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Presentation
This project deals with guided wave devices realized on GaAs and InP substrates.
Three main axes are investigated :
quantum dot based (QD) edge emitting lasers for access and metropolitan area networks
quantum dot based amplifiers and electro-optic modulators for all-optical signal processing
novel concepts in guided wave devices, in particular the use of metamaterials for new optical functions.
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QDLas : Quantum dot based lasers
The unique properties related to the three dimension confinement of charge carriers in self assembled quantum dots are exploited to develop high bit
rate (10 Gbit/s) directly modulated laser sources with low threshold current, low phase-amplitude coupling factor -Henry factor-, temperature insensitive
and feedback immune to comply with recent access and metropolitan area network standards.
The QD broad optical gain spectrum, ultrafast gain dynamics and small amplified spontaneous emission (ASE) coupled to the propagating mode are moreover
assets for sub-picosecond and low jitter pulse generation using monolithic mode locked lasers. Applications including frequency comb generation for
10 Gbit/s WDM transmission at 1.3 and 1.55 µm, or microwave signal generation for radio-over-fibre are being investigated.
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QDSign : Guided wave devices for signal processing
Quantum dot based gain media exhibit enhanced non-linear effects, well suited e.g. for all optical signal processing. Very efficient four wave mixing
in optical amplifiers is exploited to modify the light group index, which allows the achievement of controllable optical delay lines at room temperature.
Enhanced electro-optic Pockels effect has been demonstrated in QD based waveguides, over a very wide optical bandwidth opening the way to the achievement
of efficient wide band electro-optic modulators.
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Metaphot: Novel concepts in guided wave optics : metaphotonics for telecom applications:
The use of left-handed metamaterials on III-V substrates is very attractive as it should be possible to incorporate gain layers to compensate for the
optical losses arising from the metallic resonators. It should indeed be possible to use a guided wave configuration with a core waveguide made of
quantum wells or dots where gain is achieved by electrical injection.
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Members
Contacts
And also...
PublicationsPublication in journals
- Optical pulse generation in single section InAs/GaAs quantum dot edge emitting lasers under continuous wave operation , R. Rosales, K. Merghem, C. Calo, I. Krestnikov, A. Martinez, A. Ramdane, Appl. Phys. Lett. 99, 1 (2012)
- Optical Frequency Comb Generation Using Dual-Mode Injection-Locking of Quantum-Dash Mode-Locked Lasers: Properties and Applications
, E. Sooudi, G. Huyet, J. McInerney, F. Lelarge, K. Merghem, R. Rosales, A. Martinez, A. Ramdane, S. Hegarty, IEEE J. Quant. Electron. 48 (10), 1327 (2012)
- Mode coherence measurements across a 1.5 THz spectral bandwidth of a passively mode-locked quantum dash laser , R.T. Watts, R. Rosales, F. Lelarge, A. Ramdane, L. P. Barry, Optics Express 37 (9), 1499 (2012)
- High performance mode locking characteristics of single section quantum dash lasers
, R. Rosales, S.G. Murdoch, R.T. Watts, K. Merghem, A. Martinez, F. Lelarge, A. Accard, L. P. Barry, A. Ramdane, Optics Express 20 (8), 8649 (2012)
- Timing jitter from the optical spectrum in semiconductor passively mode locked lasers
, R. Rosales, K. Merghem, A. Martinez, F. Lelarge, A. Accard, A. Ramdane, Optics Express 20(8), 9151 (2012)
