode OP-VECSEL at 1.55 mu m with hybrid metal-metamorphic Bragg mirror
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J.-P. Tourrenc, S. Bouchoule, A. Khadour, J. Decobert, A. Miard, J.-C. Harmand, J.-L. Oudar, Electron. Lett. 43, 754 (2007)
- Effect of deposition conditions on nanowhisker morphology
V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, G. E. Cirlin, V. Ustinov, M. Tchernycheva, J.-C. Harmand, Semicond. 41, 865 (2007)
- Redistribution of nitrogen localized states in GaAsN layer doped Silicon
A. Hamdouni, N. Ben Sedrine, J.-C. Harmand, R. Chtourou, Eur. Phys. J. AP 38, 221 (2007)
- Growth and characterization of InP nanowires with InAsP insertions
M. Tchernycheva, G. E. Cirlin, G. Patriarche, L. Travers, V. Zwiller, U. Perinetti, J.-C. Harmand, Nano Lett. 7, 1500 (2007)
- Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice
E.M. Lopes, J.L. Duarte, I.F.L. Dias, L. C. Pocas, E. Laureto, J.-C. Harmand, J. Phys.: Condens. Matter 19, (2007)
- Why does wurtzite form in nanowires of III-V zinc-blende semiconductors
F. Glas, J.-C. Harmand, G. Patriarche, Phys. Rev. Lett. 99, 146101 (2007)
- Anions relative location in the group-V sublattice of GaAsSbN/GaAs epilayers: XAFS measurements and simulations
G. Ciatto, J.-C. Harmand, F. Glas, L. Largeau, M. Le Du, F. Boscherini, M. Malvestuto, L. Floreano, P. Glatzel, R. Alonso Mori, Phys. Rev. B 75, 245212 (2007)
- Optical and electrical properties of Te doped AlGaAsSb/AlAsSb Bragg mirrors on InP
D.O. Toginho Filho, I.F.L. Dias, J.L. Duarte, E. Laureto, J.-C. Harmand, Brazil. J. Phys. 36, 1250 (2006)
- The effect of potential fluctuations on the optical properties of InGaAs/InGaAlAs single and coupled double quantum wells
L. C. Pocas, J.L. Duarte, E.M. Lopes, I.F.L. Dias, E. Laureto, D.F. Cesar, J.-C. Harmand, J. Appl. Phys. 100, 53519 (2006)
- Enhanced kinetics of Al0.97Ga0.03As wet oxidation through the use of hydrogenation
M. Le Du, I. Sagnes, G. Beaudoin, L. Travers, J.-C. Esnault, J.-C. Harmand, Appl. Phys. Lett. 89, 111105 (2006)
- The role of surface diffusion of adatoms in the formation of nanowire crystals
V. G. Dubrovskii, N. V. Sibirev, RA Suris, G. E. Cirlin, V.M. Ustinov, M. Tchernycheva, J.-C. Harmand, Semicond. 40, 1075 (2006)
- Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors
M. Le Du, D. Massoubre, J.-C. Harmand, J.-L. Oudar, Electron. Lett. 42, 1060 (2006)
- Temperatures conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy
M. Tchernycheva, J.-C. Harmand, G. Patriarche, L. Travers, G. E. Cirlin, Nanotechnology 17, 4025 (2006)
- Clustering in GaAsSbN alloys as a possible origin of their atypical optical behavior: a Sb K-edge X-ray absorption study
G. Ciatto, J.-C. Harmand, L. Largeau, F. Glas, Phys. Stat. Sol. (c) 3, 1931 (2006)
- Quantum-well saturable absorber at 1.55 mu m on GaAs substrate with a fast recombination rate
M. Le Du, J.-C. Harmand, O. Mauguin, L. Largeau, L. Travers, J.-L. Oudar, Appl. Phys. Lett. 88, 201110 (2006)
- Calculation of the temperature profile in nanowhiskers growing on a hot substrate
F. Glas, J.-C. Harmand, Phys. Rev. B 73, 155320 (2006)
- Optimization and characterization of InGaAsN/GaAs quantum-well ridge diodes for high frequency operation
S. Bonnefont, B. Messant, M. Boutillier, O. Gauthier-Lafaye, F. Lozes, A. Martinez, V. Sallet, K. Merghem, L. Ferlazzo, J.-C. Harmand, A. Ramdane, J.-G. Provost, B. Dagens, L. Le Gouezigou, J. Landreau, X. Marie, Opt. Quant. Electron. 38, 313 (2006)
- Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy
V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, J.-C. Harmand, V. Ustinov, Phys. Rev. E 73, 21603 (2006)
