Laboratory for Photonics and Nanostructures

Personal page of: > Abderrahim Ramdane

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• research
  • Fabrication and Physics of Epitaxial Structures (ELPHYSE)
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email:
Phone: (+33) 1 69 63 61 50
Groupe: PHOTEL
Actions: GuiWac , AMoN , SysTelO , SLMetro , SLTrans , Collab , Nanowires
Thèmes: CMEP , PHEH
Contrats: IQDOT, GSQ, AS 13, SANDIE, AHTOS, OPSAVE-MEA, ePIX, Puce opto-atomique, TELDOT, NEWPVONGLASS, ZODIAC , EPIXnet, PROPHET , VESUVE, JASMIN
Laboratoire de Photonique et de Nanostructures from 2001-01-01

Publications

Publications

• Optical pulse generation in single section InAs/GaAs quantum dot edge emitting lasers under continuous wave operation R. Rosales, K. Merghem, C. Calo, I. Krestnikov, A. Martinez, A. Ramdane, Appl. Phys. Lett. 99, 1 (2012)
• Optical Frequency Comb Generation Using Dual-Mode Injection-Locking of Quantum-Dash Mode-Locked Lasers: Properties and Applications E. Sooudi, G. Huyet, J. McInerney, F. Lelarge, K. Merghem, R. Rosales, A. Martinez, A. Ramdane, S. Hegarty, IEEE J. Quant. Electron. 48 (10), 1327 (2012)
• Mode coherence measurements across a 1.5 THz spectral bandwidth of a passively mode-locked quantum dash laser R.T. Watts, R. Rosales, F. Lelarge, A. Ramdane, L. P. Barry, Optics Express 37 (9), 1499 (2012)
• High performance mode locking characteristics of single section quantum dash lasers R. Rosales, S.G. Murdoch, R.T. Watts, K. Merghem, A. Martinez, F. Lelarge, A. Accard, L. P. Barry, A. Ramdane, Optics Express 20 (8), 8649 (2012)
• Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaN L. Magdenko, G. Patriarche, D. Troadec, O. Mauguin, E. Morvan, M.-A. di Forte-Poisson, K. Pantzas, A. Ougazzaden, A. Martinez, A. Ramdane, J. Vac. Sci. Technol. B 30, 22205 (2012)
• Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range J. Pulka, T. Piwonski, G. Huyet, J. Houlihan, E. Semenova, A. Lemaitre, K. Merghem, A. Martinez, A. Ramdane, Appl. Phys. Lett. 100, 071107 (2012)
• Timing jitter from the optical spectrum in semiconductor passively mode locked lasers R. Rosales, K. Merghem, A. Martinez, F. Lelarge, A. Accard, A. Ramdane, Optics Express 20(8), 9151 (2012)
• Injection-Locking Properties of InAs/InP-Based Mode-Locked Quantum-Dash Lasers at 21 GHz E. Sooudi, G. Huyet, J. McInerney, F. Lelarge, K. Merghem, R. Rosales, A. Martinez, A. Ramdane, S. Hegarty, IEEE Phot. Techn. Lett. 23, 1544 (2011)
• InAs/InP Quantum-Dot Passively Mode-Locked Lasers for 1.55-mu m Applications R. Rosales, K. Merghem, A. Martinez, A. Akrout, J.-P. Tourrenc, A. Accard, F. Lelarge, A. Ramdane, IEEE J. Select. Topics Quant. 17, 1292 (2011)
• Ultrafast Gain and Refractive Index Dynamics in AlInAs/AlGaAs Quantum Dot Based Semiconductor Optical Amplifiers Operating at 800 nm J. Pulka, T. Piwonski, G. Huyet, J. Houlihan, S. Barbay, A. Martinez, K. Merghem, A. Lemaitre, A. Ramdane, R. Kuszelewicz, IEEE J. Quant. Electron. 47, 1094 (2011)
• Carrier wavefunction control in a dilute nitride-based quantum well-a quantum dot tunnel injection system for 1.3 mu m emission W. Rudno-Rudzinski, K. Ryczko, G. Sek, J. Misiewicz, E. Semenova, A. Lemaitre, A. Ramdane, Semicond. Sci. Technol. 26, 85004 (2011)
