Action 2DEG

Presentation

A large number of investigations are made possible thanks to high-mobility two-dimensional electron gases (2 DEGs). The very large mean-free paths of the electrons in these structures makes it possible to study the extremely rich physics when dimensionality, interactions and disorder all play a role. They are also suitable for new electronics using ballistic electron propagation. In the group of PhyNano we develop such two-dimensional electron gases for a wide range of studies, using molecular beam epitaxy (MBE) for GaAs/AlGaAs heterostructures and anataxial growth of graphene (high temperature sublimation of silicon from SiC).

This action has three main parts:

	Elaboration and physics of 2 DEGs
	UHV-STM studies of MBE growth
	Graphitization of 3C-SiC/Si: Toward Graphene-Silicon technology

Highlights

• Plasmonic biosensor made by nanoimprint (2011-08-01)
  Theme : Microfluidique et nanostructures pour la biologie , Microelectronic and Photonic Devices
  
  

Members

Contacts

Cavanna Antonella	(+33) 1 69 63 60 61
Etienne Bernard	(+33) 1 69 63 61 98
Gennser Ulf	(+33) 1 69 63 61 31
Ouerghi Abdelkarim	(+33) 1 69 63 61 11

And also...

Ridene Mohamed	(+33) 1 69 63 61 08
Velez Emilio	(+33) 1 69 63 60 86
Kazazis Dimitris	(+33) 1 69 63 61 16
Largeau Ludovic	(+33) 1 69 63 61 74
Voisin Paul	(+33) 1 69 63 61 93