- Scaling of the switching energy in microcavity saturable absorber devices D. Massoubre, J.-L. Oudar, J. Dion, J.-C. Harmand, A. Shen, J. Landreau, J. Decobert, Appl. Phys. Lett. 88, 153513 (2006)
- Analysis of vapor-liquid-solid mechanism for Au-assisted GaAs nanowire growth J.-C. Harmand, G. Patriarche, N. Pere-Laperne, M.-N. Merat-Combes, L. Travers, F. Glas, Appl. Phys. Lett. 87, 203101 (2005)
- Spin dynamics in dilute nitride semiconductors at room temperature L. Lombez, P.-F. Braun, H. Carrere, B. Urbaszek, P. Renucci, T. Amand, X. Marie, J.-C. Harmand, Appl. Phys. Lett. 87, 252115 (2005)
- Photoluminescence properties of Te doped AlGaAsSb alloys D.O. Toginho Filho, I.F.L. Dias, J.L. Duarte, E. Laureto, J.-C. Harmand, Brazil. J. Phys. 35, 999 (2005)
- Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots Source T. Taliercio, P. Valvin, R. Intartaglia, V. Sallet, J.-C. Harmand, T. Guillet, P. Lefebvre, T. Bretagnon, B. Gill, Phys. Stat. Sol. (a) 202, 2598 (2005)
- Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1−xNx structures A. Hamdouni, F. Bousbih, S. Ben Bouzid, M. Oueslati, R. Chtourou, J.-C. Harmand, Mater. Sci. Eng. B 123, 154 (2005)
- The effect of potential fluctuations on the optical properties of InGaAs/InAlAs superlattices L. C. Pocas, E.M. Lopes, J.L. Duarte, I.F.L. Dias, S. D. A Lourenco, E. Laureto, M. Valadares, A. P. Guimarães, L.A. Cury, J.-C. Harmand, J. Appl. Phys. 97, 3518 (2005)
- MBE growth of InAsN on (100)InAs substrates
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V. Sallet, L. Largeau, O. Mauguin, L. Travers, J.-C. Harmand, Phys. Stat. Sol. (b) 242, R43 (2005)
- Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xNx layers F. Bousbih, S. Ben Bouzid, A. Hamdouni, R. Chtourou, J.-C. Harmand, Mater. Sci. Eng. B 123, 211 (2005)
- Photoreflectance investigations of oscillator strength and broadening of optical transitions for GaAsSb-GaInAs/GaAs bilayer quantum wells R. Kudrawiec, G. Sek, K. Ryczko, J. Misiewicz, J.-C. Harmand, Appl. Phys. Lett. 84, 3453 (2004)
- GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 mu m emission[PDF]
J.-C. Harmand, L. Li, G. Patriarche, L. Travers, Appl. Phys. Lett. 84, 3981 (2004)
- Band Structure calculations for dilute nitride quantum wells under compressive or tensile strain H. Carrere, X. Marie, J. Barrau, T. Amand, S. Ben Bouzid, V. Sallet, J.-C. Harmand, J. Phys.: Condens. Matter 16, S3215 (2004)
- Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells J. Misiewicz, R. Kudrawiec, K. Ryczko, G. Sek, A. Forchel, J.-C. Harmand, M. Hammar, J. Phys.: Condens. Matter 16, S3071 (2004)
- Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compounds R. Kudrawiec, G. Sek, J. Misiewicz, L. Li, J.-C. Harmand, Eur. Phys. J. AP 27, 313 (2004)
- Band structure calculation of InGaAsN/GaAs, InGaAsN/GaAsP/GaAs, and InGaAsN/InGaAsP/InP strained quantum wells H. Carrere, X. Marie, J. Barrau, T. Amand, S. Ben Bouzid, V. Sallet, J.-C. Harmand, IEE Proceedings-Optoelectronic 151, 402 (2004)
- Excitons bound to nitrogen complexes in heavily doped GaAs1-xNx grown on GaAs misoriented substrates F. Bousbih, S. Ben Bouzid, R. Chtourou, J.-C. Harmand, Mater. Sci. Eng. B 112, 50 (2004)
- High frequency performance of 3-quantum well GaInNAs/GaAs ridge waveguide lasers emitting at 1.35?m A. Martinez, V. Sallet, D. Jahan, J.-G. Provost, J. Landreau, L. Le Gouezigou, B. Dagens, L. Ferlazzo, J.-C. Harmand, A. Ramdane, IEE Proceedings-Optoelectronic , 425 (2004)
- Further insight into the growth temperature influence of 1.3 ?m GaInNAs/GaAs QWs on their properties D. Jahan, G. Patriarche, V. Sallet, J.-C. Harmand, IEE Proceedings-Optoelectronic 151 n?5, 279 (2004)
- Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates L.F. Bian, D.S. Jiang, P.H. Tan, S.L. Lu, B.Q. Sun, L. Li, J.-C. Harmand, Solid State Commun. 132, 707 (2004)
- Photocurrent spectroscopy of GaInAsN and GaInAsSbN strained quantum wells grown by molecular beam epitaxy S. Ben Bouzid, F. Bousbih, R. Chtourou, J.-C. Harmand, P. Voisin, Sensors or Actuators 113, 365 (2004)
- Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates N. El Dahdah, G. Aubin, J.-C. Harmand, A. Ramdane, A. Shen, F. Devaux, A. Garreau, B.-E. Benkelfat, Appl. Phys. Lett. 84, 4268 (2004)
- Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy L. Li, V. Sallet, G. Patriarche, L. Largeau, L. Travers, J.-C. Harmand, J. Cryst. Growth 263, 58 (2004)
- Experimental investigation of the C-MN matrix element in the band anticrossing model for GaAsN and GaInAsN layers R. Kudrawiec, G. Sek, J. Misiewicz, L.H. Li, J.-C. Harmand, Solid State Commun. 129, 353 (2004)
- Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate G. Patriarche, L. Largeau, J.-C. Harmand, D. Gollub, Appl. Phys. Lett. 84, 203 (2004)
- 9.7 GHz small-signal bandwidth of 3-quantum well GaInAsN/GaAs laser diodes operating at 1.35 µm A. Martinez, J.-G. Provost, B. Dagens, V. Sallet, D. Jahan, K. Merghem, L. Ferlazzo, J.-C. Harmand, A. Ramdane, Electron. Lett. 40, 425 (2004)
- Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN R. Kudrawiec, G. Sek, J. Misiewicz, L. Li, J.-C. Harmand, Appl. Phys. Lett. 83, 1379 (2003)
- Investigations on GaInNAsSb quinary alloy for 1.5 mu m laser emission on GaAs
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S. P. Li, L.H. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, L. Travers, J.-C. Harmand, Appl. Phys. Lett. 83, 1298 (2003)
- Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures R. Mouillet, L. A. De Vaulchier, E. Deleporte, Y. Guldner, L. Travers, J.-C. Harmand, Solid State Commun. 126, 333 (2003)
- Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular epitaxy S. D. A Lourenco, I.F.L. Dias, L. C. Pocas, J.L. Duarte, J. B. B de Oliveira, J.-C. Harmand, J. Appl. Phys. 93, 4475 (2003)
- Doping dependence of millimeterwave negative differential conductance in strain-compensated GaInAs/AlInAs superlattices C. Minot, J.-C. Harmand, J.-C. Esnault, Physica E 17, 294 (2003)
- Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 µm wavelength S. P. Li, G. Patriarche, A. Lemaitre, L. Largeau, L. Travers, J.-C. Harmand, J. Cryst. Growth 251, 403 (2003)
- The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well L.F. Bian, D.S. Jiang, S.L. Lu, Y. H. Chang, L.H. Li, J.-C. Harmand, J. Cryst. Growth 250, 339 (2003)
- 1.5 mu m laser on GaAs with GalnNAsSb quinary quantum well S. P. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, K. Merghem, L. Travers, J.-C. Harmand, Electron. Lett. 39, 519 (2003)
- Effect on nitrogen in the electronic stucture of GaAsN and GaAsSbN compounds F. Bousbih, S. Ben Bouzid, R. Chtourou, F. F. Charfi, J.-C. Harmand, G. Ungaro, Mater. Sci. Eng. C 21, 251 (2002)
- Effect of nitrogen and temperature on the electronic band structure of GaAs1-xNx alloys R. Chtourou, F. Bousbih, S. Ben Bouzid, F. F. Charfi, J.-C. Harmand, G. Ungaro, L. Largeau, Appl. Phys. Lett. 80, 2075 (2002)
- Photoluminescence study of interfaces between heavily doped AlInAs(Si) layers and InP(Fe) substrates L. C. Pocas, J.L. Duarte, I.F.L. Dias, E. Laureto, S. D. A Lourenco, D.O. Toginho Filho, E. A. Meneses, I. Mazzaro, J.-C. Harmand, J. Appl. Phys. 91, 8999 (2002)
- GaNAsSb: How does it compare with other dilute III-V-nitride alloys J.-C. Harmand, A. Caliman, E. V. K Rao, L. Largeau, J. Ramos, R. Teissier, L. Travers, G. Ungaro, B. Theys, I.F.L. Dias, Semicond. Sci. Technol. 17, 778 (2002)