• Observation of harmonic-mode-locking in a mode-locked InAs/InP-based quantum-dash laser with CW optical injection E. Sooudi, G. Huyet, J. McInerney, F. Lelarge, K. Merghem, A. Martinez, A. Ramdane, S. Hegarty, IEEE Phot. Techn. Lett. 23, 549 (2011)
• Temperature Dependence of Dynamic Properties and Tolerance to Optical Feedback of High-Speed 1.3-?m DFB Quantum-Dot Lasers S. Azouigui, D.-Y. Cong, A. Martinez, K. Merghem, Q. Zou, J.-G. Provost, B. Dagens, M. Fischer, F. Gerschutz, J. Koeth, I. Krestnikov, A. R. Kovsh, A. Ramdane, IEEE Phot. Techn. Lett. , 582 (2011)
• Temperature Dependence of Dynamic Properties and Tolerance to Optical Feedback of High-Speed 1.3-mu m DFB Quantum-Dot Lasers S. Azouigui, D.-Y. Cong, A. Martinez, K. Merghem, Q. Zou, J.-G. Provost, B. Dagens, M. Fischer, F. Gerschutz, J. Koeth, I. Krestnikov, G. Scherrer, A. Ramdane, IEEE Photonics Technol. Lett. 23, 582 (2011)
• Observation of Harmonic-Mode-Locking in a Mode-Locked InAs/InP-Based Quantum-Dash Laser With CW Optical Injection E. Sooudi, G. Huyet, J. McInerney, F. Lelarge, K. Merghem, A. Martinez, A. Ramdane, S. Hegarty, IEEE Photonics Technol. Lett. 23, 549 (2011)
• Single step measurement of optical transmitters Henry factor using sinusoidal optical phase modulations J.-G. Provost, A. Martinez, A. Shen, A. Ramdane, Optics Express 19, 21396 (2011)
• Feedback-resistant p-type doped InAs/InP quantum-dash distributed feedback lasers for isolator-free 10 Gb/s transmission at 1.55 ?m Q. Zou, K. Merghem, S. Azouigui, A. Martinez, A. Accard, N. Chimot, F. Lelarge, A. Ramdane, Appl. Phys. Lett. , 231115 (2010)
• Submicron beam x-ray diffraction of nanoheteroepitaxily grown GaN: experimental challenges and calibration procedures P. Bonanno, S. Gautier, A. Sirenko , A. Ougazzaden, A. Kazimirov, Z. Cai , J. Martin, W. H. Goh, A. Martinez, G. Patriarche, A. Ramdane, L. Le Gratiet, T. Moudakir, B. Assouar, Nucl. Instr. Meth. A 268 issue 3-4, 320 (2010)
• Low phase noise all-optical oscillator using quantum dash modelocked laser A. Akrout, A. Shen, A. Enard, G.-H. Duan, F. Lelarge, A. Ramdane, Electron. Lett. 46, 73 (2010)
• Relaxation characteristics of quantum-dash-based semiconductor lasers P. Mandel, S. Azouigui, A. Ramdane, Appl. Phys. Lett. 95, (2009)
• Separate Error-Free Transmission of Eight Channels at 10 Gb/s Using Comb Generation in a Quantum-Dash-Based Mode-Locked Laser A. Akrout, A. Shen, R. Brenot, F. Van Dijk, O. Legouezigou, F. Pommereau, F. Lelarge, A. Ramdane, G.-H. Duan, IEEE Phot. Techn. Lett. 21, 1746 (2009)
• Separate Error-Free Transmission of Eight Channels at 10 Gb/s Using Comb Generation in a Quantum-Dash-Based Mode-Locked Laser A. Akrout, A. Shen, R. Brenot, F. Van Dijk, O. Legouezigou, F. Pommereau, F. Lelarge, A. Ramdane, G.-H. Duan, IEEE Photonics Technol. Lett. 21, 1746 (2009)
• Slow and fast light in quantum dot based semiconductor optical amplifiers A. Martinez, J.-G. Provost, G. Aubin, R. Brenot, J. Landreau, F. Lelarge, A. Ramdane, C.R. Phys. 10, 1000 (2009)
• Low Noise Performance of Passively Mode-Locked Quantum-Dash-based Laser Under External Optical Feedback K. Merghem, R. Rosales, S. Azouigui, A. Akrout, A. Martinez, F. Lelarge, G.-H. Duan, G. Aubin, A. Ramdane, Appl. Phys. Lett. 95, 131111 (2009)