Publications

• Electron cooling by acoustic phonons in graphene , F. Vialla, B. Placais, J.-M. Berroir, G. Feve, A. Madouri, A. Cavanna, M. Picher, C. Voisin, D. Brunel, C. Betz, E. Pallecchi, Phys. Rev. Lett. 109, 056805 (2012)
• Effect of oxygen adsorption on the local properties of epitaxial graphene on SiC (0001) , C. Mathieu, B. Lalmi, T. O. Mentes, E. Pallecchi, A. Locatelli, S. Latil, R. Belkhou, A. Ouerghi, Phys. Rev. B 86, 35435 (2012)
• Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption , E. Pallecchi, M. Ridene, D. Kazazis, C. Mathieu, F. Schopfer, W. Poirier, D. Mailly, A. Ouerghi, Appl. Phys. Lett. 100, 253109 (2012)
• Epitaxial graphene on single domain 3C-SiC(100) thin films grown on off-axis Si(100) , A. Ouerghi, A. Shukla, M. Marangolo, M. G. Silly, M. Eddrief, R. Belkhou, M. Picher, C. Castelli, A. Balan, F. Sirotti, Appl. Phys. Lett. 101, 021603 (2012)
• Local ion irradiation of thin graphene films grown on SiC substrates , B. Prevel, J.-M. Benoit, L. Bardotti, P. Melinon, A. Mayumi Sato, A. Ouerghi, D. Lucot, E. Bourhis, J. Gierak, Microelectron. Eng. 98, 206 (2012)
• STM/STS investigation of edge structure in epitaxial graphene , M. Ridene, J.-C. Girard, L. Travers, C. David, A. Ouerghi, Surface Science 606, 1289 (2012)
• Wideband omnidirectional infrared absorber with a patchwork of plasmonic nanoantennas [PDF] , P. Bouchon, C. Koechlin, F. Pardo, J.-L. Pelouard, R. Haïdar, Opt. Lett. 37, 1038 (2012)
• Control of the degree of surface graphitization on 3C-SiC(100)/Si(100) , N. Gogneau, A. Balan, M. Ridene, A. Shukla, A. Ouerghi, Surface Science 606, 217 (2012)
• Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain , A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vezian, D. Lefebvre, E. Roudon, M. Zielinski, T. Chassagne, M. Portail, Phys. Stat. Sol. (c) 9, N?2, 175 (2012)
• Nanostructuring graphene on SiC by focused ion beam: Effect of the ion fluence , B. Prevel, J.-M. Benoit, L. Bardotti, P. Melinon, A. Ouerghi, D. Lucot, E. Bourhis, J. Gierak, Appl. Phys. Lett. 99, 83116 (2011)
• Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells , I. Dhifallah, M. Daoudi, A. Bardaoui, B. Eljani, A. Ouerghi, R. Chtourou, J. Lumin. 131, 1007 (2011)
• Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:δSi high electron mobility transistors structures , I. Dhifallah, M. Daoudi, A. Ouerghi, M. Oueslati, R. Chtourou, Superlatt. Microstruct. 49, 519 (2011)
• Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers , A. Balan, A. Ouerghi, M. Ridene, A. Balan, R. Belkhou, A. Barbier, N. Gogneau, M. Portail, A. Michon, S. Latil, P. Jegou, A. Shukla, Phys. Rev. B 83, 205429 (2011)
• Prototyping of microfluidic systems using a commercial thermoplastic elastomer , E. Roy, M Geissler, J.-C. Galas, T Veres, Lab Chip , 1613 (2011)
• Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition , A. Michon, S. Vezian, A. Ouerghi, M. Zielinski, T. Chassagne, M. Portail, Appl. Phys. Lett. 97, 171909 (2010)
• Structural coherency of epitaxial graphene on 3C??SiC(111) epilayers on Si(111) , A. Ouerghi, R. Belkhou, M. Marangolo, M. G. Silly, S. El Moussaoui, M. Eddrief, L. Largeau, M. Portail, F. Sirotti, Appl. Phys. Lett. 97, 161905 (2010)
• Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties , A. Ouerghi, M. Marangolo, R. Belkhou, S. El Moussaoui, M. G. Silly, M. Eddrief, L. Largeau, M. Portail, B. Fain, F. Sirotti, Phys. Rev. B 82, 125445 (2010)
• Slow light modes for optical delay lines implementation: 2D Photonic Crystal-based structures, performances and challenges , A. Talneau, J. Opt. 12, 104005 (2010)
• Epitaxial graphene on cubic SiC(111)/Si(111) substrate , A. Ouerghi, A. Kahouli, D. Lucot, M. Portail, L. Travers, J. Gierak, J. Peneluas, P. Jegou, A. Shukla, T. Chassagne, M. Zielinski, Appl. Phys. Lett. 96, 191910 (2010)
• Atomic structure of the (3 à 2) SiGaAs (0 0 1) reconstructed surface: A clue to delta doping mechanism derived from in situ grazing incidence X-ray diffraction data , M. Sauvage-Simkin, R. Pinchaux, A. Coati, A. Ouerghi, Y. Garreau, B. Etienne, Surface Science 604, 415 (2010)