- High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes A. Caliman, A. Ramdane, D. Meichenin, L. Ferlazzo, B. Sermage, G. Ungaro, L. Travers, J.-C. Harmand, Electron. Lett. 38, 710 (2002)
- Temperature dependent valence band offset and bandgap energies of pseudomorphic GaAsSb on GaAs R. Teissier, D. Sicault, J.-C. Harmand, G. Ungaro, G. Le Roux, L. Largeau, J. Appl. Phys. 89, 5473 (2001)
- Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers J. Mangeney, H. Choumane, G. Patriarche, G. Le Roux, G. Aubin, J.-C. Harmand, H. Bernas, J.-L. Oudar, Appl. Phys. Lett. 79, 2722 (2001)
- All-optical discrimination at 1.5 µm using ultrafast saturable absorber vertical cavity device J. Mangeney, G. Aubin, J.-L. Oudar, J.-C. Harmand, G. Patriarche, H. Choumane, N. Stelmakh, J. M. Lourtioz, Electron. Lett. , 0 (2000)
- Electrical and optical characteristics of a Si-doped (Al)GaInAs digital alloy/AlInAs distributed Bragg mirror on InP I.F.L. Dias, J.L. Duarte, E. Laureto, R. V. Gelamo, E. A. Menezes, J.-C. Harmand, Superlatt. Microstruct. 28, 29 (2000)
- Comparison of nitrogen incorporation in molecular beam epitaxy of GaAsN, GaInAsN, and GaAsSbN J.-C. Harmand, G. Ungaro, L. Largeau, G. Le Roux, Appl. Phys. Lett. 77, 2482 (2000)
- GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth G. Patriarche, C. Meriadec, G. Le Roux, C. Deparis, I. Sagnes, J.-C. Harmand, F. Glas, Appl. Surf. Sci. 164, 15 (2000)
- Ultrafast saturable absorption in heavy-ion irradiated quantum well vertical cavity J. Mangeney, J.-L. Oudar, J.-C. Harmand, C. Meriadec, G. Patriarche, G. Aubin, N. Stelmakh, J. M. Lourtioz, Appl. Phys. Lett. 76, 1371 (2000)
- All-optical discrimination at 1.5 µm using an ultrafast saturable absorber created by heavy ion irradiation N. Stelmakh, G. Patriarche, J. Mangeney, J.-L. Oudar, J. M. Lourtioz, J.-C. Harmand, G. Aubin, J. Mangeney, J.-L. Oudar, C. Meriadec, J.-C. Harmand, G. Patriarche, G. Aubin, N. Stelmakh, J. M. Lourtioz, Electron. Lett. 36, 1486 (2000)
- All-optical discrimination at 1.5 µm using an ultrafast saturable absorber created by heavy ion irradiation N. Stelmakh, G. Patriarche, J. Mangeney, J.-L. Oudar, J. M. Lourtioz, J.-C. Harmand, G. Aubin, J. Mangeney, J.-L. Oudar, C. Meriadec, J.-C. Harmand, G. Patriarche, G. Aubin, N. Stelmakh, J. M. Lourtioz, Electron. Lett. 36, 1486 (2000)
- Continuous wave operation under optical pumping of a 1.48 µm vertical cavity laser on InP at room temperature J.-C. Harmand, G. Ungaro, B. Sermage, I. Sagnes, J. P. Debray, C. Meriadec, J.-L. Oudar, J. Cryst. Growth 201, 837 (1999)
- Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis E. Laureto, I.F.L. Dias, J.L. Duarte, E. Di Mauro, H. Iwamoto, M. T. P Freitas, S. D. A Lourenco, D.O. Toginho Filho, J.-C. Harmand, J. Appl. Phys. 85, 4184 (1999)
- GaAsSbN: a new low-bandgap material for GaAs substrates G. Ungaro, G. Le Roux, R. Teissier, J.-C. Harmand, Electron. Lett. 35, 1246 (1999)
- Shubnikov-de Haas-like oscillations in the vertical transport of semiconductor superlattices F. Aristone, J. C. Portal, J. F. Palmier, J.-C. Harmand, Brazil. J. Phys. 29, 375 (1999)
Publications
- Growth of III-arsenide/phosphide nanowires by molecular beam epitaxy
J.-C. Harmand, F. Glas, G. Patriarche, M. Tchernycheva, C. Sartel, L. Liu, F. Jabeen, Advances in III-V semiconductor nanowires and nanodevices (ed. J. Li, D. Wang et R. R. LaPierre) , 68 (2011)
- Dilute Nitride Semiconductors : GaAsSbN alloy and its potential for device applications J.-C. Harmand, Dilute Nitride Semiconductors, by M. Henini, Elsevier 2005 , (2005)