• High performance InP-based quantum dash semiconductor mode-locked lasers for optical communications G.-H. Duan, A. Shen, A. Akrout, F. Van Dijk, F. Lelarge, F. Pommereau, O. Legouezigou, J.-G. Provost, H. Gariah, F. Blache, F. Mallecot, K. Merghem, A. Martinez, A. Ramdane, IEEE Trans. Electron Devices Bell Labs Technical journal 14, 63 (2009)
• Low noise performance of passively mode locked quantum-dash-based lasers under external optical feedback K. Merghem, R. Rosales, S. Azouigui, A. Akrout, A. Martinez, F. Lelarge, G.-H. Duan, G. Aubin, A. Ramdane, Appl. Phys. Lett. 95, (2009)
• Electronic structure properties of the In(Ga)As/GaAs quantum dot-quantum well tunnel-injection system G. Sek, J. Andrzejewski, K. Ryczko, P. Poloczek, J. Misiewicz, E. Semenova, A. Lemaitre, G. Patriarche, A. Ramdane, Semicond. Sci. Technol. 24, (2009)
• Optical Feedback Tolerance of Quantum-Dot and Quantum-Dash Based Semiconductor Lasers Operating at 1.55 ?m S. Azouigui, B. Dagens, F. Lelarge, J.-G. Provost, D. Make, O. Legouezigou, A. Accard, A. Martinez, K. Merghem, F. Grillot, O. Dehaese, R. Piron, S. Loualiche, Q. Zou, A. Ramdane, IEEE J. Select. Topics Quant. 15 (3), 764 (2009)
• Towards a monolithic optical cavity for atom detection and manipulation S. Gleyzes, A. El Amili, R.A. Cornelussen, P. Lalanne, C.I. Westbrook, A. Aspect, J. Esteve, G. Moreau, A. Martinez, X. Lafosse, L. Ferlazzo, J.-C. Harmand, D. Mailly, A. Ramdane, Eur. Phys. J. D 53, 107 (2009)
• Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 mu m S. Azouigui, B. Dagens, F. Lelarge, J.-G. Provost, D. Make, O. Le Gouezigou, A. Accard, A. Martinez, K. Merghem, F. Grillot, O. Dehaese, R. Piron, S. Loualiche, Q. Zou, A. Ramdane, IEEE J. Select. Topics Quant. 15, 764 (2009)
• Room temperature free carrier tunneling in dilute nitride based quantum well - quantum dot tunnel injection system for 1.3 mu m W. Rudno-Rudzinski, G. Sek, K. Ryczko, M. Syperek, J. Misiewicz, E. Semenova, A. Lemaitre, A. Ramdane, Appl. Phys. Lett. 94, 171906 (2009)
• Excitable phase slips in an injection-locked single-mode quantum-dot laser D.-Y. Cong, B. Kelleher, D. Goulding, S. Hegarty, G. Huyet, D. Cong, A. Martinez, A. Lemaitre, A. Ramdane, M. Fischer, F. Gerschutz, J. Koeth, Opt. Lett. 34, 440 (2009)
• Pulse generation at 346 GHz using a passively mode locked quantum-dash-based laser at 1.55 ?m K. Merghem, A. Akrout, A. Martinez, F. Lelarge, G.-H. Duan, G. Aubin, A. Ramdane, Appl. Phys. Lett. 94, 21107 (2009)
• Towards a monolithic optical cavity for atom detection and manipulation S. Gleyzes, A. El Amili, R.A. Cornelussen, P. Lalanne, C.I. Westbrook, A. Aspect, J. Esteve, G. Moreau, A. Martinez, X. Lafosse, L. Ferlazzo, J.-C. Harmand, D. Mailly, A. Ramdane, Eur. Phys. J. D 53, 107 (2009)
• Variable optical delays at 1.55 ?m using fast light in an InAs/InP quantum dash based semiconductor optical amplifier A. Martinez, G. Aubin, F. Lelarge, R. Brenot, J. Landreau, A. Ramdane, Appl. Phys. Lett. 93, 91116 (2008)
• Experimental Investigation of the Timing Jitter in Self-Pulsating Quantum-Dash Lasers operating at 1.55 ?m J.-P. Tourrenc, A. Akrout, K. Merghem, A. Martinez, F. Lelarge, A. Shen, G.-H. Duan, A. Ramdane, Optics Express 16, 17706 (2008)
• Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser K. Merghem, A. Akrout, A. Martinez, G. Moreau, J.-P. Tourrenc, F. Lelarge, F. Van Dijk, G.-H. Duan, G. Aubin, A. Ramdane, Optics Express 16, 16675-16683 (2008)
• Dynamic properties of InAs/InP (311)B quantum dot Fabry-Perot lasers emitting at 1.52 ?m A. Martinez, F. Martin, K. Tavernier, K. Merghem, S. Bouchoule, G. Moreau, A. Ramdane, J.-G. Provost, F. Alexandre, F. Grillot, O. Dehaese, R. Piron, S. Loualiche, Appl. Phys. Lett. 93, 21101 (2008)
• Systematic investigation of InAs/InP quantum-dash based lasers under external optical feedback O. Le Gouezigou, S. Azouigui, B. Dagens, F. Lelarge, A. Accard, D. Make, O. Legouezigou, K. Merghem, A. Martinez, Q. Zou, A. Ramdane, Appl. Phys. Lett. 92, 201106 (2008)
• Temperature insensitive linewidth enhancement factor of p-type doped InAs/GaAs quantum-dot lasers emitting at 1.3 ?m D.-Y. Cong, A. Martinez, K. Merghem, A. Ramdane, J.-G. Provost, M. Fischer, I. Krestnikov, A. R. Kovsh, Appl. Phys. Lett. 92, 191109 (2008)
• New approach of Nano-Selective Area Growth (NSAG) for a precise control of GaN nanodots grown by MOVPE J. Martin, A. Martinez, W. H. Goh, S. Gautier, N. Dupuis, L. Le Gratiet, J. Decobert, A. Ramdane, A. Ougazzaden, Mater. Sci. Eng. B 147 2-3, 114 (2008)
• Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis N. Dupuis, J. Decobert, P.-Y. Lagree, N. Lagay, F. Poingt, C. Kazmierski, A. Ramdane, A. Ougazzaden, J. Appl. Phys. 103, 113113 (2008)
• Recent advances in long wavelength quantum dot based lasers A. Ramdane, A. Martinez, S. Azouigui, D.-Y. Cong, K. Merghem, A. Akrout, C. Gosset, G. Moreau, F. Lelarge, B. Dagens, J.-G. Provost, A. Accard, O. Legouezigou, I. Krestnikov, A. R. Kovsh, M. Fischer, Proc. SPIE 6900, 690008 (2008)
• Polarization dependence of the effect of external optical feedback on semiconductor lasers Q. Zou, S. Azouigui, A. Ramdane, B.-E. Benkelfat, Proc. SPIE 6824, 68412 (2008)
• Coherence collapse and low-frequency fluctuations in quantum-dash based lasers emitting at 1.57 µm S. Azouigui, B. Kelleher, S. Hegarty, G. Huyet, B. Dagens, F. Lelarge, A. Accard, D. Make, O. Legouezigou, K. Merghem, A. Martinez, Q. Zou, A. Ramdane, Optics Express , 14155 (2007)
• Antimonide-based lasers and DFB laser diodes in the 2-2.7 µm wavelength range for absorption spectroscopy D. Barat, J. Angellier, A. Vicet, Y. Rouillard, L. Le Gratiet, S. Guilet, A. Martinez, A. Ramdane, Appl. Phys. B , (2007)
• Antimonide-based DFB lasers emitting above 2.6 µm D. Barat, J. Angellier, A. Vicet, Y. Rouillard, L. Le Gratiet, S. Guilet, A. Martinez, A. Ramdane, Electron. Lett. 43 23, 1281 (2007)
• Optimisation of alpha-factor for quantum dot InAs/GaAs Fabry-Perot lasers emitting at 1.3 mu m D.-Y. Cong, A. Martinez, K. Merghem, G. Moreau, A. Lemaitre, J.-G. Provost, O. Le Gouezigou, M. Fischer, I. Krestnikov, A. R. Kovsh, A. Ramdane, Electron. Lett. 43, 222 (2007)
• InGaAs/GaAs QD-based electro-optic modulator with over 100 nm bandwidth at 1.55 mu m G. Moreau, A. Martinez, D.-Y. Cong, K. Merghem, A. Miard, A. Lemaitre, P. Voisin, A. Ramdane, Electron. Lett. 43, 124 (2007)
• Demonstration of a 1.51 μm InAs/InP(311)B Single-Mode QD Laser Operating Under Continuous Waves G. Moreau, K. Merghem, A. Martinez, S. Bouchoule, A. Ramdane, R. Piron, F. Grillot, O. Dehaese, E. Homeyer, K. Tavernier, S. Loualiche, P. Berdaguer, F. Pommereau, IEE Proceedings-Optoelectronic IET Optoelectron., 255 (2007)
