The goal of this research area is to develop novel devices with performance significantly superior than the state of the art, as well as new functionalities in electronics and optoelectronics (e.g., ultra high frequency transistors, optical memories, low threshold lasers, broad band high bit rate optical regenerators, wavelength commutators and converters, optical-to-millimeter wave converters, optical circuits). Among the devices already explored in this direction, the new structures for HBT and photodetectors, the vertical cavity structures or the optical band gap structures constitute new classes of devices likely to take up the current challenges of optoelectronics in term of cost and performance. Significant issues in this set of activities are the realization of optical functions and lasers based on vertical cavity structures (fast VCSELs and ultrafast regenerating optical gates), of superlattice photo-oscillators, optoelectronic devices for the 1.3-1.5 µm wavelength range (quantum dot laser-modulators, photonic circuits based on optical band gap materials), of high frequency transistors (HBT, HEMT). In the perspective of the integration of III-V optoelectronics and silicon micro-electronics, we work on the development of III-V structures on Ge/Si pseudo-substrates and on the realization of test devices for their validation.
Last update :