
email:
Phone: (+33) 1 69 63 60 70
Groupe:
TECHNO
Actions:
GravSec
,
GuiWac
,
SLMetro
,
SLTrans
,
PhotoMet
,
COMS
Thèmes:
CMEP
Contrats: GRAFIC
Laboratoire de Photonique et de Nanostructures from 1993-01-12
Publications
Publications
- A cost-effective thermally-managed 1.55 µm VECSEL with hybrid mirror on copper substrate
Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, J.-L. Oudar, IEEE J. Quant. Electron. 48, 643 (2012)
- Total funneling of light in high aspect ratio plasmonic nanoresonators
P. Bouchon, F. Pardo, B. Portier, L. Ferlazzo, P. Ghenuche, G. Dagher, C. Dupuis, N. Bardou, R. Haïdar, J.-L. Pelouard, Appl. Phys. Lett. 98, 191109 (2011)
- Surface-emitting mid-infrared quantum cascade lasers with high-contrast photonic crystal resonators
G. Y. Xu, R. Colombelli, R. Braive, G. Beaudoin, L. Le Gratiet, A. Talneau, L. Ferlazzo, I. Sagnes, Optics Express 18, 11979 (2010)
- Towards a monolithic optical cavity for atom detection and manipulation
S. Gleyzes, A. El Amili, R.A. Cornelussen, P. Lalanne, C.I. Westbrook, A. Aspect, J. Esteve, G. Moreau, A. Martinez, X. Lafosse, L. Ferlazzo, J.-C. Harmand, D. Mailly, A. Ramdane, Eur. Phys. J. D 53, 107 (2009)
- Towards a monolithic optical cavity for atom detection and manipulation
S. Gleyzes, A. El Amili, R.A. Cornelussen, P. Lalanne, C.I. Westbrook, A. Aspect, J. Esteve, G. Moreau, A. Martinez, X. Lafosse, L. Ferlazzo, J.-C. Harmand, D. Mailly, A. Ramdane, Eur. Phys. J. D 53, 107 (2009)
- Exciton/plasmon polaritons in GaAs/Al0.93Ga0.07As heterostructures near a metallic layer
J. Bellessa, C. Symonds, C. Meynaud, J. C. Plenet, E. Cambril, A. Miard, L. Ferlazzo, A. Lemaitre, Phys. Rev. B 78, 205326 (2008)
- Optimization and characterization of InGaAsN/GaAs quantum-well ridge diodes for high frequency operation
S. Bonnefont, B. Messant, M. Boutillier, O. Gauthier-Lafaye, F. Lozes, A. Martinez, V. Sallet, K. Merghem, L. Ferlazzo, J.-C. Harmand, A. Ramdane, J.-G. Provost, B. Dagens, L. Le Gouezigou, J. Landreau, X. Marie, Opt. Quant. Electron. 38, 313 (2006)
- High extinction ratio and high temperature 2.5Gb/s floor free 1.3 ?m transmission with a directly modulated quantum- dot laser B. Dagens, A. Martinez, J.-G. Provost, D. Make, L. Le Gouezigou, L. Ferlazzo, A. Lemaitre, K. Merghem, A. Ramdane, B. Thedrez, IEEE Phot. Techn. Lett. 18 n?4, 589 (2006)
- Reactive-ion etching of high-Q and submicron-diameter GaAs/AlAs micropillars
S. Varoutsis, S. Laurent, I. Sagnes, A. Lemaitre, L. Ferlazzo, C. Meriadec, G. Patriarche, I. Robert-Philip, I. Abram, J. Vac. Sci. Technol. B 23, 2499 (2005)
- Purcell effects for CdSe/ZnSe quantum dots placed into hybrid micropilllars
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I. C. Robin, R. Andre, A. Balocchi, S. Carayon, S. Moehl, J.-M. Gérard, L. Ferlazzo, Appl. Phys. Lett. 87, 233114 (2005)
- Static and Dynamic Measurements of the alpha-factor of 5- Quantum-Dot-Layer Single-Mode Lasers Emitting at 1.3?m on GaAs A. Martinez, J.-G. Provost, A. Lemaitre, O. Gauthier-Lafaye, K. Merghem, L. Ferlazzo, C. Dupuis, L. Le Gouezigou, A. Ramdane, Appl. Phys. Lett. 86, 211115 (2005)