• 1516 nm room temperature CW operation of a quantum dot InAs/InP(311)B single-mode laser G. Moreau, K. Merghem, A. Martinez, S. Bouchoule, A. Ramdane, F. Grillot, R. Piron, O. Dehaese, E. Homeyer, K. Tavernier, S. Loualiche, P. Berdaguer, F. Pommereau, Electron. Lett. 43 (10), 571 (2007)
• Enhanced In(Ga)As/GaAs quantum dot based electro-optic modulation at 1.55 ?m G. Moreau, A. Martinez, D.-Y. Cong, K. Merghem, A. Miard, A. Lemaitre, P. Voisin, A. Ramdane, I. Krestnikov, A. R. Kovsh, M. Fischer, J. Koeth, Appl. Phys. Lett. 91, 91118 (2007)
• Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy J. Decobert, N. Dupuis, P.-Y. Lagree, N. Lagay, A. Ramdane, A. Ougazzaden, F. Poingt, C. Cuisin, C. Kazmierski, J. Cryst. Growth 298, 28 (2007)
• Characterization of InAs quantum wires on (00I)InP: Toward the realization of VCSEL structures with a stabilized polarization J.-M. Lamy, C. Levallois, A. Nakhar, P. Caroff, C. Paranthoen, R. Piron, A. Le Corre, A. Ramdane, S. Loualiche, Phys. Stat. Sol. (a) 204 (6), 1672 (2007)
• Tolerance to optical feedback of 10 Gbps quantum-dash based lasers emitting at 1.55 ?m S. Azouigui, B. Dagens, F. Lelarge, J.-G. Provost, A. Accard, F. Grillot, A. Martinez, Q. Zou, A. Ramdane, IEEE Phot. Techn. Lett. 19 (15), 1181 (2007)
• Sub-picosecond pulse generation at 134 GHz using a quantum dot based Fabry-Perot laser emitting at 1.56 ?m C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, J. Landreau, F. Lelarge, A. Ramdane, Appl. Phys. Lett. 88, (2006)
• Phase-amplitude Characterization of a high repetition rate Quantum Dash Passively Mode-Locked Laser C. Gosset, K. Merghem, G. Moreau, A. Martinez, G. Aubin, J.-L. Oudar, A. Ramdane, F. Lelarge, Opt. Lett. 31, 1848 (2006)
• Optimization and characterization of InGaAsN/GaAs quantum-well ridge diodes for high frequency operation S. Bonnefont, B. Messant, M. Boutillier, O. Gauthier-Lafaye, F. Lozes, A. Martinez, V. Sallet, K. Merghem, L. Ferlazzo, J.-C. Harmand, A. Ramdane, J.-G. Provost, B. Dagens, L. Le Gouezigou, J. Landreau, X. Marie, Opt. Quant. Electron. 38, 313 (2006)
• Sub-Picosecond Pulse Generation at 134 GHz and Low Radiofrequency Spectral Linewidth In Quantum Dash-Based Fabry-Perot Lasers Emitting at 1.5 ?m C. Gosset, K. Merghem, A. Martinez, G. Moreau, G. Patriarche, G. Aubin, J. Landreau, F. Lelarge, A. Ramdane, Electron. Lett. 42, 91 (2006)
• All-optical Wavelength Conversion by EAM With Shifted Bandpass Filter for High Bit-Rate Networks N. El Dahdah, R. Coquille, B. Charbonnier, E. Pincemin, C. Kazmierski, J. Decobert, A. Vedadi, G. Aubin, A. Ramdane, IEEE Phot. Techn. Lett. 18 n?1, 61 (2006)
• Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55?m G. Moreau, S. Azouigui, D.-Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poigt, A. Accard, F. Pommereau, Appl. Phys. Lett. 89, 241123 (2006)
• High extinction ratio and high temperature 2.5Gb/s floor free 1.3 ?m transmission with a directly modulated quantum- dot laser B. Dagens, A. Martinez, J.-G. Provost, D. Make, L. Le Gouezigou, L. Ferlazzo, A. Lemaitre, K. Merghem, A. Ramdane, B. Thedrez, IEEE Phot. Techn. Lett. 18 n?4, 589 (2006)
• Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers K. Veselinov, F. Grillot, P. Miska, E. Homeyer, P. Caroff, C. Platz, J. Even, X. Marie, O. Dehaese, S. Loualiche, A. Ramdane, Opt. Quant. Electron. 38, 369 (2006)
• Static and Dynamic Measurements of the alpha-factor of 5- Quantum-Dot-Layer Single-Mode Lasers Emitting at 1.3?m on GaAs A. Martinez, J.-G. Provost, A. Lemaitre, O. Gauthier-Lafaye, K. Merghem, L. Ferlazzo, C. Dupuis, L. Le Gouezigou, A. Ramdane, Appl. Phys. Lett. 86, 211115 (2005)
• Comparison of InAs quantum dot lasers emitting at 1.55 ?m under optical and electrical injection C. Platz, C. Paranthoen, P. Caroff, N. Bertru, C. Labbe, J. Even, O. Dehaese, H. Folliot, A. Le Corre, S. Loualiche, G. Moreau, J.-C. Simon, A. Ramdane, Semicond. Sci. Technol. 20, 459 (2005)
• New design of InGaAs/InGaAlAs MQW electro-absorption modulator for high speed all optical wavelength conversion N. El Dahdah, J. Decobert, A. Shen, S. Bouchoule, C. Kazmierski, G. Aubin, B.-E. Benkelfat, A. Ramdane, IEEE Phot. Techn. Lett. , 2302 (2004)
• High frequency performance of 3-quantum well GaInNAs/GaAs ridge waveguide lasers emitting at 1.35?m A. Martinez, V. Sallet, D. Jahan, J.-G. Provost, J. Landreau, L. Le Gouezigou, B. Dagens, L. Ferlazzo, J.-C. Harmand, A. Ramdane, IEE Proceedings-Optoelectronic , 425 (2004)
• Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates N. El Dahdah, G. Aubin, J.-C. Harmand, A. Ramdane, A. Shen, F. Devaux, A. Garreau, B.-E. Benkelfat, Appl. Phys. Lett. 84, 4268 (2004)
• 9.7 GHz small-signal bandwidth of 3-quantum well GaInAsN/GaAs laser diodes operating at 1.35 µm A. Martinez, J.-G. Provost, B. Dagens, V. Sallet, D. Jahan, K. Merghem, L. Ferlazzo, J.-C. Harmand, A. Ramdane, Electron. Lett. 40, 425 (2004)
• Relation de type Kramers-Kra?nig dans une structure a? bande interdite photonique periodique et unidimensionnelle Q. Zou, B.-E. Benkelfat, A. Ramdane, J. Phys. IV 119, 293 (2004)
• Fiber optic applications of multiple quantum well electroabsorption modulators A. Ramdane, F. Devaux, N. El Dahdah, G. Aubin, Annals of Telecommunications 58, 9 (2003)
• Extended dispersion relation in finite-length, one-dimensional, periodic photonic band-gap structures Q. Zou, A. Ramdane, B.-E. Benkelfat, Opt. Commun. 230, 167 (2003)
• High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes A. Caliman, A. Ramdane, D. Meichenin, L. Ferlazzo, B. Sermage, G. Ungaro, L. Travers, J.-C. Harmand, Electron. Lett. 38, 710 (2002)
• 1.3 µm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and Influence of the re-growth temperature on the spectral response G. Saint-Girons, A. Mereuta, J.-M. Gérard, A. Ramdane, I. Sagnes, Mater. Sci. Eng. B 78, 145 (2000)
• Quantum well bandgap engineering for 1.5 ?m telecom applications A. Ramdane, A. Ougazzaden, Mater. Sci. Eng. B 74, 66 (2000)
• Tunable distributed Bragg reflector laser-electroabsorption modulator based on identical active layer monolithic integration A. Ramdane, D. Meichenin, E. Vergnol, H. Sik, A. Ougazzaden, Electron. Lett. 35, 1637 (1999)

Publications

• Quantum Dot-based Mode-locked Lasers and Applications A. Martinez, C. Gosset, K. Merghem, G. Moreau, F. Lelarge, A. Ramdane, Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics , Chap. 20 (2008)