email:
Phone: (+33) 1 69 63 60 79
Groupe:
ELPHYSE
Actions:
AMoN
,
SemiMag
,
Nanowires
Thèmes:
PHEH
,
NGES
Contrats: RELAX, ILNACS
Laboratoire de Photonique et de Nanostructures from 1999-12-27
Publications
Publications
- Arsenic Pathways in Self-Catalyzed Growth of GaAs Nanowires
M.R. Ramdani, J.-C. Harmand, F. Glas, G. Patriarche, L. Travers, Cryst. Growth Des. 13, 91 (2013)
- Stress-driven island growth on top of nanowires
F. Glas, B. Daudin, Phys. Rev. B 86, 174112 Editor's choice (2012)
- Convergent beam electron diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures
S. Frabboni, V. Grillo, G. C. Gazzadi, R. Balboni, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini, G. Guzzinati, F. Glas, Appl. Phys. Lett. 101, 111912 (2012)
- N-Polar GaN Nanowires Seeded by Al Droplets on Si(111)
L. Largeau, E. Galopin, N. Gogneau, L. Travers, F. Glas, J.-C. Harmand, Cryst. Growth Des. 12, 2724 (2012)
- Growth mechanism and properties of InGaN insertions in GaN nanowires
G. Tourbot, C. Bougerol, F. Glas, L. F. Zagonel, Z. Mahfoud, S. Meuret, P. Gilet, M. Kociak, B. Gayral, B. Daudin, Nanotechnology 23, 135703 (2012)
- Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy
E. Galopin, L. Largeau, G. Patriarche, L. Travers, F. Glas, J.-C. Harmand, Nanotechnology 22, 245606 (2011)
- Correlation of optical and structural properties of GaN/AlN core-shell nanowires
L. Rigutti, G. Jacopin, L. Largeau, E. Galopin, A. De Luna Bugallo, F.H. Julien, J.-C. Harmand, F. Glas, M. Tchernycheva, Phys. Rev. B 83, 155320 (2011)
- Strain, composition and disorder in ADF imaging of semiconductors
V. Grillo, K. Muller, K. Volz, F. Glas, T. Grieb, A. Rosenauer, J. Phys.: Conf. Ser. 326, 12006 (2011)
- GaP/GaAs1-xPx nanowires fabricated with modulated fluxes: A step towards the realization of superlattices in a single nanowire
F. Jabeen, G. Patriarche, F. Glas, J.-C. Harmand, J. Cryst. Growth 323, 293 (2010)
- Formation and vanishing of short range ordering in GaAs1-xBix thin films
G. Ciatto, M. Thomasset, F. Glas, X. Lu, T. Tiedje, Phys. Rev. B 82, 201304 (2010)
- Chemical potentials for Au-assisted vapor-liquid-solid growth of III-V nanowires
F. Glas, J. Appl. Phys. 108, 73506 (2010)
- Growth of inclined GaAs nanowires by molecular beam epitaxy: theory and experiment
X. Zhang, V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, C. Sartel, M. Tchernycheva, J.-C. Harmand, F. Glas, Nanoscale Res. Lett. 5, 1692 (2010)
- Vapor fluxes on the apical droplet during nanowire growth by molecular beam epitaxy
F. Glas, Phys. Stat. Sol. (b) 247, 254 (2010)
- Non-random Be-to-Zn substitution in ZnBeSe alloys: Raman scattering and ab initio calculations
O. Pages, A. V. Postnikov, A. Chafi, D. Bormann, P. Simon, F. Glas, F. Firszt, W. Paszkowicz, E. Tournie, Eur. Phys. J. B 73, 461 (2010)
- Nucleation antibunching in catalyst-assisted nanowire growth
F. Glas, J.-C. Harmand, G. Patriarche, Phys. Rev. Lett. 104, 135501 (2010)
- Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors
F. Glas, G. Patriarche, J.-C. Harmand, J. Phys.: Conf. Ser. 209, 12002 (2010)
- Growth kinetics of a single InP1-xAsx nanowire
J.-C. Harmand, F. Glas, G. Patriarche, Phys. Rev. B 81, 235436 (2010)
- Local structure of indium in quinary (InGa)(AsSbN)/GaAs quantum wells
J. Chen, J. Chen, G. Ciatto, M. Le Du, J.-C. Harmand, F. Glas, Phys. Rev. B 82, 125303 (2010)
- Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Rossler, F. Peiro, J. R. Morante, G. Abstreiter, L. Samuelson, A. Fontcuberta i Morral, Phys. Rev. B 80, 245325 (2009)
- Role of nonlinear effects in nanowire growth and crystal phase
V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, A. D. Bouravleuv, Yu. B. Samsonenko, D.L. Dheeraj, H.L. Zhou, C. Sartel, J.-C. Harmand, G. Patriarche, F. Glas, Phys. Rev. B 80, 205305 (2009)
