Laboratory for Photonics and Nanostructures
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Elaboration and Physics of Epitaxial Structures
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ELPHYSE

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QD

Quantum Dots

Nanowires III-V Nanowires
HeterOpSi HeterOpSi : III-V Heterostructures for Optoelectronics on Silicon

MaSCaVert PHeW : Planar heterostructures for wave engineering

Relax AMoN : Analysis and modelling of nanostructures

SemiMag SemiMag : Semimagnetic Semiconductors for Spin Electronics

ELPHYSE group fabricates epitaxial structures and studies their physical properties. Epitaxial structures are stackings of thin crystalline layers of semiconducting materials, which should ultimately be integrated in optoelectronic and microelectronic devices. Our research activities are mostly experimental, with a theoretical component. We operate powerful equipment for fabrication (molecular beam epitaxy, metalorganic vapour phase epitaxy, epitaxial bonding) and for structural, chemical, electronic and optical investigations (high resolution X ray diffraction, transmission electron microscopy, nanoanalysis, Raman spectroscopy, photoluminescence).

We study a wide spectrum of objects: III-V semiconducting alloys, strained epitaxial structures, quantum boxes and quantum dots, micro and nanostructures for photonics, materials for spintronics. A large part of our research is devoted to the development of new materials or objects: original alloys, semimagnetic semiconductors, complex epitaxial structures, novel substrates, membranes…

We study their formation, their structure, their stability and defects, and their optical and electronic properties. Many of these studies involves collaborating with other teams of the Laboratory (most studies of which rely on the structures which we develop) as well as with numerous French and international academic and industrial partners.

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Puce Highlights

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Puce Members

Group leader

 Glas Frank  (+33) 1 69 63 60 79  

Full-time staff

 Beaudoin Gregoire  (+33) 1 69 63 62 45  
 Gogneau Noelle  (+33) 1 69 63 61 75  
 Gomez Carmen  (+33) 1 69 63 60 66  
 Harmand Jean-Christophe  (+33) 1 69 63 60 81  
 Largeau Ludovic  (+33) 1 69 63 61 74  
 Lemaître Aristide  (+33) 1 69 63 60 72  
 Mauguin Olivia  (+33) 1 69 63 61 07  
 Oehler Fabrice  (+33) 1 69 63 63 76  
 Patriarche Gilles  (+33) 1 69 63 61 73  
 Sagnes Isabelle  (+33) 1 69 63 61 71  
 Travers Laurent  (+33) 1 69 63 60 65  

Trainees, PhDs, post-docs, guests

 Pantzas Konstantinos  (+33) 1 69 63 60 54  
 Hioul Alima  (+33) 1 69 63 61 75  
 Vu Thi Nhung  (+33) 1 69 63 60 99  
 Fourreau Yohan  (+33) 1 69 63 61 73  
 Jamond Nicolas  (+33) 1 69 63 60 83  
 Jegorel Théo  (+33) 1 69 63 61 10  
 Kumaresan Vishnuvarthan  (+33) 1 69 63 61 10  
 Martin Aude  (+33) 1 69 63 61 71  
 Priante Giacomo  (+33) 1 69 63 61 10  
 Himwas Chalermchai  (+33) 1 69 63 60 53  
 Lucot Damien  (+33) 1 69 63 61 25  
 Scaccabarozzi Andrea  (+33) 1 69 63 63 53  
 Morassi Martina  (+33) 1 69 63 61 75  

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Puce Patents

  • Vertical External Cavity Surface Emitting Laser devices allowing high coherence, high power and large tunability, A. Garnache, M. Myara, I. Sagnes, G. Beaudoin, L. Ferrières, V. Lecocq, S. Denet, EP14305752, (2014-05-21)
  • Substrat comprenant une couche de silicium et/ou de germanium et un ou plusieurs nanofils d'orientation perpendiculaire à la surface du substrat (N° 1256374). Déposants : Saint Gobain et CNRS, Y. Cohin, E. Sondergard, J.-C. Harmand, 1256374, (2012-07-03)
  • Sources et capteurs de lumiere comprenant au moins une microcavite a mode Tamm plasmonique localise (International Application N°: PCT/FR1003/881), P. Senellart, A. Lemaître, S. Michaelis de Vasconcellos, O. Gazzano, J. Bellessa, O. Daniel, FR 1003/881 , (2010-09-30)
  • EPITAXIAL SOLID-STATE SEMICONDUCTING HETERO-STRUCTURES AND METHOD FOR MAKING SAME (International Application N°: PCT/FR2008/051669), G. Saint-Girons, L. Largeau, G. Patriarche, P. Regreny, G. Hollinger, FR 2008/051669, (2008-09-17)
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Puce Recent publications

Publication in journals
Publications in books
  • , F. Glas, Semiconductor nanowires I: Growth and theory (edited by A. Fontcuberta i Morral, S. A. Dayeh and C. Jagadish), in the Semiconductor and Semimetals series (Academic Press, Burlington) 93, 79 (2015)
  • , F. Glas, Wide band gap semiconductor nanowires: Vol. 1 Low-dimensionality effects and growth (éd. par V. Consonni et G. Feuillet) , 25 (2014)
  • , F. Glas, Lattice engineering: Technologies and applications, éd. par S. M. Wang (Pan Stanford Publishing, Singapore, 2012) 5, 189 (2012)
  • , J.-C. Harmand, F. Glas, G. Patriarche, M. Tchernycheva, C. Sartel, L. Liu, F. Jabeen, Advances in III-V semiconductor nanowires and nanodevices (ed. J. Li, D. Wang et R. R. LaPierre) 1, 68 (2011)
  • [PDF] , F. Glas, Mechanical stress on the nanoscale - simulation, material systems and characterization techniques (ed. M. Hanbücken, P. Müller, R. B. Wehrspohn) , 3 (2011)
  • , F. Glas, Contraintes mecaniques en micro, nano et optoelectronique (ed. par M. Mouis) , 77 (2006)
  • , F. Glas, Contraintes mecaniques en micro, nano et optoelectronique (ed. par M. Mouis) , 203 (2006)
  • , J.-C. Harmand, Dilute Nitride Semiconductors, by M. Henini, Elsevier 2005 , (2005)
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