Centre for Nanosciences and Nanotechnology - Marcoussis Campus
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Semiconductor and Nanostructures Processing and Analysis > LPN growth equipments
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C2N - Marcoussis Campus - epitaxy facilities consist of 4 MBE machines and 1 MOCVD machine :

Puce MBE RIBER 32

Riber32 Complementary information

Puce MBE RIBER Compact 21

Riber32 Complementary information

Puce MBE RIBER Compact 12

Riber Compact12 Overview

This machine is dedicated to epitaxy of III-nitrides nanowires.
It is equipped with a nitrogen plasma source, three cell elements III (Ga, Al and In), and two dopants cells (Si and Mg).


Puce MBE RIBER 2300

Riber2300 Complementary information

Puce MBE GEN II

Coupled with a STM/AFM microscope OM1 under ultra-vacuum

GEN II Complementary information

Puce MOVPE VEECO TurboDisc D180

VEECO D180 Complementary information



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