- Injection-Locking Properties of InAs/InP-Based Mode-Locked Quantum-Dash Lasers at 21 GHz , E. Sooudi, G. Huyet, J. McInerney, F. Lelarge, K. Merghem, R. Rosales, A. Martinez, A. Ramdane, S. Hegarty, IEEE Phot. Techn. Lett. 23, 1544 (2011)
- Ultrafast Gain and Refractive Index Dynamics in AlInAs/AlGaAs Quantum Dot Based Semiconductor Optical Amplifiers Operating at 800 nm
, J. Pulka, T. Piwonski, G. Huyet, J. Houlihan, S. Barbay, A. Martinez, K. Merghem, A. Lemaitre, A. Ramdane, R. Kuszelewicz, IEEE J. Quant. Electron. 47, 1094 (2011)
- Observation of harmonic-mode-locking in a mode-locked InAs/InP-based quantum-dash laser with CW optical injection
, E. Sooudi, G. Huyet, J. McInerney, F. Lelarge, K. Merghem, A. Martinez, A. Ramdane, S. Hegarty, IEEE Phot. Techn. Lett. 23, 549 (2011)
- Temperature Dependence of Dynamic Properties and Tolerance to Optical Feedback of High-Speed 1.3-?m DFB Quantum-Dot Lasers
, S. Azouigui, D.-Y. Cong, A. Martinez, K. Merghem, Q. Zou, J.-G. Provost, B. Dagens, M. Fischer, F. Gerschutz, J. Koeth, I. Krestnikov, A. R. Kovsh, A. Ramdane, IEEE Phot. Techn. Lett. , 582 (2011)
- Single step measurement of optical transmitters Henry factor using sinusoidal optical phase modulations , J.-G. Provost, A. Martinez, A. Shen, A. Ramdane, Optics Express 19, 21396 (2011)
- Feedback-resistant p-type doped InAs/InP quantum-dash distributed feedback lasers for isolator-free 10 Gb/s transmission at 1.55 ?m
, Q. Zou, K. Merghem, S. Azouigui, A. Martinez, A. Accard, N. Chimot, F. Lelarge, A. Ramdane, Appl. Phys. Lett. , 231115 (2010)
- Low phase noise all-optical oscillator using quantum dash modelocked laser
, A. Akrout, A. Shen, A. Enard, G.-H. Duan, F. Lelarge, A. Ramdane, Electron. Lett. 46, 73 (2010)
- Separate Error-Free Transmission of Eight Channels at 10 Gb/s Using Comb Generation in a Quantum-Dash-Based Mode-Locked Laser
, A. Akrout, A. Shen, R. Brenot, F. Van Dijk, O. Legouezigou, F. Pommereau, F. Lelarge, A. Ramdane, G.-H. Duan, IEEE Phot. Techn. Lett. 21, 1746 (2009)
- Low Noise Performance of Passively Mode-Locked Quantum-Dash-based Laser Under External Optical Feedback
, K. Merghem, R. Rosales, S. Azouigui, A. Akrout, A. Martinez, F. Lelarge, G.-H. Duan, G. Aubin, A. Ramdane, Appl. Phys. Lett. 95, 131111 (2009)
- High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications
, G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. Legouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, A. Ramdane, IEEE Trans. Electron Devices Bell Labs Technical journal 14, 63 (2009)
- Optical Feedback Tolerance of Quantum-Dot and Quantum-Dash Based Semiconductor Lasers Operating at 1.55 ?m
, S. Azouigui, B. Dagens, F. Lelarge, J.-G. Provost, D. Make, O. Legouezigou, A. Accard, A. Martinez, K. Merghem, F. Grillot, O. Dehaese, R. Piron, S. Loualiche, Q. Zou, A. Ramdane, IEEE J. Select. Topics Quant. 15 (3), 764 (2009)
- Confining light flow in weakly coupled waveguide arrays by structuring the coupling constant: towards discrete diffractive optics
, N. Belabas, S. Bouchoule, I. Sagnes, J. A. Levenson, C. Minot, J.-M. Moison, Optics Express 17, 3148 (2009)
- Excitable phase slips in an injection-locked single-mode quantum-dot laser
, D.-Y. Cong, B. Kelleher, D. Goulding, S. Hegarty, G. Huyet, D. Cong, A. Martinez, A. Lemaitre, A. Ramdane, M. Fischer, F. Gerschutz, J. Koeth, Opt. Lett. 34, 440 (2009)
- Pulse generation at 346 GHz using a passively mode locked quantum-dash-based laser at 1.55 ?m
, K. Merghem, A. Akrout, A. Martinez, F. Lelarge, G.-H. Duan, G. Aubin, A. Ramdane, Appl. Phys. Lett. 94, 21107 (2009)
- Variable optical delays at 1.55 ?m using fast light in an InAs/InP quantum dash based semiconductor optical amplifier , A. Martinez, G. Aubin, F. Lelarge, R. Brenot, J. Landreau, A. Ramdane, Appl. Phys. Lett. 93, 91116 (2008)