• Energy Relaxation in the Integer Quantum Hall Regime , H. Le Sueur, C. Altimiras, U. Gennser, A. Cavanna, D. Mailly, F. Pierre, Phys. Rev. Lett. 105, 56803 (2010)
• Non-equilibrium edge-channel spectroscopy in the integer quantum Hall regime , C. Altimiras, H. Le Sueur, U. Gennser, A. Cavanna, D. Mailly, F. Pierre, Nat. Phys. 6, 34 (2010)
• Intersubband electroluminescent devices operating in the strong-coupling regime , P. Jouy, A. Vasanelli, Y. Todorov, L. Sapienza, R. Colombelli, U. Gennser, C. Sirtori, Phys. Rev. B 82, 45322 (2010)
• A reproducible process for mesoscopic superconducting indium contacts to GaAs/AlGaAs heterostructures , S. Boulay, J. Dufouleur, P. Roche, U. Gennser, A. Cavanna, D. Mailly, J. Appl. Phys. 105, 123919 (2009)
• Tuning Decoherence with a Voltage Probe , P. Roulleau, F. Portier, P. Roche, A. Cavanna, G. Faini, U. Gennser, D. Mailly, Phys. Rev. Lett. 102, 236802 (2009)
• Spin filtering through a single impurity in a GaAs/AlAs/GaAs resonant tunneling device , B. Jouault, D. Maude, M. Gryglas, M. Baj, A. Cavanna, U. Gennser, G. Faini, D.K. Maude, Phys. Rev. B 79, 41307 (2009)
• Interplay among spin, orbital effects, and localization in a GaAs two-dimensional electron gas in a strong in-plane magnetic field , B. A. Piot, D. Maude, D.K. Maude, U. Gennser, A. Cavanna, D. Mailly, Phys. Rev. B 80, 115337 (2009)
• Noise Dephasing in Edge States of the Integer Quantum Hall Regime , P. Roulleau, F. Portier, P. Roche, A. Cavanna, G. Faini, U. Gennser, D. Mailly, Phys. Rev. Lett. 101, 186803 (2008)
• Direct Measurement of the Coherence Length of Edge States in the Integer Quantum Hall Regime , P. Roulleau, F. Portier, P. Roche, A. Cavanna, G. Faini, U. Gennser, D. Mailly, Phys. Rev. Lett. 100, 126802 (2008)
• Large scale atomic ordering in uncovered GaAs(001) after InAs monolayer capping : atomic structure of the (12x6) reconstruction , A. Ouerghi, A. Cavanna, D. Martrou, B. Etienne, Surface Science 602, 1631 (2008)
• Relaxation time of a chiral R-L circuit , J. Gabelli, G. Feve, T. Kontos, J.-M. Berroir, B. Placais, D. C. Glattli, B. Etienne, Y. Jin, M. Buttiker, Phys. Rev. Lett. 98, 166806 (2007)
• Waveguiding in nanoscale metallic apertures , S. Collin, F. Pardo, J.-L. Pelouard, Optics Express 15, 4310 (2007)
• An On-Demand Single-Electron Source , G. Feve, A. Mahe, J.-M. Berroir, T. Kontos, B. Placais, D. C. Glattli, A. Cavanna, B. Etienne, Y. Jin, Science 316, 1169 (2007)
• Magnetic-field asymmetry of mesoscopic dc rectification in Aharonov-Bohm rings , L. Angers, E. Zakka-bajjani, R. Deblock, S. Gueron, H. Bouchiat, A. Cavanna, U. Gennser, M. Polianski, Phys. Rev. B 75, 115309 (2007)
• Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors , B. A. Piot, D.K. Maude, M. Henini, Z. R. Wasilewski, J. A. Gupta, K. J. Friedland, R. Hey, K. H. Ploog, U. Gennser, D. Mailly, R. Airey, G. Hill, Phys. Rev. B 75, 155332 (2007)
• Use of a quantum-point contact high-electron-mobility transistors for time domain multiplexing of large arrays of high impedance low temperature bolometers , S.J.C. Yates, A. Benoit, E. Gremion, C. Ulysse, P. Camus, A. Cavanna, T. Durand, B. Etienne, U. Gennser, C. Hoffmann, J. L. Leclerc, Y. Jin, Rev. Sci. Instr. 78, 35104 (2007)
• Violation of Kirchhoff's laws for a coherent RC circuit , J. Gabelli, G. Feve, J.-M. Berroir, B. Placais, A. Cavanna, B. Etienne, Y. Jin, C. Glattli, Science 313, 499 (2006)
• Single impurity tunneling spectroscopy to probe the discrete states of a two-dimensional electron gas in a quantizing magnetic field , B. Jouault, M. Gryglas, G. Faini, U. Gennser, A. Cavanna, M. Baj, D.K. Maude, Phys. Rev. B 73, 155415 (2006)
• Ultraslow light propagation in an inhomogeneously broadened rare-earth ion-doped crystal [PDF] , E. Baldit, K. Bencheikh, P. Monnier, J. A. Levenson, V. Rouget, Phys. Rev. Lett. 95, 143601 (2005)
• Unreconstructed As atoms mixed with (3x2) cells and (6x6) supercells in low As pressure epitaxy on GaAs (001) , D. Martrou, A. Cavanna, F. Natali, U. Gennser, B. Etienne, Phys. Rev. B R, 241307 (2005)