- Macrospin behavior and superparamagnetism in (Ga,Mn)As nanodots
J.-P. Adam, S. Rohart, J. Ferre, A. Mougin, N. Vernier, L. Thevenard, A. Lemaitre, G. Faini, F. Glas, Phys. Rev. B 80, 155313 (2009)
- Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates
G. E. Cirlin, V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, Yu. B. Samsonenko, A. D. Bouravleuv, J.-C. Harmand, F. Glas, Phys. Stat. Sol. RRL 3, 112 (2009)
- Growth kinetics and crystal structure of semiconductor nanowires
V. G. Dubrovskii, N. V. Sibirev, J.-C. Harmand, F. Glas, Phys. Rev. B 78, 235301 (2008)
- Influence of the static atomic displacement on atomic resolution Z-contrast imaging
V. Grillo, E. Carlino, F. Glas, Phys. Rev. B 77, 54103 (2008)
- Zinc blende GaAsSb nanowires grown by molecular beam epitaxy
D.L. Dheeraj, G. Patriarche, L. Largeau, H.L. Zhou, A.T.J. van Helvoort, F. Glas, J.-C. Harmand, B. O. Fimland, H. Weman, Nanotechnology 19, 275605 (2008)
- Nanocolonnes semi-conductrices
J.-C. Harmand, F. Glas, G. Patriarche, M. Tchernycheva, Images de la Physique 2007, 57 (2008)
- Wurtzite to zinc-blende phase transition in GaAs nanowires induced by epitaxial burying
G. Patriarche, F. Glas, M. Tchernycheva, C. Sartel, L. Largeau, J.-C. Harmand, G. E. Cirlin, Nano Lett. 8, 1638 (2008)
- STM Images of Subsurface Mn Atoms in GaAs: Evidence of Hybridization of Surface and Impurity States
J.-M. Jancu, J.-C. Girard, A. Lemaitre, F. Glas, Z.-Z. Wang, P. Voisin, Phys. Rev. Lett. 101, 196801 (2008)
- Modulated contrast and associated diffracted intensity of GaPySb1-y layers grown using organometallic vapor phase epitaxy
T.-Y. Seong, G. R. Booker, A. G. Norman, F. Glas, G. B. Stringfellow, JKPS 52, 471 (2008)
- Spatial correlation between Bi atoms in dilute GaAs1-xBix: from random distribution to Bi pairing and clustering
G. Ciatto, E. C. Young, F. Glas, J. Chen, R. Alonso Mori, T. Tiedje, Phys. Rev. B 78, 35325 (2008)
- A simple calculation of energy changes upon stacking fault formation or local crystalline phase transition in semiconductors
F. Glas, J. Appl. Phys. 104, 93520 (2008)
- Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
M. Tchernycheva, L. Travers, G. Patriarche, F. Glas, J.-C. Harmand, G. E. Cirlin, V. G. Dubrovskii, J. Appl. Phys. 102, 94313 (2007)
- Why does wurtzite form in nanowires of III-V zinc-blende semiconductors
F. Glas, J.-C. Harmand, G. Patriarche, Phys. Rev. Lett. 99, 146101 (2007)
- Anions relative location in the group-V sublattice of GaAsSbN/GaAs epilayers: XAFS measurements and simulations
G. Ciatto, J.-C. Harmand, F. Glas, L. Largeau, M. Le Du, F. Boscherini, M. Malvestuto, L. Floreano, P. Glatzel, R. Alonso Mori, Phys. Rev. B 75, 245212 (2007)
- Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires
F. Glas, Phys. Rev. B 74, 121302 (2006)
- Clustering in GaAsSbN alloys as a possible origin of their atypical optical behavior: a Sb K-edge X-ray absorption study
G. Ciatto, J.-C. Harmand, L. Largeau, F. Glas, Phys. Stat. Sol. (c) 3, 1931 (2006)
- Calculation of the temperature profile in nanowhiskers growing on a hot substrate
F. Glas, J.-C. Harmand, Phys. Rev. B 73, 155320 (2006)
- Stress-engineered orderings of self-assembled III-V semiconductor nanostructures J. Coelho, G. Patriarche, F. Glas, G. Saint-Girons, I. Sagnes, Phys. Stat. Sol. (c) 2, 1245 (2005)
- Dislocation networks adapted to order the growth of III-Vsemiconductor nanostructures J. Coelho, G. Patriarche, F. Glas, I. Sagnes, G. Saint-Girons, Phys. Stat. Sol. (c) 2, 1933 (2005)
- First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs A. Rosenauer, M. Schowalter, F. Glas, D. Lamoen, Phys. Rev. B 72, 85326 (2005)
- Analysis of vapor-liquid-solid mechanism for Au-assisted GaAs nanowire growth J.-C. Harmand, G. Patriarche, N. Pere-Laperne, M.-N. Merat-Combes, L. Travers, F. Glas, Appl. Phys. Lett. 87, 203101 (2005)