- Experimental Investigation of the Timing Jitter in Self-Pulsating Quantum-Dash Lasers operating at 1.55 ?m
, J.-P. Tourrenc, A. Akrout, K. Merghem, A. Martinez, F. Lelarge, A. Shen, G.-H. Duan, A. Ramdane, Optics Express 16, 17706 (2008)
- Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser
, K. Merghem, A. Akrout, A. Martinez, G. Moreau, J.-P. Tourrenc, F. Lelarge, F. Van Dijk, G.-H. Duan, G. Aubin, A. Ramdane, Optics Express 16, 16675-16683 (2008)
- Dynamic properties of InAs/InP (311)B quantum dot Fabry-Perot lasers emitting at 1.52 ?m
, A. Martinez, F. Martin, K. Tavernier, K. Merghem, S. Bouchoule, G. Moreau, A. Ramdane, J.-G. Provost, F. Alexandre, F. Grillot, O. Dehaese, R. Piron, S. Loualiche, Appl. Phys. Lett. 93, 21101 (2008)
- Systematic investigation of InAs/InP quantum-dash based lasers under external optical feedback
, O. Le Gouezigou, S. Azouigui, B. Dagens, F. Lelarge, A. Accard, D. Make, O. Legouezigou, K. Merghem, A. Martinez, Q. Zou, A. Ramdane, Appl. Phys. Lett. 92, 201106 (2008)
- Temperature insensitive linewidth enhancement factor of p-type doped InAs/GaAs quantum-dot lasers emitting at 1.3 ?m
, D.-Y. Cong, A. Martinez, K. Merghem, A. Ramdane, J.-G. Provost, M. Fischer, I. Krestnikov, A. R. Kovsh, Appl. Phys. Lett. 92, 191109 (2008)
- Recent advances in long wavelength quantum dot based lasers , A. Ramdane, A. Martinez, S. Azouigui, D.-Y. Cong, K. Merghem, A. Akrout, C. Gosset, G. Moreau, F. Lelarge, B. Dagens, J.-G. Provost, A. Accard, O. Legouezigou, I. Krestnikov, A. R. Kovsh, M. Fischer, Proc. SPIE 6900, 690008 (2008)
- Polarization dependence of the effect of external optical feedback on semiconductor lasers , Q. Zou, S. Azouigui, A. Ramdane, B.-E. Benkelfat, Proc. SPIE 6824, 68412 (2008)
- Coherence collapse and low-frequency fluctuations in quantum-dash based lasers emitting at 1.57 µm , S. Azouigui, B. Kelleher, S. Hegarty, G. Huyet, B. Dagens, F. Lelarge, A. Accard, D. Make, O. Legouezigou, K. Merghem, A. Martinez, Q. Zou, A. Ramdane, Optics Express , 14155 (2007)
- Optimisation of alpha-factor for quantum dot InAs/GaAs Fabry-Perot lasers emitting at 1.3 mu m
, D.-Y. Cong, A. Martinez, K. Merghem, G. Moreau, A. Lemaitre, J.-G. Provost, O. Le Gouezigou, M. Fischer, I. Krestnikov, A. R. Kovsh, A. Ramdane, Electron. Lett. 43, 222 (2007)
- InGaAs/GaAs QD-based electro-optic modulator with over 100 nm bandwidth at 1.55 mu m
, G. Moreau, A. Martinez, D.-Y. Cong, K. Merghem, A. Miard, A. Lemaitre, P. Voisin, A. Ramdane, Electron. Lett. 43, 124 (2007)
- Demonstration of a 1.51 μm InAs/InP(311)B Single-Mode QD Laser Operating Under Continuous Waves
, G. Moreau, K. Merghem, A. Martinez, S. Bouchoule, A. Ramdane, R. Piron, F. Grillot, O. Dehaese, E. Homeyer, K. Tavernier, S. Loualiche, P. Berdaguer, F. Pommereau, IEE Proceedings-Optoelectronic IET Optoelectron., 255 (2007)
- 1516 nm room temperature CW operation of a quantum dot InAs/InP(311)B single-mode laser , G. Moreau, K. Merghem, A. Martinez, S. Bouchoule, A. Ramdane, F. Grillot, R. Piron, O. Dehaese, E. Homeyer, K. Tavernier, S. Loualiche, P. Berdaguer, F. Pommereau, Electron. Lett. 43 (10), 571 (2007)
- Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 ?m
, G. Moreau, A. Martinez, D.-Y. Cong, K. Merghem, A. Miard, A. Lemaitre, P. Voisin, A. Ramdane, I. Krestnikov, A. R. Kovsh, M. Fischer, J. Koeth, Appl. Phys. Lett. 91, 91118 (2007)
- Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.55 ?m , S. Azouigui, B. Dagens, F. Lelarge, J.-G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, A. Ramdane, IEEE Phot. Techn. Lett. 19 (15), 1181 (2007)