• Edge states interferometer: an electronic Fabry-Perot , B. Chenaud, C. Chaubet, B. Jouault, L. Saminadayar, D. Mailly, G. Faini, A. Cavanna, Physica B 346-347, 488 (2004)
• Analysis of the resistance of two-dimensional holes in SiGe over a wide temperature range , V. Senz, T. Ihn, T. Heinzel, K. Ensslin, G. Dehlinger, D. Grutzmacher, U. Gennser, E. H. Hwang, S. das Sarma, Physica E 13, 723 (2002)
• Detection of electron scattering in an isolated double quantum dot system , C. G. Smith, S. Gardelis, J. Cooper, D. A. Ritchie, E. H. Lindield, Y. Jin, H. Launois, Physica E 12, 830 (2002)
• Super poissonian noise in the FQHE regime , V. Rodriguez, P. Roche, Y. Jin, B. Etienne, Physica E 12, 88 (2002)
• La transition metal-isolant en dimension deux , U. Gennser, D. L'Hotte, D. LHotte, J. L. Pichard, Images de la Physique , 13 (2002)
• Hot hole effects in a dilute two-dimensional gas in SiGe , R. Leturcq, D. L'Hote, R. Tourbot, V. Senz, T. Ihn, K. Ensslin, G. Dehlinger, U. Gennser, D. Grutzmacher, Europhys. Lett. 61, 499 (2002)
• Persistent currents in mesoscopic connected rings , W. Rabaud, L. Saminadayar, D. Mailly, K. Hasselbach, A. Benoit, B. Etienne, Phys. Rev. Lett. 86, 3124 (2001)
• Single-hole transistor in a p-Si/SiGe quantum well , U. Dotsch, U. Gennser, C. David, G. Dehlinger, D. Grutzmacher, T. Heinzel, S. Luscher, K. Ensslin, Appl. Phys. Lett. 78, 341 (2001)
• Nano-fabrication with focused ion beams , J. Gierak, D. Mailly, G. Faini, J.-L. Pelouard, P. Denk, F. Pardo, J.-Y. Marzin, A. Septier, G. Schmid, J. Ferre, R. Hydman, C. Chappert, J. Flicstein, B. Gayral, J.-M. Gérard, Microelectron. Eng. 57-58, 865 (2001)
• Temperature-dependent resistivity anomaly in doped AlAs/GaAs lateral superlattices: Evidence for Fermi-liquid behavior [PDF] , P. Denk, J.-L. Pelouard, Phys. Rev. B 63, 0 (2001)
• Resonant tunneling spectroscopy of the local density of states in a disordered conductor , A. K. Savchenko, J. P. Holder, V. I. Fal'ko, B. Jouault, G. Faini, F. Laruelle, E. Bedel, Phys. Stat. Sol. (b) 218, 0 (2000)
• Enhanced fluctuations os f the tunnelling density of states near bottoms of Landau bands measured by a local spectrometer , J. P. Holder, A. K. Savchenko, V. I. Fal'ko, B. Jouault, G. Faini, F. Laruelle, Phys. Rev. Lett. 84, 1563 (2000)
• Theoretical and experimental studies of magneto-tunnelling in quantum dots , M. Boero, G. Faini, B. Jouault, J. P. Holder, F. Laruelle, J. C. Inkson, A. K. Savchenko, J. Low Temp. Phys. 118, 427 (2000)
• Shot noise and the Luttinger liquid-like properties of the FQHE , D. C. Glattli, V. Rodriguez, H. Perrin, P. Roche, Y. Jin, B. Etienne, Physica E 6, 22 (2000)
• Direct observation of single-electron decay FROM an artificial nucleus , J. Cooper, C. G. Smith, D. A. Ritchie, E. H. Lindield, Y. Jin, H. Launois, Physica E 6, 457 (2000)
• Tuning of surface boundary conditions for the 3D simulation on gated heterostructures , M. Macucci, G. Iannaccone, E. Amirante, Y. Jin, H. Launois, C. Vieu, Superlatt. Microstruct. 27, 369 (2000)
• Reduction of shot-noise in quantum conductors , L. Saminadayar, A. Kumar, D. C. Glattli, Y. Jin, B. Etienne, J. Phys. IV 9, 23 (1999)
• Magnetic field effects on the fluctuations of the local density of electron states in a disordered metal , A. K. Savchenko, J. P. Holder, V. I. Fal'ko, B. Jouault, G. Faini, F. Laruelle, E. Bedel, Ann. Phys. 8, 233 (1999)
• Shape-averaged weak localisation in chaotic and integrable ballistic cavities , Y. Lee, G. Faini, D. Mailly, Chaos, Solitons & Fractals 8, 1325 (1997)
• Collective excitations of electron disks in laterally patterned Si/SiGe modulation-doped heterojunctions , S. Zanier, Y. Guldner, J.-M. Berroir, J.-P. Vieren, G. Faini, E. Cambril, L. Garchery, Y. Campidelli, I. Sagnes, Thin Solid Films 294, 315 (1997)
• Detection of the oscillation of the Fermi energy of a 2DEG , D. R. Mace, C. H. W Barnes, M. Y. Simmons, M. Pepper, C. J. B Ford, G. Faini, D. Mailly, Surface Science 361-362, 608 (1996)

