While the mechanical and optical integration of III-V semiconductors on Si have been repeatedly addressed in twenty years of silicon photonics, the possibility of electric and electronic integration of these hybrid engineered materials at the atomic scale has been left unexplored, despite the potentially immense gains in terms of thermal-budget improvement, chip power consumption, footprint and the integration of control electronics to boost data transfer rates. Adding this functionality to the actual devices design will allow exploiting the full potential of 3D integration.
LPN has developed oxide-free bonding of III-V materials on Si , and has recently demonstrated electrical transport across such an interface . LPN has the technology facility and characterization equipments for the elaboration of hybrid interfaces, and for the fabrication of photonic hybrid devices including such an interface. The group of Pr. Dollfus in IEF has the expertise for the simulation of electrical transport across the interface. IEF and LPN will merge in January 2016 to create the Centre de Nanosciences et de Nanotechnologies, C2N, on the Plateau de Saclay.
This PhD work proposes to elaborate III-V/Si heterointerfaces by the bonding technology, and to investigate, understand, and quantify electrical transport across these hybrid interfaces, for several III-V materials and several doping concentration. This transport behaviour will first be simulated, and then experimentally characterized on the fabricated interfaces. Then an hybrid photonic laser will be fabricated including an electrically injected interface by placing one electrode on the Si guiding layer. Such an electrical scheme is expected to greatly improve the thermal behaviour, still poor in the actual hybrid lasers.
The main objective of this PhD work is to demonstrate the operation of an hybrid III-V/Si laser emitting at 1.55µm, under electrical injection through the hybrid interface.
For this goal, the PhD work will be involved in :
- Elaboration by bonding technology and characterization of III-V/Si conductive hybrid interfaces;
- Simulation and experimental characterization of the interface transport behaviour;
- Design, fabrication and characterization of an hybrid laser operating under electrical injection through the interface.
At the end of this PhD work, the candidate will have acquired knowledge and expertise in optoelectronics both in electronics and photonics, photonic hybrid devices design fabrication an characterization, and nanotechnology covering both the III-V semiconductor materials and their nanostructuration.
 A. Talneau et al., Appl. Phys. Lett. 102, 212101 (2013)
 K.Pantzas et al., IPRM (2014)
K.Tanabe, S.Iwamoto and Y.Arakawa, IEICE Elec.Ex., 8, 596 (2011)
K.Tanabe, K.Watanabe and Y.Arakawa, Scient.Rep. 2, 349 (2012)
The financial support
is the doctoral allocation from EDOM.
Also on ADUM.fr
Additional information : contact : Anne TALNEAU