- Sub-picosecond pulse generation at 134 GHz using a quantum dot based Fabry-Perot laser emitting at 1.56 ?m , C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, J. Landreau, F. Lelarge, A. Ramdane, Appl. Phys. Lett. 88, (2006)
- Phase-amplitude Characterization of a high repetition rate Quantum Dash Passively Mode-Locked Laser , C. Gosset, K. Merghem, G. Moreau, A. Martinez, G. Aubin, J.-L. Oudar, A. Ramdane, F. Lelarge, Opt. Lett. 31, 1848 (2006)
- Optimization and characterization of InGaAsN/GaAs quantum-well ridge diodes for high frequency operation
, S. Bonnefont, B. Messant, M. Boutillier, O. Gauthier-Lafaye, F. Lozes, A. Martinez, V. Sallet, K. Merghem, L. Ferlazzo, J.-C. Harmand, A. Ramdane, J.-G. Provost, B. Dagens, L. Le Gouezigou, J. Landreau, X. Marie, Opt. Quant. Electron. 38, 313 (2006)
- Sub-Picosecond Pulse Generation at 134 GHz and Low Radiofrequency Spectral Linewidth In Quantum Dash-Based Fabry-Perot Lasers Emitting at 1.5 ?m , C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, J. Landreau, F. Lelarge, A. Ramdane, Electron. Lett. 42, 91 (2006)
- All-optical Wavelength Conversion by EAM With Shifted Bandpass Filter for High Bit-Rate Networks , N. El Dahdah, R. Coquille, B. Charbonnier, E. Pincemin, C. Kazmierski, J. Decobert, A. Vedadi, G. Aubin, A. Ramdane, IEEE Phot. Techn. Lett. 18 n?1, 61 (2006)
- Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55?m , G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poigt, A. Accard, F. Pommereau, Appl. Phys. Lett. 89, 241123 (2006)
- High extinction ratio and high temperature 2.5Gb/s floor free 1.3 ?m transmission with a directly modulated quantum- dot laser , B. Dagens, A. Martinez, J.-G. Provost, D. Make, L. Le Gouezigou, L. Ferlazzo, A. Lemaitre, K. Merghem, A. Ramdane, B. Thedrez, IEEE Phot. Techn. Lett. 18 n?4, 589 (2006)
- Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers , K. Veselinov, F. Grillot, P. Miska, E. Homeyer, P. Caroff, C. Platz, J. Even, X. Marie, O. Dehaese, S. Loualiche, A. Ramdane, Opt. Quant. Electron. 38, 369 (2006)
- Static and Dynamic Measurements of the alpha-factor of 5- Quantum-Dot-Layer Single-Mode Lasers Emitting at 1.3?m on GaAs , A. Martinez, J.-G. Provost, A. Lemaitre, O. Gauthier-Lafaye, K. Merghem, L. Ferlazzo, C. Dupuis, L. Le Gouezigou, A. Ramdane, Appl. Phys. Lett. 86, 211115 (2005)
- Comparison of InAs quantum dot lasers emitting at 1.55 ?m under optical and electrical injection , C. Platz, C. Paranthoen, P. Caroff, N. Bertru, C. Labbe, J. Even, O. Dehaese, H. Folliot, A. Le Corre, S. Loualiche, G. Moreau, J.-C. Simon, A. Ramdane, Semicond. Sci. Technol. 20, 459 (2005)
- New design of InGaAs/InGaAlAs MQW electro-absorption modulator for high speed all optical wavelength conversion , N. El Dahdah, J. Decobert, A. Shen, S. Bouchoule, C. Kazmierski, G. Aubin, B.-E. Benkelfat, A. Ramdane, IEEE Phot. Techn. Lett. , 2302 (2004)
- High frequency performance of 3-quantum well GaInNAs/GaAs ridge waveguide lasers emitting at 1.35?m , A. Martinez, V. Sallet, D. Jahan, J.-G. Provost, J. Landreau, L. Le Gouezigou, B. Dagens, L. Ferlazzo, J.-C. Harmand, A. Ramdane, IEE Proceedings-Optoelectronic , 425 (2004)
- Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates , N. El Dahdah, G. Aubin, J.-C. Harmand, A. Ramdane, A. Shen, F. Devaux, A. Garreau, B.-E. Benkelfat, Appl. Phys. Lett. 84, 4268 (2004)
- 9.7 GHz small-signal bandwidth of 3-quantum well GaInAsN/GaAs laser diodes operating at 1.35 µm , A. Martinez, J.-G. Provost, B. Dagens, V. Sallet, D. Jahan, K. Merghem, L. Ferlazzo, J.-C. Harmand, A. Ramdane, Electron. Lett. 40, 425 (2004)
- Fiber optic applications of multiple quantum well electroabsorption modulators , A. Ramdane, F. Devaux, N. El Dahdah, G. Aubin, Annals of Telecommunications 58, 9 (2003)