Contracts and projects

ANR non thématiques

SUPERTRAMP : Au delà du graphène : Dopage, supraconductivité et transitions de phase en 2D

Reference contract : ANR BLANC
LPN leader(s): Abdelkarim Ouerghi
Main goals : Ce projet de recherche s\\\\\\\'intéresse à la possibilité d\\\\\\\'induire des transitions métal-isolant ou métal-supraconducteur par dopage dans des couches ultrafines- jusqu\\\\\\\'à la monocouche atomique- où des instabilités de charge et les singularités électroniques sont souvent exacerbées.Ce projet de recherche s\\\\\\\'intéresse à la possibilité d\\\\\\\'induire des transitions métal-isolant ou métal-supraconducteur par dopage dans des couches ultrafines- jusqu\\\\\\\'à la monocouche atomique- où des instabilités de charge et les singularités électroniques sont souvent exacerbées. (2011-2014)

Migraquel : value

Reference contract : ANR BLANC
LPN leader(s): Abdelkarim Ouerghi
Main goals : Ce projet de recherche fondamentale s\'intéresse aux propriétés dynamiques des fermions de Dirac dans le graphène qui est le matériau semi-métallique modèle pour cette physique. Le but du projet est d\'exploiter ces propriétés pour réaliser des dispositifs d\'électronique quantique novateurs centrés autour d\'une architecture de type transistor. (2010-2013)

Quantherm : Mesure de signatures thermiques de cohérence quantique

Reference contract : ANR blanc 2008
LPN leader(s): Ulf Gennser
Main goals : L’objectif de ce projet est la mise en évidence expérimentale des modifications des propriétés thermiques de nano-objets annulaires mésoscopiques (métalliques et semiconducteurs (III-V)) en présence de cohérence de phase électronique. L’expérience centrale que nous souhaitons réaliser est la mesure de variations de la chaleur spécifique en fonction du flux magnétique sur deux systèmes complémentaires : des anneaux d’argent et des gaz d’électrons bidimensionnel en GaAs/AlGaAs. (2008-2011)




ANR PNANO

THINQE_PINQE : Emetteurs quantiques THz sans inversion de population basés sur les polaritons intersousbandes

