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Elaboration and physics of 2 DEGs
2 DEGs in the GaAs/AlGaAs material system, grown using molecular beam epitaxy (MBE), can attain very high mobilities, with electron mean free paths of tens or even hundreds of microns. In this action we use our high-purity III-V MBE system to elaborate high mobility 2 DEGs for studies in a wide variety of fields. GaAs/AlGaAs heterojunctions containing 2 DEGs with specially adjusted carrier densities and / or distance to the surface are developed for:
as well as for a number of external collaborations
We also investigate "non-conventional" 2 DEGs. These can be two-dimensional hole gases or 2 DEGs in AlAs quantum wells, where the band degeneracies, anisotropic masses, and spin-orbit interactions can lead to novel physics. Currently, our main effort here are on 2 DEGs in membrane structures, which can be used in thermodynamic studies and for nano-electro-mechanical devices.
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