- High frequency performance of 3-quantum well GaInNAs/GaAs ridge waveguide lasers emitting at 1.35?m A. Martinez, V. Sallet, D. Jahan, J.-G. Provost, J. Landreau, L. Le Gouezigou, B. Dagens, L. Ferlazzo, J.-C. Harmand, A. Ramdane, IEE Proceedings-Optoelectronic , 425 (2004)
- 9.7 GHz small-signal bandwidth of 3-quantum well GaInAsN/GaAs laser diodes operating at 1.35 µm A. Martinez, J.-G. Provost, B. Dagens, V. Sallet, D. Jahan, K. Merghem, L. Ferlazzo, J.-C. Harmand, A. Ramdane, Electron. Lett. 40, 425 (2004)
- Equifrequency surfaces in GaN /sapphire photonic crystal D. Peyrade, J. M. Torres, D. Coquillat, R. Legros, J. P. Lascaray, Y. Chen, L. Ferlazzo, S. Ruffenach, O. Briot, J.P. Aulombard, M. Le Vassor D'Yerville, E. Centeno, D. Cassagne, J.P. Albert, Physica E 17, 420 (2003)
- Experimental dispersion of the radiative Bloch modes of GaAs photonic crystals consisting of pillars in a graphite arrangement D. Coquillat, D. Peyrade, Y. Chen, R. Legros, J. M. Torres, J. M. Torres, R.M. De La Rue, L. Ferlazzo, J. P. Lascaray, S. Ruffenach, O. Briot, J.P. Aulombard, M. Le Vassor D'Yerville, E. Centeno, D. Cassagne, J.P. Albert, Physica E 17, 423 (2003)
- Equifrequency surfaces in GaN/sapphire photonic crystals D. Peyrade, J. Torres, D. Coquillat, R. Legros, J. P. Lascaray, Y. Chen, L. Ferlazzo, S. Ruffenach, Physica E 17, 423 (2003)
- Deep in situ dry-etch monitoring of III-V multilayer structures using laser reflectometry and reflectivity modelling H. Moussa, R. Daneau, C. Meriadec, L. Ferlazzo, I. Sagnes, R. Raj, J. Vac. Sci. Technol. A 20, 748 (2002)
- High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes A. Caliman, A. Ramdane, D. Meichenin, L. Ferlazzo, B. Sermage, G. Ungaro, L. Travers, J.-C. Harmand, Electron. Lett. 38, 710 (2002)
- Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching F. Demangeot, J. Gleize, J. Frandon, M. A. Renucci, M. Kuball, D. Peyrade, L. Ferlazzo, Y. Chen, N. Grandjean, J. Appl. Phys. 91, 6520 (2002)
- Single-mode solid-state single photon source based on isolated QDs in pillar microcavities
E. Moreau, I. Robert-Philip, J.-M. Gérard, I. Abram, L. Ferlazzo, V. Thierry-Mieg, Appl. Phys. Lett. 79, 2865 (2001)
- Quantum cascade of photons in semiconductor quantum dots
E. Moreau, I. Robert-Philip, L. Ferlazzo, V. Thierry-Mieg, J.-M. Gérard, I. Abram, Phys. Rev. Lett. 87, 183601 (2001)
- Electron beam lithography: resolution limits and applications C. Vieu, F. Carcenac, A. Pepin, Y. Chen, M. Mejias, A. Lebib, L. Ferlazzo, L. Couraud, H. Launois, Appl. Surf. Sci. 164, 111 (2000)
- High-Q wet-etched GaAs microdisks containing InAs quantum boxes B. Gayral, J.-M. Gérard, A. Lemaitre, C. Dupuis, L. Ferlazzo, J.-L. Pelouard, Appl. Phys. Lett. 75, 1908 (1999)
- Optical losses in plasma-etched AlGaAs microresonators using reflection spectroscopy T. Rivera, J. P. Debray, J.-M. Gérard, B. Legrand, L. Ferlazzo, J.-L. Oudar, Appl. Phys. Lett. 74, 911 (1999)
- Damage characterization of anisotropic InP patterns obtained by SiCl4 reactive ion etching L. Ferlazzo, F. Carcenac, R. Teissier, G. Faini, D. Mailly, Microelectron. Eng. 46, 331 (1999)