- High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes , A. Caliman, A. Ramdane, D. Meichenin, L. Ferlazzo, B. Sermage, G. Ungaro, L. Travers, J.-C. Harmand, Electron. Lett. 38, 710 (2002)
- Tunable distributed Bragg reflector laser-electroabsorption modulator based on identical active layer monolithic integration , A. Ramdane, D. Meichenin, E. Vergnol, H. Sik, A. Ougazzaden, Electron. Lett. 35, 1637 (1999)
Publications in books
- Quantum Dot-based Mode-locked Lasers and Applications , A. Martinez, C. Gosset, K. Merghem, G. Moreau, F. Lelarge, A. Ramdane, Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics , Chap. 20 (2008)
Contracts and projects
International Projects
PROPHET : Postgraduate Research on Photonics as an Enabling Technology
Reference contract : Program: FP7 - The People Programme - Initial Training Networks
LPN leader(s): Abderrahim Ramdane, Anthony Martinez Main goals : Quantum dot based photonic devices for telecommunication and sensing applications (2011-2015)
ILNACS : Nanostructures of Compound Semiconductors (Growth, properties, devices)
Reference contract : Laboratoire International Associé (LIA) CNRS - Université de Montpellier - INSA Toulouse / Académie des Sciences de Russie - Fondation Russe pour la Recherche Fondamentale
LPN leader(s): Frank Glas Main goals : Organize and develop scientific collaborations between the CNRS laboratories and the laboratories and institutes of the Russian Academy of Sciences based in Saint Petersburg in the domains of growth and study of the physical properties of nanostructures of compound semiconductors, and of compounds based on the latter. (2010-2013)
ZODIAC : Zero Order Dimension based Industrial components Applied to telecommunications
Reference contract : NMP 2004-IST-NMP-3
LPN leader(s): Abderrahim Ramdane, Anthony Martinez Main goals : Development directly modulated lasers and optical amplifiers based on InAs/GaAs and InAs/InP quantum dots for telecommunication applications (2005-2008). (2005-2008)
International Networks
SANDIE : Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics
Reference contract : Programme: FP6 – NMP- Network of Excellence
Coordinator, Partner(s) : M. Grundman (Universite de Leipzig
), LPN leader(s): Aristide Lemaitre, Abderrahim Ramdane Main goals : Quantum dot based lasers for emission at 1.3 and 1.55 µm (2004-2008)
EPIXnet : European Network of Excellence on Photonic Integrated Components and Circuits
Reference contract : Program: FP6 - IST-2002-2.3.2.2 Optical, opto-electronic, & photonic functional components Network of Excellence
LPN leader(s): Anthony Martinez, Abderrahim Ramdane, Anne Talneau Main goals : Structuring the photonic integration research community, and stimulate new opportunities for photonic integration in a wide range of application domains. (2004-2008)
ANR non thématiques
EXTREME : Resonant excitation of semiconductor quantum dots for the generation of non classical states of light
Reference contract : ANR Blanc
Coordinator, Partner(s) : V. Voliotis (INSP
), LPN leader(s): Aristide Lemaitre Main goals : (2011-2014)
TELDOT : Telecom Applications based on Quantum Dot devices
Reference contract : ANR VERSO
LPN leader(s): Abderrahim Ramdane, Anthony Martinez Main goals : Développement de lasers à blocage de mode à base de boîtes quantiques (BQs) présentant un faible bruit pour la génération de peigne de fréquence à 1,3 µm et 1,55 µm et compatible avec la modulation directe à 10 Gb/s. Développement de lasers à blocage de mode à base de BQs émettant à 1,55 µm, présentant un faible bruit et fonctionnant à 60 GHz pour la radio sur fibre (systèmes sans fils). Site web du projet TELDOT: http://www.teldot.fr/ (2009-2013)
Past and current Internship Training
PhDsInternship Training
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