Reference contract : ANR PNANO 2009
LPN leader(s): Ulf Gennser
Main goals : : The general context of the project is the tailoring of the light-matter interaction in semiconductor structures for the realization of efficient mid-infrared and THz optoelectronic emitters. The basic idea of the project is to implement novel optoelectronic emitters operating in the strong coupling regime between an intersubband excitation of a two-dimensional electron gas and a microcavity photon mode. The devices that will be designed, realized and characterized in this project will take advantage of the fundamental properties of intersubband polaritons. The modification of the characteristic time for the light-matter interaction in the strong coupling regime will allow us to increase the quantum efficiency of THz light emitting devices. The second property that we will exploit is the fact that, under certain conditions, intersubband polaritons have a bosonic character; as a consequence they can undergo stimulated scattering. We propose to use this property to realize mid-infrared and THz lasers, working without population inversion. Finally, the dispersion of THz intersubband polaritons will allow us to obtain emitters at frequencies lower than 1 THz, approaching the microwave range. (2009-2011)




Incentive Projects of the Ministry of Research

NanoHall : Fabrication, étude et validation de capteurs de Hall submicroniques faible bruit

Reference contract : ACN
Coordinator, Partner(s) : C. Chaubet (Universite De Technologie De Troyes )
LPN leader(s): Dominique Mailly, Giancarlo Faini, Ulf Gennser
Main goals : Ce projet vise à la mise au point d'une famille de capteurs magnétiques à effet Hall basés sur des hétérostructures à puits quantiques (2004-2007)

Past and current Internship Training

Post-docs

• Developing semiconductor nanostructures for electrical transport

D. Kazazis-(On going since 2009-09-28)
Contact : U. Gennser
Group : Physique et Technologie des Nanostructures (PHYNANO)
More



• Studt by UHV MBE and STM of In and Ga atoms surface organization on surfaces vicinal to (001) having a low-disordered array of atomic steps. Application to 2D and 1D heterostructures 2D et 1D

A. Ouerghi-(2005-09-01 / 2006-08-31)
Contact : B. Etienne
Group : Physique et Technologie des Nanostructures (PHYNANO)
More

A joint study by RHEED diffraction and STM measurements has allowed us to optimize the wetting of a GaAs(001) singular surface by an InAs pseudomorphic monolayer. We have been able to obtain growth conditions for perfect wetting, resulting in a very ordered surface at atomic level, a result which is differing markedly from several data in the literature which show a very fragmented non wetting layer. Inserting in a cleaver way such a layer inside the channel of an Al.3Ga.7As/ GaAs modulation doped hetererojunction, we have been able to get 2DEG’s with a high charge density ns >1.2x1012 cm-2 having only a single populated electronic subband. This is above twice the limit for second miniband occupation in standard AlGaAs/GaAs heterojunctions. Before growth reactor cleaning and cells refilling, it was not worth starting seriously the heteroepitaxy programme on vicinal surfaces. But in a very preliminary study of heteropitaxy starting with only a submonolayer InAs, we have determined a very powerful and easy method to distinguish with a single STM scan InAs from GaAs covered areas.

PhDs

• Transport dépendant du spin dans les hétérostructures 2D

Q.-T. Nguyen-(2003-10-01 / 2006-09-30)
Contact : D. Mailly , P. Voisin
Group : Physique et Technologie des Nanostructures (PHYNANO)
More

Thèse de Doctorat


• Cohérence de phase dans des réseaux balistiques

J. Dufouleur-(2003-09-01 / 2006-09-01)
Contact : D. Mailly
Group : Physique et Technologie des Nanostructures (PHYNANO)
More

Thèse de Doctorat - Fabrication de réseaux balistiques dans des gaz d'électrons bidimensionnels. Etude des effets de cohérence de phase et d'interaction électron-électron par mesure de transport à très basse température.


• Etude des interfaces semiconducteurs/supraconducteur mésoscopiques

S. Boulay-(2002-10-01 / 2005-10-01)
Contact : D. Mailly , P. Roche
Group : Physique et Technologie des Nanostructures (PHYNANO)
More

Thèse de Doctorat - Il s'agit de l'étude du transport balistique et cohérence de phase dans des jonctions hybridesGaAlAs/supraconducteur : fabrication d'un contact ohmique supraconducteur sur un 2DEG, étude de la réfexion d'Andréev cohérente, corrélation du bruit.