- Buried dislocation networks for the controlled growth of III-V semiconductor nanostructures F. Glas, J. Coelho, G. Patriarche, G. Saint-Girons, J. Cryst. Growth 275, e1647 (2005)
- The effect of the static atomic displacements on the structure factors of weak reflections in cubic semiconductor alloys F. Glas, Philos. Mag. 84, 2055 (2004)
- Absolute determination of the asymmetry of the in-plane deformation of GaAs(011) L. Largeau, G. Patriarche, F. Glas, E. Le Bourhis, J. Appl. Phys. 95, 3984 (2004)
- Composition profiling of InAs/GaAs quantum dots A. Lemaitre, G. Patriarche, F. Glas, Appl. Phys. Lett. 85, 3717 (2004)
- Determination of the local concentrations of Mn intertitials and antisite defects in GaMnAs F. Glas, G. Patriarche, L. Largeau, A. Lemaitre, Phys. Rev. Lett. 93, 86107 (2004)
- Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures J. Coelho, G. Patriarche, F. Glas, G. Saint-Girons, I. Sagnes, L. Largeau, Phys. Rev. B 70, 155329 (2004)
- Long range ordering of III-V semiconductor nanostructures by shallowly buried dislocations networks J. Coelho, G. Patriarche, F. Glas, G. Saint-Girons, I. Sagnes, J. Phys.: Condens. Matter 16, 7941 (2004)
- Elastic relaxation of a truncated circular cylinder with uniform dilatational eigenstrain in a half space F. Glas, Phys. Stat. Sol. (b) 237, 599 (2003)
- Analytical calculation of the strain field of single and periodic misfitting polygonal wires in a half space F. Glas, Philos. Mag. A 82, 2591 (2002)
- Elastic relaxation of isolated and interacting truncated pyramidal quantum dots and quantum wires in a half space F. Glas, Appl. Surf. Sci. 188, 9 (2002)
- Normal-incidence (001) second-harmonic generation in ordered GaInP S. Sauvage, Y. Bernard, I. Sagnes, G. Patriarche, F. Glas, G. Le Roux, M. Bensoussan, J. A. Levenson, J. Opt. Soc. Am. B 18, 81 (2001)
- Elastic relaxation of truncated pyramidal quantum dots and quantum wires in a half space: An analytical calculation F. Glas, J. Appl. Phys. 90, 3232 (2001)
- Thermodynamic and kinetic instabilities of lattice-matched semiconductor alloy layers: Compositional and morphological perturbations F. Glas, Phys. Rev. B 62, 7393 (2000)
- Step-bunching instability in strained-layer supperlattices grown on vicinal substrates G. Patriarche, A. Ougazzaden, F. Glas, Appl. Phys. Lett. 76, 306 (2000)
- GaAs/GaAs twist-bonding for compliant substrates: interface structure and epitaxial growth G. Patriarche, C. Meriadec, G. Le Roux, C. Deparis, I. Sagnes, J.-C. Harmand, F. Glas, Appl. Surf. Sci. 164, 15 (2000)
- TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures G. Patriarche, F. Glas, G. Le Roux, L. Largeau, A. Mereuta, A. Ougazzaden, J. L. Benchimol, J. Cryst. Growth 221, 12 (2000)
Publications
- Heterostructures and strain relaxation in semiconductor nanowires
F. Glas, Lattice engineering: Technologies and applications, éd. par S. M. Wang (Pan Stanford Publishing, Singapore, 2012) 5, 189 (2012)
- Growth of III-arsenide/phosphide nanowires by molecular beam epitaxy
J.-C. Harmand, F. Glas, G. Patriarche, M. Tchernycheva, C. Sartel, L. Liu, F. Jabeen, Advances in III-V semiconductor nanowires and nanodevices (ed. J. Li, D. Wang et R. R. LaPierre) , 68 (2011)
- Elastic strain relaxation: thermodynamics and kinetics
[PDF]
F. Glas, Mechanical stress on the nanoscale - simulation, material systems and characterization techniques (ed. M. Hanbücken, P. Müller, R. B. Wehrspohn) , 3 (2011)
- Introduction to the thermodynamics of stressed systems
F. Glas, Contraintes mecaniques en micro, nano et optoelectronique (ed. par M. Mouis) , 77 (2006)
- Elastic stress relaxation
F. Glas, Contraintes mecaniques en micro, nano et optoelectronique (ed. par M. Mouis) , 203 (2006)
